Anomalous L-Subshell Internal Conversion of Some Hindered El Transitions in 171Tm, 175Lu and 177Hf

1973 ◽  
Vol 28 (12) ◽  
pp. 1959-1964 ◽  
Author(s):  
M. S. El-Nesr ◽  
E. Bashandy

The L-subshell internal conversion electron ratios of some hindered electric dipole transitions in the odd-mass nuclei 171Tm, 175Lu and 177 Hf have been measured by means of a high resolution ironfree double focusing beta-ray spectrometer. Large anomalies have been observed in the conversion process. The anomalies are interpreted as an experimental evidence for the presence of dynamic effects. The internal conversion penetration parameters have been determined. The results obtained are discussed in terms of theoretical predictions.

2002 ◽  
Vol 65 (2) ◽  
Author(s):  
M. Shibata,1 ◽  
H. Iimura ◽  
M. Asai ◽  
A. Osa ◽  
K. Kawade ◽  
...  

1967 ◽  
Vol 159 (4) ◽  
pp. 955-968 ◽  
Author(s):  
Hans J. Hennecke ◽  
J. C. Manthuruthil ◽  
O. Bergman ◽  
C. R. Cothern

2011 ◽  
Vol 1341 ◽  
Author(s):  
Abigail A. Bickley ◽  
Christopher Young ◽  
Benjamin Thomas ◽  
John W. McClory ◽  
Peter A. Dowben ◽  
...  

ABSTRACTSolid-state neutron detectors from heterostructures that incorporate Gd intrinsically or as a dopant may significantly benefit from the high thermal neutron capture cross section of gadolinium. Semiconducting devices with Gd atoms can act as a neutron capture medium and simultaneously detect the electronic signal that characterizes the interaction. Neutron capture in natural isotopic abundance gadolinium predominantly occurs via the formation of 158mGd, which decays to the ground state through the emission of high-energy gamma rays and an internal conversion electron. Detection of the internal conversion electron and/or the subsequent Auger electron emission provides a distinct and identifiable signature that neutron capture has occurred. Ensuring that the medium responds to these emissions is imperative to maximizing the efficiency and separating out other interactions from the radiation environment. A GEANT4 model, which includes incorporation of the nuclear structure of Gd, has been constructed to simulate the expected device behavior. This model allows the energy deposited from the decay of the meta-stable state to be localized and transported, providing for analysis of various device parameters. Device fabrication has been completed for Gd doped HfO2 on n-type silicon, Gd2O3 on p-type silicon and Gd2O3 on SiC for validation of the code. A preliminary evaluation of neutron detection capabilities of these devices using a GEANT4 modeling approach is presented.


1990 ◽  
Vol 42 (1) ◽  
pp. 643-647 ◽  
Author(s):  
L. Kövér ◽  
I. Cserny ◽  
V. Brabec ◽  
M. Fier ◽  
O. Dragoun ◽  
...  

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