scholarly journals Electric Field Gradients at the In Site in Au-In Compounds

1998 ◽  
Vol 53 (6-7) ◽  
pp. 349-354 ◽  
Author(s):  
P. Wodniecki ◽  
A. Kulińska ◽  
B. Wodniecka ◽  
A. Z. Hrynkiewicz
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Angular Correlation ◽  
Perturbed Angular Correlation ◽  
High Temperature Phase ◽  
Correlation Technique ◽  
Temperature Phase ◽  
Electric Field Gradients ◽  
Field Gradients ◽  
Temperature Dependences

Abstract The quadrupole interaction in Au-In compounds of different stoichiometrics was studied with the perturbed angular correlation technique. The electric field gradients at 111Cd probes were measured and the temperature dependences of the quadrupole frequencies were determined. A new high temperature phase of Auln above 630 K and a new metastable modification of Au7In3 were found.

scholarly journals Perturbed angular correlation investigation of the electric field gradient at 181Ta probe in the Hf2Ni7 compound

2012 ◽  
Vol 27 (2) ◽  
pp. 95-102
Author(s):  
Bozidar Cekic ◽  
Ana Umicevic ◽  
Valentin Ivanovski ◽  
Rongwei Hu ◽  
Cedomir Petrovic ◽  
...  
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Angular Correlation ◽  
Quadrupole Interaction ◽  
Magnetic Order ◽  
Perturbed Angular Correlation ◽  
X Ray Diffraction ◽  
Electric Field Gradients ◽  
X Ray ◽  
Field Gradients

The perturbed angular correlation method was employed to study the temperature dependence of electric field gradients at the 181Ta probe in the polycrystalline Hf2Ni7 compound. The temperature evolution of the sample content was measured using high-temperature X-ray diffraction. To check the magnetic order of the sample, magnetization measurements and additional perturbed angular correlation measurements with externally applied magnetic field were performed. All obtained spectra showed no evidence of magnetic order of the Hf2Ni7 phase. Within the experimental resolution of the apparatus, the measured electric field gradients at 181Ta probe for the two inequivalent 181Hf/181Ta sites in the Hf2Ni7 compound appeared as one in the range of 78-944 K. A single quadrupole interaction implies that the electric field gradients at the two Hf sites must be quite similar. At 293 K, the measured quadrupole interaction parameters are ?Q = 433(1) MHz and ? = 0.300(4). An increase of the quadrupole frequency and a gradual rising of the asymmetry parameter were observed with increasing temperature. The high-temperature X-ray diffraction indicated a build up of HfO2 above 693 K.

Impurity Cationic-Site Population and Electric-Field Gradient Dependence on Ionic Size in Bixbyites Sesquioxides Implanted With 181Hf → 181Ta

1998 ◽  
Vol 12 (20) ◽  
pp. 819-827 ◽  
Author(s):  
M. Rentería ◽  
A. G. Bibiloni ◽  
F. G. Requejo ◽  
A. F. Pasquevich ◽  
J. Shitu ◽  
...  
Keyword(s):  
Electric Field ◽  
Perturbed Angular Correlation ◽  
Lattice Parameter ◽  
Correlation Technique ◽  
Electric Field Gradients ◽  
Field Gradients ◽  
Cationic Site ◽  
Small Lattice ◽  
Ionic Size ◽  
Site Population

The Perturbed-Angular-Correlation technique was used to study the impurity cationic-site population and electric-field gradients in scandium and samarium sesquioxides implanted with 181 Hf → 181 Ta . We found a departure of the tantalum (hafnium) relative occupancy of the crystallographic sites C and D in the bixbyite structure from the natural abundance of the sites, in the case of scandium sesquioxide, that could be explained in terms of the small lattice parameter of this sesquioxide. A similar behavior occurs in the case of indium sesquioxide. In the rest of the bixbyites measured with 181 Ta , f D /f C remains nearly constant and close to the crystallographic abundance, which is only reached in the case of Sm 2 O 3, the sesquioxide with the largest lattice parameter. Additionally, we confirm a jump in the values of νQ( Ta ) for sites C and D that takes place for a ≤ 1:012 nm, that is for lattice parameters smaller than that of ytterbium sesquioxide.

Formation of In-Cu Pairs in Silicon During Chemomechanical Polishing

1989 ◽  
Vol 163 ◽  
Author(s):  
Th. Wichert ◽  
R. Keller ◽  
M. Deicher ◽  
W. Pfeiffer ◽  
H. Skudlik ◽  
...  
Keyword(s):  
Electric Field ◽  
Angular Correlation ◽  
Correlation Technique ◽  
Electric Field Gradients ◽  
Field Gradients ◽  
Acceptor Atom

AbstractUsing the perturbed γγ angular correlation technique (PAC) the pairing of Cu with the radioactive acceptor atom 111In in Si is detected. Because of the identity of the electric field gradients the so-called X defect, observed after chemomechanical polishing of Si wafers and known of neutralizing acceptor atoms in Si, is identified as a Cu atom. It is also shown that as-delivered Si wafers already contain Cu atoms which neutralize acceptor atoms if the wafers are annealed at 1173 K.

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