Elektronenmikroskopische Untersuchung in Hochauflösung an CaTa2O6 und CaTa4O11 — Vergleich mit der rechnerischen Simulation / High Resolution Electron Microscopy Investigation of CaTa2O6 and CaTa4O11 - A Comparison with Calculated Images

1985 ◽  
Vol 40 (12) ◽  
pp. 1651-1657 ◽  
Author(s):  
B. Langenbach-Kuttert ◽  
W. Mertin ◽  
R. Gruehn
Keyword(s):  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Computation Method ◽  
Crystal Thickness ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Resolution Electron ◽  
Electron Microscopy Investigation ◽  
Temperature Electron ◽  
Simulated Images

Abstract The phases CaTa2O6 and CaTa4O11 were prepared at high temperature; electron micrographs of their well known structures were taken by high resolution transmission electron m icroscopy. A comparison with simulated images using different values of crystal thickness and defocus shows the validity of the described computation method

High Resolution Transmission Electron Microscopy Investigation of the Defect Structure in CdMnTe Layers Grown on GaAs by MOCVD

1987 ◽  
Vol 102 ◽  
Author(s):  
J. H. Mazur ◽  
P. Grodzinski ◽  
A. Nouhi ◽  
R. J. Stirn
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Organic Chemical ◽  
Orientation Relationships ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Resolution Electron

ABSTRACTElectron diffraction and high resolution electron microscopy were used for analysis of Cd1−xMnxTe films grown on (100)2°[011] GaAs substrates by metal organic chemical vapor deposition (MOCVD) at 420°C (x=O.3) and 450°C (x=0.5). It has been found that these two conditions produce dramatically different microstructures. Two orientation relationships of the epilayers with respect to the substrate were observed. It is suggested that this phenomenon may be related to GaAs substrate surface morphology.

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