Grain Growth in Nanocrystalline Metal Thin Films under In Situ Ion-Beam Irradiation

2007 ◽  
Vol 4 (8) ◽  
pp. 100743 ◽  
Author(s):  
D. Kaoumi ◽  
A. T. Motta ◽  
R. C. Birtcher ◽  
R. Lott ◽  
S. W. Dean
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Nanocrystalline Metal ◽  
Metal Thin Films

Investigation of the Mechanism of Conductivity of NbN Thin Films, Modified Under Composite Ion Beam Irradiation

2016 ◽  
Vol 7 (3) ◽  
pp. 172-179 ◽  
Author(s):  
B. A. Gurovich ◽  
K. E. Prikhodko ◽  
M. A. Tarkhov ◽  
A. G. Domantovsky ◽  
D. A. Komarov ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

Effect of 200 MeV Ag15+ ion beam irradiation at different fluences on WO3 thin films

2019 ◽  
Vol 439 ◽  
pp. 51-58 ◽  
Author(s):  
R. Rathika ◽  
M. Kovendhan ◽  
D. Paul Joseph ◽  
A. Sendil Kumar ◽  
K. Vijayarangamuthu ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Wo3 Thin Films

In-situ luminescence measurement of lithium aluminate under ion beam irradiation

1992 ◽  
Vol 191-194 ◽  
pp. 268-271 ◽  
Author(s):  
Yoshiyuki Asaoka ◽  
Hirotake Moriyama ◽  
Kimihiko Iwasaki ◽  
Kimikazu Moritani ◽  
Yasuhiko Ito
Keyword(s):  
Ion Beam ◽  
Lithium Aluminate ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Luminescence Measurement

scholarly journals Tailoring the properties of spray deposited V2O5 thin films using swift heavy ion beam irradiation

2020 ◽  
Vol 52 (11) ◽  
pp. 2585-2593 ◽  
Author(s):  
R. Rathika ◽  
M. Kovendhan ◽  
D. Paul Joseph ◽  
Rekha Pachaiappan ◽  
A. Sendil Kumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Heavy Ion ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Swift Heavy Ion ◽  
Heavy Ion Beam ◽  
V2o5 Thin Films

Correlation between surface phonon mode and luminescence in nanocrystalline CdS thin films: An effect of ion beam irradiation

2014 ◽  
Vol 116 (4) ◽  
pp. 043517 ◽  
Author(s):  
Pragati Kumar ◽  
Nupur Saxena ◽  
Vinay Gupta ◽  
Fouran Singh ◽  
Avinash Agarwal
Keyword(s):  
Thin Films ◽  
Phonon Mode ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Surface Phonon ◽  
Cds Thin Films ◽  
Surface Phonon Mode

In-situ observation of structural changes in aluminum during He+ and H2+ dual-ion beam irradiation

1992 ◽  
Vol 191-194 ◽  
pp. 1219-1223 ◽  
Author(s):  
S. Furuno ◽  
K. Hojou ◽  
K. Izui ◽  
N. Kamigaki ◽  
K. Ono ◽  
...  
Keyword(s):  
Structural Changes ◽  
Ion Beam ◽  
In Situ Observation ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

Amortization And Dynamic Recovery Of A2BO4 Structure Types During 1.5 MeV Krypton Ion-Beam Irradiation

1993 ◽  
Vol 321 ◽  
Author(s):  
L. M. Wang ◽  
W. L. Gong ◽  
R. C. Ewing
Keyword(s):  
Dynamic Recovery ◽  
Ion Beam ◽  
Recovery Process ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Materials Properties ◽  
Recovery Processes ◽  
Rate Of Increase ◽  
A Site

ABSTRACTThe temperature dependence of the critical amorphization dose, Dc, of four A2BO4 compositions, forsterite (Mg2SiO4), fayalite (Fe2SiO4), synthetic Mg2GeO4, and phenakite (Be2SiO4) was investigated by in situ TEM during 1.5 MeV Kr+ion beam irradiation at temperatures between 15 to 700 K. For the Mg- and Fe-compositions, the A-site is in octahedral coordination, and the structure is a derivative hep (Pbnm); for the Be-composition, the A- and B-sites are in tetrahedral coordination, forming corner-sharing hexagonal rings (R3). Although the Dc's were quite close at 15 K for all the four compositions (0.2–0.5 dpa), Dc increased with increasing irradiation temperature at different rates. The Dc-temperature curve is the result of competition between amorphization and dynamic recovery processes. The Dc rate of increase (highest to lowest) is: Be2SiO4, Mg2SiO4, Mg2GeO4, Fe2SiO4. At room temperature, Be2SiO4 amorphized at 1.55 dpa; Fe2SiO4, at only 0.22 dpa. Based on the Dc-temperature curves, the activation energy, Ea, of the dynamic recovery process and the critical temperature, Tc, above which complete amorphization does not occur are: 0.029, 0.047, 0.055 and 0.079 eV and 390, 550, 650 and 995 K for Be2SiO4, Mg2SiO4, Mg2GeO4 and Fe2SiO4, respectively. These results are explained in terms of the materials properties (e.g., bonding and thermodynamic stability) and cascade size which is a function of the density of the phases. Finally, we note the importance of increased amorphization cross-section, as a function of temperature (e.g., the low rate of increase of Dc with temperature for Fe2SiO4).

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