Zirconium-Applied Anisotropic Cluster Dynamics for Irradiation-Induced Defect Modeling in Presence of Hydrogen

2021 ◽  
pp. 643-668
Author(s):  
Daniel Brimbal ◽  
Nermine Chaari ◽  
Pierre Barberis ◽  
Florent Bourlier
Keyword(s):  
Defect Modeling

Defect Modeling Using Fault Tuples

2006 ◽  
Vol 25 (11) ◽  
pp. 2450-2464 ◽  
Author(s):  
R.D. Blanton ◽  
K.N. Dwarakanath ◽  
R. Desineni
Keyword(s):  
Defect Modeling

Defect Modeling and Simulation of 4-H SiC P-N Diode

2000 ◽  
Vol 338-342 ◽  
pp. 1351-1354 ◽  
Author(s):  
N. Keskar ◽  
K. Shenai ◽  
Philip G. Neudeck
Keyword(s):  
Modeling And Simulation ◽  
Defect Modeling

Measurement and defect modeling for a legacy software system

1995 ◽  
Vol 1 (1) ◽  
pp. 95-118 ◽  
Author(s):  
Joel Troster ◽  
Jeff Tian
Keyword(s):  
Software System ◽  
Defect Modeling ◽  
Legacy Software

The Application of Novel Failure Analysis Techniques and Defect Modeling in Eliminating Short Poly End-Cap Problem in Submicron CMOS Devices

1996 ◽  
Author(s):  
Y.E. Hong ◽  
M.T.T. We
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Leakage Current ◽  
Packing Density ◽  
Process Change ◽  
Defect Modeling ◽  
Functional Failure ◽  
Analysis Techniques ◽  
Post Process ◽  
First Time

Abstract As transistor dimension shrinks down below submicron to cater for higher speed and higher packing density, it is very important to characterize the shrinkage carefully to avoid unwanted parametric problems. Leakage current across short poly end-cap is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre wafer striping' functional failure problem. This paper presents the advanced failure analysis techniques and defect modeling used to narrow down and identify this new mechanism. Post process change by loosening the marginal poly end-cap criteria eliminated the problem completely.

scholarly journals TSV-Defect Modeling, Detection and Diagnosis Based on 3-D Full Wave Simulation and Parametric Measurement

IEEE Access ◽  
2018 ◽  
Vol 6 ◽  
pp. 72415-72426 ◽  
Author(s):  
Xu Fang ◽  
Yang Yu ◽  
Kangkang Xu ◽  
Xiyuan Peng
Keyword(s):  
Defect Modeling ◽  
Wave Simulation ◽  
Full Wave ◽  
Detection And Diagnosis
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