Ex Situ and In Situ Studies of Radiation Damage Mechanisms in Zr-Nb Alloys

Author(s):  
Junliang Liu ◽  
Guanze He ◽  
Anne Callow ◽  
Kexue Li ◽  
Sergio Lozano-Perez ◽  
...  
Metals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1034
Author(s):  
Bettina Camin ◽  
Lennart Hansen

In transportation light metal matrix composites (L-MMCs) are used increasingly due to their improved creep resistance even at higher application temperatures. Therefore, the creep behavior and failure mechanisms of creep loaded particle reinforced L-MMCs have been investigated intensively. Until now, creep damage analyses are usually performed ex situ by means of interrupted creep experiments. However, ex situ methods do not provide sufficient information about the evolution of creep damage. Hence, in situ synchrotron X-ray 3D-µ-tomography investigations were carried out enabling time and space resolved studies of the damage mechanisms in particle-reinforced titanium- and aluminum-based metal matrix composites (MMCs) during creep. The 3D-data were visualized and existing models were applied, specifying the phenomenology of the damage in the early and late creep stages. During the early stages of creep, the damage is determined by surface diffusion in the matrix or reinforcement fracture, both evolving proportionally to the macroscopic creep curve. In the late creep stages the damage mechanisms are quite different: In the Al-MMC, the identified mechanisms persist proportional to creep strain. In contrast, in the titanium-MMC, a changeover to the mechanism of dislocation creep evolving super-proportionally to creep strain occurs.


ChemInform ◽  
2010 ◽  
Vol 27 (13) ◽  
pp. no-no
Author(s):  
N. S. MCINTYRE ◽  
P. A. SPEVACK ◽  
M. J. WALZAK

1995 ◽  
Vol 02 (05) ◽  
pp. 689-699 ◽  
Author(s):  
N.S. MCINTYRE ◽  
P.A. SPEVACK ◽  
M.J. WALZAK

Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.


Author(s):  
K. Barmak

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.


Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.


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