Exact determination of Indium incorporation in (InxGa1–xN/GaN)-multiple quantum well structures by X-ray diffraction and -reflectivity and its impact on optical properties

2004 ◽  
Vol 219 (4) ◽  
Author(s):  
Fabian Schulze ◽  
Jürgen Bläsing ◽  
Armin Dadgar ◽  
Alois Krost
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Quantum Well Structures ◽  
X Ray ◽  
Exact Determination

AbstractWe studied the structural and optical properties of In

High Resolution X-ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures

1995 ◽  
Vol 39 ◽  
pp. 439-448
Author(s):  
A Sanz-Hervas ◽  
A Sacedón ◽  
E.J Abril ◽  
J.L Sanchez-Rojas ◽  
C. Villar ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Structural Information ◽  
Multiple Quantum Well ◽  
Growth Conditions ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

In this work we apply high-resolution X-ray diffractometry to the study of InGaAs/GaAs multiple quantum well structures on (001) and(lll)B GaAs substrates. The samples consisted of p-i-n diodes with a multiple quantum well embedded in the i-region and were simultaneously grown on (001) and (111)B substrates by molecular beam epitaxy. For the characterization we have used symmetric and asymmetric reflections at different azimuthal positions. The interpretation of the diffraction profiles has been possible thanks to our recently developed simulation model, which allows the calculation of any reflection regardless of the substrate orientation. X-ray results about composition and thickness are very similar in the samples simultaneously grown on both orientations as expected from our specific growth conditions. The information obtained from X-ray characterization is consistent with the results of photoluminescence and photocurrent measurements within the experimental uncertainty of the techniques. In (lll)B samples, X-ray diffractometry provides structural information which cannot be easily obtained from optical characterization techniques.

Growth and Characterization Of GexSi1−x/ Si Multiple Quantum Well Structures

1992 ◽  
Vol 263 ◽  
Author(s):  
D.W. Greve ◽  
R. Misra ◽  
M.A. Capano ◽  
T.E. Schlesinger
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Small Variation ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
High Quality ◽  
Quantum Well Structures ◽  
X Ray

ABSTRACTWe report on the growth and characterization of multiple quantum well structures by UHV/ CVD epitaxy. X- ray diffraction is used to verify the expected layer periodicity and to determine the quantum well thickness. Photoluminescence measurements show peaks which we associate with recombination of excitons in the quantum wells. The measurements are consistent with high quality layers with small variation in quantum well thickness across a wafer.

Spectroscopic determination of the band discontinuity in GaSb/AlSb multiple-quantum-well structures

1988 ◽  
Vol 37 (11) ◽  
pp. 6278-6284 ◽  
Author(s):  
U. Cebulla ◽  
G. Tränkle ◽  
U. Ziem ◽  
A. Forchel ◽  
G. Griffiths ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Spectroscopic Determination ◽  
Multiple Quantum ◽  
Quantum Well Structures
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