High-resolution X-ray diffraction study of strained InGaAsP/InP multiple quantum well structures grown using all solid sources

2001 ◽  
Vol 4 (6) ◽  
pp. 631-636 ◽  
Author(s):  
L. Sun ◽  
D.H. Zhang ◽  
H.Q. Zheng ◽  
S.F. Yoon ◽  
C.H. Kam
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Diffraction Study ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

High Resolution X-ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures

1995 ◽  
Vol 39 ◽  
pp. 439-448
Author(s):  
A Sanz-Hervas ◽  
A Sacedón ◽  
E.J Abril ◽  
J.L Sanchez-Rojas ◽  
C. Villar ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Structural Information ◽  
Multiple Quantum Well ◽  
Growth Conditions ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

In this work we apply high-resolution X-ray diffractometry to the study of InGaAs/GaAs multiple quantum well structures on (001) and(lll)B GaAs substrates. The samples consisted of p-i-n diodes with a multiple quantum well embedded in the i-region and were simultaneously grown on (001) and (111)B substrates by molecular beam epitaxy. For the characterization we have used symmetric and asymmetric reflections at different azimuthal positions. The interpretation of the diffraction profiles has been possible thanks to our recently developed simulation model, which allows the calculation of any reflection regardless of the substrate orientation. X-ray results about composition and thickness are very similar in the samples simultaneously grown on both orientations as expected from our specific growth conditions. The information obtained from X-ray characterization is consistent with the results of photoluminescence and photocurrent measurements within the experimental uncertainty of the techniques. In (lll)B samples, X-ray diffractometry provides structural information which cannot be easily obtained from optical characterization techniques.

High-resolution X-ray diffraction study of AlAs/Al0.5Ga0.5As/GaAs quantum well structures grown by molecular beam epitaxy on (11n)A GaAs

2000 ◽  
Vol 213 (3-4) ◽  
pp. 214-220
Author(s):  
C Villar ◽  
A Sanz-Hervás ◽  
M Aguilar ◽  
P.O Vaccaro ◽  
E.J Abril ◽  
...  
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Diffraction Study ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

High-resolution X-ray scattering from CdMnTe/CdTe multiple quantum well structures

1997 ◽  
Vol 19 (2-4) ◽  
pp. 447-454 ◽  
Author(s):  
C. R. Li ◽  
B. K. Tanner ◽  
P. Möck ◽  
J. H. C. Hogg ◽  
B. Lunn ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Growth and Characterization Of GexSi1−x/ Si Multiple Quantum Well Structures

1992 ◽  
Vol 263 ◽  
Author(s):  
D.W. Greve ◽  
R. Misra ◽  
M.A. Capano ◽  
T.E. Schlesinger
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Small Variation ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
High Quality ◽  
Quantum Well Structures ◽  
X Ray

ABSTRACTWe report on the growth and characterization of multiple quantum well structures by UHV/ CVD epitaxy. X- ray diffraction is used to verify the expected layer periodicity and to determine the quantum well thickness. Photoluminescence measurements show peaks which we associate with recombination of excitons in the quantum wells. The measurements are consistent with high quality layers with small variation in quantum well thickness across a wafer.

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