scholarly journals Structural and optical properties of Co and Ni doped ZnO thin films prepared by RF magnetron sputtering

2017 ◽  
Vol 18 (3) ◽  
pp. 302-308 ◽  
Author(s):  
I.D. Stolyarchuk ◽  
G.I. Kleto ◽  
A. Dziedzic

We have reported the effect of Co and Ni doping on structural and optical properties of ZnO thin films prepared by RF reactive sputtering technique. The composite targets were formed by mixing and pressing of ZnO, Mn3O4, CoO and NiO powders. The thin films were deposited on sapphire, quartz and glass substrates. The structure study confirms the formation of the hexagonal wurtzite ZnO without any secondary phase in transition metal (Co, Ni) - doped samples. Cross-sectional TEM images of all studied samples show a denseand uniformly textured structure composed of column-like structure along the growth direction. The surface morphology of the thin films was studied using atomic force microscopy (AFM). Different surface morphology (AFM) images were obtained depending on the film composition and growth conditions. Optical absorption spectra suggest of substitution Zn2+ ions in ZnO lattice by transition metal atoms. The shift of the absorption edge due to decrease the energy band gap with increasing cobalt content and complex dependence of the energy band gap on content of nickel was observed in optical absorption spectra of the studied films. The room temperature photoluminescence peaks are attributed to near band gap emission and vacancy or defect states.

2006 ◽  
Vol 959 ◽  
Author(s):  
Abhishek Joshi ◽  
Edwin Davis ◽  
Kaushik Narsingi ◽  
Omar Manasreh ◽  
B. D. Weaver

ABSTRACTOptical absorption and photoluminescence techniques were used to investigate the band gap of colloidal CdSe/ZnS core/shell nanocrystals matrixed in a UV curable resin. The band gap was measured for several nanocrystals with size ranging between 1.9 and 4.0 nm. The band gap (Eg) was determined from the first exciton peaks observed in the optical absorption spectra. Both Debye and Einstein temperatures were estimated from fitting the energy band gap vs. temperature using two different empirical expressions.


2010 ◽  
Vol 404 (1) ◽  
pp. 186-191 ◽  
Author(s):  
J.-K. Chung ◽  
J. W. Kim ◽  
D. Do ◽  
S. S. Kim ◽  
T. K. Song ◽  
...  

2016 ◽  
Vol 28 (4) ◽  
pp. 347-354 ◽  
Author(s):  
Javed Iqbal ◽  
Asim Jilani ◽  
P.M. Ziaul Hassan ◽  
Saqib Rafique ◽  
Rashida Jafer ◽  
...  

2020 ◽  
Vol 12 (32) ◽  
pp. 36380-36388 ◽  
Author(s):  
Yonghwan Lee ◽  
Inseok Yang ◽  
Hark Hoe Tan ◽  
Chennupati Jagadish ◽  
Siva Krishna Karuturi

Author(s):  
Abdulazeez O. Mousa ◽  
Nadir F. Habubi ◽  
Noor A. Nema

ZnO thin films deposited on various substrates including glass, quartz, and ITO (Indium Tin Oxide) coated on glass substrates have been conducted by (CSP) technique. Characterization techniques of X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible, and photoluminescence (PL) spectra measurements were performed to investigate the effects of substrate on the structural and optical properties of ZnO thin films. Samples were prepared the thickness of thin films are (80 nm) and substrate temperature kept at (400oC) in all cases. Compressed nitrogen was used as a carrier gas. The XRD results indicated that the synthesized ZnO thin films have a pure wurtzite (hexagonal phase) structure. It can be seen that the highest texture coefficient was in (002) plane . So when a good crystalline substrate like quartz is used for depositing the film, the lattice matching with the deposited film material would be better. AFM measurement showed the grain size ranging from (62-86) nm. The optical studies showed that the thin film for ITO coated glass substrate higher transmittance than glass and quartz substrate. The optical band gap for ZnO thin films have two values for the same sample, and we will note the band gap of the thin films increasing with increase the crystalline of substrate. The energy gap from photoluminescence (PL) spectra is (3.369 eV) for all samples.


2012 ◽  
Vol 111 (7) ◽  
pp. 073511 ◽  
Author(s):  
R. C. Rai ◽  
M. Guminiak ◽  
S. Wilser ◽  
B. Cai ◽  
M. L. Nakarmi

2017 ◽  
Vol 7 (3) ◽  
Author(s):  
Patrick Akata Nwofe

The study reports on the effects of different concentration of palladium impurities on the compositional and optical properties of Palladium Doped Antimony Sulphide (Pd-xSb2S3) thin films grown by the chemical bath deposition method. The films were grown at room temperature and other deposition conditions such as the bath temperature, pH, complexing agents were kept constant. The concentration of the dopants were varied between 0.1 M to 0.3 M. The films were annealed at an annealing temperature of 200  oC  for 1 hour. The films were characterised using the Rutherford Back Scattering (RBS) techniques and optical spectroscopy (transmittance versus wavelength, absorbance versus wavelength) to investigate the composition, and optical constants (optical absorption coefficient, energy band gap, and extinction coefficient) respectively. X-ray diffractometry and Scanning electron microscopy were also used to investigate the structural and morphological properties of the layers. The results show that the transmittances of the doped layers were higher compared to the as-deposited layers. The energy band gap was direct, and were found to be decreased for the doped layers, compared to the as-grown films. The values of the energy band gap were typically ≤ 2.30 eV for the former and 2.48 eV for the latter. These values strongly suggest the use of these films in optoelectronic applications especially in solar cell devices.


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