Energy Band Gap Shift of ZnS-ZnO Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 404 (1) ◽  
pp. 186-191 ◽  
Author(s):  
J.-K. Chung ◽  
J. W. Kim ◽  
D. Do ◽  
S. S. Kim ◽  
T. K. Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Energy Band ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Energy Band Gap

Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition

2003 ◽  
Vol 764 ◽  
Author(s):  
Sang Yeol Lee ◽  
Yuan Li ◽  
Jang-Sik Lee ◽  
J. K. Lee ◽  
M. Nastasi ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Energy Band ◽  
Pulsed Laser ◽  
Processing Parameters ◽  
Laser Deposition ◽  
Energy Band Gap ◽  
Sapphire Substrates ◽  
Optical Energy Band Gap

AbstractZnCdO thin films were deposited on (001) sapphire substrates by pulsed laser deposition. Modulation of the energy band gap of ZnCdO was induced by changing the processing parameters. The optical energy band gap of ZnCdO thin films, measured by photoluminescence and transmittance, changed from 3.289 eV to 3.311 eV due to the variation of annealing temperatures. The change of the optical properties was attributed to the change of the stoichiometry of ZnxCd1-xO as illustrated by Rutherford backscattering spectroscopy.

Band Gap Optimization by Ga and S Additions in CuInSe2 for Solar Cell Absorber Applications

2011 ◽  
Vol 110-116 ◽  
pp. 1176-1180
Author(s):  
Badrul Munir ◽  
Kim Kyoo Ho
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Energy Band ◽  
Pulsed Laser ◽  
Rf Magnetron Sputtering ◽  
Laser Deposition ◽  
Chalcopyrite Structure ◽  
Energy Band Gap ◽  
Absorption Coefficients ◽  
Optimum Energy

Gallium or sulphur additions in CuInSe2 were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films show a chalcopyrite structure with the S addition increases the favourable (112) peak. The optical absorption coefficients were slightly decreased. The films energy band gap could be shifted from 1.04 to 1.68eV by adjusting the mole ratio of S/(S+Se) and In/(In+Ga). It is possible to obtain the optimum energy band gap by adding S solute or Ga at a certain ratio in favour of Se and In respectively. It is also necessary to control the ratio of Ga and S additions and to retain a certain portion of In to provide better properties of CIS films.

Electroreflectance study of antimony doped ZnO thin films grown by pulsed laser deposition

2021 ◽  
Vol 120 ◽  
pp. 111461
Author(s):  
Sukittaya Jessadaluk ◽  
Narathon Khemasiri ◽  
Prapakorn Rattanawarinchai ◽  
Navaphun Kayunkid ◽  
Sakon Rahong ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

Band gap modulation of ZnCdO alloy thin films with different Cd contents grown by pulsed laser deposition

2013 ◽  
Vol 547 ◽  
pp. 59-62 ◽  
Author(s):  
Jie Jiang ◽  
Liping Zhu ◽  
Yang Li ◽  
Yanmin Guo ◽  
Weishun Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Band Gap Modulation

Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition

2002 ◽  
Vol 420-421 ◽  
pp. 107-111 ◽  
Author(s):  
H Kim ◽  
J.S Horwitz ◽  
S.B Qadri ◽  
D.B Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

ZnO thin films on Si(1 1 1) grown by pulsed laser deposition from metallic Zn target

2006 ◽  
Vol 253 (2) ◽  
pp. 841-845 ◽  
Author(s):  
Jie Zhao ◽  
Lizhong Hu ◽  
Zhaoyang Wang ◽  
Jie Sun ◽  
Zhijun Wang
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films
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