Simulation of Power Electronic Systems

2002 ◽  
Vol 122 (8) ◽  
pp. 775-780
Author(s):  
Yasuaki Kuroe ◽  
Mikihiko Matsui
2007 ◽  
Author(s):  
R. E. Crosbie ◽  
J. J. Zenor ◽  
R. Bednar ◽  
D. Word ◽  
N. G. Hingorani

2020 ◽  
Vol 9 (3) ◽  
pp. 63-72
Author(s):  
Andreas Bendicks ◽  
Tobias Dorlemann ◽  
Timo Osterburg ◽  
Stephan Frei

2015 ◽  
Vol 821-823 ◽  
pp. 810-813 ◽  
Author(s):  
Maxime Berthou ◽  
Dominique Planson ◽  
Dominique Tournier

With the commercial availability of SiC power transistors, this decade will mark an important breakthrough in power transistor technology. However, in power electronic systems, disturbances may place them in short-circuit condition and little knowledge exist about their SC capability. This paper presents our study of SiC MOSFETs, JFETs and BJT under capacitive load short-circuit up to 600V.


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