Characteristics of Arc Voltage of High-Current Air Arc in Sealed Chamber

2012 ◽  
Vol 132 (8) ◽  
pp. 740-746 ◽  
Author(s):  
Shinya Watanabe ◽  
Kentaro Kokura ◽  
Kyohei Minoda ◽  
Shinji Sato
Keyword(s):  
High Current ◽  
Arc Voltage

Arc voltage characteristics of high current fault arcs in long gaps

2000 ◽  
Vol 15 (2) ◽  
pp. 791-795 ◽  
Author(s):  
Y. Goda ◽  
M. Iwata ◽  
K. Ikeda ◽  
S. Tanaka
Keyword(s):  
High Current ◽  
Arc Voltage

Noise arc voltage and dynamic constriction of high-current vacuum arcs

1991 ◽  
Vol 24 (12) ◽  
pp. 2179-2189 ◽  
Author(s):  
Y Wang ◽  
G C Damstra
Keyword(s):  
High Current ◽  
Arc Voltage

Estimation of Arc voltage characteristic for high current fault Arcs

2017 ◽  
Author(s):  
Pranav Katare ◽  
Rajaramamohanarao Chennu ◽  
B. Ramachandra ◽  
S. Sudhakara Reddy ◽  
Anupam Awasthi
Keyword(s):  
Voltage Characteristic ◽  
High Current ◽  
Arc Voltage

Characteristics of the Arc Voltage of a High-Current Air Arc in a Sealed Chamber

2013 ◽  
Vol 186 (1) ◽  
pp. 34-42 ◽  
Author(s):  
Shinya Watanabe ◽  
Kentaro Kokura ◽  
Kyohei Minoda ◽  
Shinji Sato
Keyword(s):  
High Current ◽  
Arc Voltage

Spatial resolution of X-ray microanalysis in thin foils

1978 ◽  
Vol 36 (1) ◽  
pp. 544-545
Author(s):  
R. Hutchings ◽  
I.P. Jones ◽  
M.H. Loretto ◽  
R.E. Smallman
Keyword(s):  
Spatial Resolution ◽  
Electron Probe ◽  
Beam Divergence ◽  
Inelastic Interaction ◽  
Specimen Thickness ◽  
High Current ◽  
Beam Spreading ◽  
X Ray ◽  
Thin Foils ◽  
Complex Calculation

There is increasing interest in X-ray microanalysis of thin specimens and the present paper attempts to define some of the factors which govern the spatial resolution of this type of microanalysis. One of these factors is the spreading of the electron probe as it is transmitted through the specimen. There will always be some beam-spreading with small electron probes, because of the inevitable beam divergence associated with small, high current probes; a lower limit to the spatial resolution is thus 2αst where 2αs is the beam divergence and t the specimen thickness.In addition there will of course be beam spreading caused by elastic and inelastic interaction between the electron beam and the specimen. The angle through which electrons are scattered by the various scattering processes can vary from zero to 180° and it is clearly a very complex calculation to determine the effective size of the beam as it propagates through the specimen.

Precipitation in silicon: Microanalysis

1988 ◽  
Vol 46 ◽  
pp. 474-475
Author(s):  
R.W. Carpenter
Keyword(s):  
Transition Metals ◽  
Spatial Resolution ◽  
Thin Foil ◽  
Precipitation Reaction ◽  
High Current ◽  
Reaction Products ◽  
Carbon And Nitrogen ◽  
Dielectric Layers ◽  
Precipitation Processes ◽  
Areas Of Interest

Interest in precipitation processes in silicon appears to be centered on transition metals (for intrinsic and extrinsic gettering), and oxygen and carbon in thermally aged materials, and on oxygen, carbon, and nitrogen in ion implanted materials to form buried dielectric layers. A steadily increasing number of applications of microanalysis to these problems are appearing. but still far less than the number of imaging/diffraction investigations. Microanalysis applications appear to be paced by instrumentation development. The precipitation reaction products are small and the presence of carbon is often an important consideration. Small high current probes are important and cryogenic specimen holders are required for consistent suppression of contamination buildup on specimen areas of interest. Focussed probes useful for microanalysis should be in the range of 0.1 to 1nA, and estimates of spatial resolution to be expected for thin foil specimens can be made from the curves shown in Fig. 1.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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