Pressure Sensor Monolithically Integrating MEMS and CMOS-LSI with CMOS Compatible “Back-end-of-line MEMS processes”

2010 ◽  
Vol 130 (5) ◽  
pp. 170-175
Author(s):  
Tsukasa Fujimori ◽  
Hideaki Takano ◽  
Yuko Hanaoka ◽  
Yasushi Goto
Keyword(s):  
Pressure Sensor ◽  
Cmos Compatible

Test structures for CMOS-compatible silicon pressure sensor reliability characterization

2000 ◽  
Author(s):  
Enric Montane ◽  
Sebastian A. Bota ◽  
Santiago Marco ◽  
M. Carmona ◽  
Josep Samitier
Keyword(s):  
Pressure Sensor ◽  
Cmos Compatible

Absolute Pressure Sensor Based on Standard CMOS Process

2014 ◽  
Vol 875-877 ◽  
pp. 2238-2242
Author(s):  
Ting Yu ◽  
Ben Xian Peng ◽  
Feng Qi Yu
Keyword(s):  
Pressure Sensor ◽  
Sacrificial Layer ◽  
High Sensitivity ◽  
Pressure Change ◽  
Absolute Pressure ◽  
Cmos Process ◽  
Standard Cmos Process ◽  
Cmos Compatible ◽  
Cost Efficient ◽  
Sensing Membrane

A CMOS compatible absolute pressure sensor with extend floating gate is developed with simple circuitry to realize high sensitivity, linearity, and manufacturability. The pressure sensitive membrane formation is based on the standard CMOS process with simple metal sacrificial layer removal step, which is very cost-efficient and fully CMOS compatible, enabling monolithic integration of circuitry. ANSYS and SPICE simulation results show that the proposed sensor can worked properly under 500K Pa, and the square sensing membrane of 100x100 μm 2 shows a good linearity over a pressure change ranging from 5 Pa to 500K Pa.

Fabrication of a CMOS compatible pressure sensor for harsh environments

2004 ◽  
Vol 14 (11) ◽  
pp. 1478-1483 ◽  
Author(s):  
L S Pakula ◽  
H Yang ◽  
H T M Pham ◽  
P J French ◽  
P M Sarro
Keyword(s):  
Pressure Sensor ◽  
Harsh Environments ◽  
Cmos Compatible

CMOS Compatible Capacitive Pressure Sensor with Read-Out Electronics

1990 ◽  
pp. 574-580 ◽  
Author(s):  
M. Kandler ◽  
J. Eichholz ◽  
Y. Manoli ◽  
W. Mokwa
Keyword(s):  
Pressure Sensor ◽  
Capacitive Pressure Sensor ◽  
Cmos Compatible
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