Improvement of resistance to corrosion of stainless steel 304 in acid solutions by simultaneous deposition with doping of Si using KrF excimer laser

1990 ◽  
Vol 5 (12) ◽  
pp. 2835-2840 ◽  
Author(s):  
Koji Sugioka ◽  
Hideo Tashiro ◽  
Koichi Toyoda ◽  
Hideyuki Murakami ◽  
Hiroshi Takai
Keyword(s):  
Stainless Steel ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polarization Resistance ◽  
Cathodic Polarization ◽  
Acid Solutions ◽  
Stainless Steel 304 ◽  
Quantitative Verification ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

The chemical stability of the surface of stainless steel (SUS) 304 in acid immersion tests is greatly improved by the laser implant-deposition (LID) process, i.e., the simultaneous deposition and incorporation of silicon by KrF excimer laser irradiation. The etching depths of the treated samples in 1.32 N HCl solution are substantially zero at the laser irradiation conditions of more than 40 pulses and of more than 400 mJ/cm2 at the surface. By the quantitative verification of cathodic polarization in 1 N H2SO4, the highest polarization resistance is estimated to be 26.7 times that of the nontreated sample.

Transient absorption and fluorescence spectroscopy in fused silica induced by pulsed KrF excimer laser irradiation

1991 ◽  
Vol 59 (26) ◽  
pp. 3369-3371 ◽  
Author(s):  
N. Leclerc ◽  
C. Pfleiderer ◽  
J. Wolfrum ◽  
K. Greulich ◽  
W. P. Leung ◽  
...  
Keyword(s):  
Fluorescence Spectroscopy ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Transient Absorption ◽  
Fused Silica ◽  
Absorption And Fluorescence Spectroscopy ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

scholarly journals Formation of Varistor Layer at the Surface of SrTiO3-Based Ceramics by KrF Excimer Laser Irradiation.

1999 ◽  
Vol 107 (1252) ◽  
pp. 1229-1231 ◽  
Author(s):  
Jong-Won YOON ◽  
Katsuki HIGAKI ◽  
Masaru MIYAYAMA ◽  
Tetsuichi KUDO
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

Improved Abruptness of Si/Sin Interface by ArF Excimer-Laser Pre-Annealing to Sin

1994 ◽  
Vol 345 ◽  
Author(s):  
Yasutaka Uchida ◽  
Masakiyo Matsumura
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Resolution Limit ◽  
Laser Recrystallization ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Krf Excimer Laser ◽  
Film Annealing

AbstractXPS measurement showed that undesirable SiNH component was reduced drastically from the low-temperature deposited SiN surface by intense ArF excimer-laser irradiation. Although the improved layer was as thin as 15nm, it was very effective to stop diffusion of N atoms from the bottom SiN layer to the top Si layer during the excimer-laser recrystallization step. N-diffused Si layer at the Si/SiN interface was less than the XPS resolution limit for the pre-annealed SiN structure, but about 5nm thick. As a result, the field-effect mobility of the poly-Si/SiN TFT was increased drastically by laser-irradiation to SiN film. Annealing characteristics are also presented for the various SiN film thicknesses and for both the ArF and KrF excimer-laser lights.

Observation of graphene growing process on SiC(0001) surface formed by KrF excimer-laser irradiation

2016 ◽  
Author(s):  
Masakazu Hattori ◽  
Hiroshi Ikenoue ◽  
Daisuke Nakamura ◽  
Tatsuo Okada
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

Mechanism of silicon implant-deposition for surface modification of stainless steel 304 using KrF-excimer laser

1995 ◽  
Vol 60 (1) ◽  
pp. 41-47 ◽  
Author(s):  
M. Jyumonji ◽  
K. Sugioka ◽  
H. Takai ◽  
H. Tashiro ◽  
K. Toyoda
Keyword(s):  
Stainless Steel ◽  
Surface Modification ◽  
Excimer Laser ◽  
Stainless Steel 304 ◽  
Krf Excimer Laser
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