Interface structure of AlN/TiN/MgO(001) prepared by molecular beam epitaxy

1999 ◽  
Vol 14 (12) ◽  
pp. 4685-4689 ◽  
Author(s):  
X. L. Ma ◽  
Y. Sugawara ◽  
N. Shibata ◽  
Y. Ikuhara
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Interface Structure ◽  
Cross Sectional ◽  
Growth Orientation ◽  
Resolution Electron ◽  
Atomistic Structure

Thin AlN films were grown by molecular beam epitaxy on MgO(001) substrate with a thin TiN buffer layer. The as-prepared AlN/TiN/MgO(001) interfaces have been characterized by cross-sectional high-resolution electron microscopy (HREM). It is found that the thin TiN buffer layer is epitaxially grown on the MgO(001) substrate and hexagonal AlN epitaxially on the as-received TiN(001). Based on the growth orientation relationship and HREM images, atomistic structure models for the AlN/TiN interface are proposed, image simulated, and compared with experimental images.

A HREM study of V/Al2O3 interface

1992 ◽  
Vol 50 (1) ◽  
pp. 146-147
Author(s):  
Y. Ikuhara ◽  
P. Pirouz ◽  
A. H. Heuer ◽  
S. Yadavalli ◽  
C. P. Flynn
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
High Resolution ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Interface Structure ◽  
Cross Sectional ◽  
Plan View ◽  
Resolution Electron

The interface structure between vanadium and the R-plane of sapphire (α-Al2O3) was studied by conventional and cross-sectional high resolution electron microscopy (HREM) to clarify the atomic structure of the interface.A 57 nm thick vanadium film was deposited on the (1102) (R) plane of sapphire by molecular beam epitaxy (MBE) at a substrate temperature of 920 K in a vacuum of 10-10torr. The HREM observations of the interface were done from three directions: two cross-sectional views (parallel to [0221]Al2O3 and [1120]Al2O3) and a plan view (parallel to [2201]Al2O3) by a top-entry JEOL 4000EX electron microscope (400 kV).

High Resolution Electron Microscopy Studies of Interfaces Between Al203 Substrates and MBE Grown NB Films

1990 ◽  
Vol 209 ◽  
Author(s):  
J. Mayer ◽  
J. Dura ◽  
C.P. Flynn ◽  
M. RüHle
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Metal Film ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Sapphire Substrates ◽  
Resolution Electron ◽  
20 Nm ◽  
Atomistic Structure

ABSTRACTSingle crystal niobium films were grown by Molecular Beam Epitaxy (MBE) on (0001)s sapphire substrates. Cross-sectional specimens with thickness of <20 nm were prepared so that the Nb/A1203 interface could be investigated by high resolutionelectron microscopy (HREM). The orientation relationship between the metal film and the ceramic substrate was verified by selected area diffraction: (111)Nb ║(0001)S and [110]Nb║[2110]S. The atomistic structure of the interface was identified by HREM.

scholarly journals The Structure of Al/GaAs Interfaces

1986 ◽  
Vol 77 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
C. Nelson ◽  
R. Gronsky ◽  
J. Washburn ◽  
R. Ludeke
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Molecular Beam Epitaxy Chamber

ABSTRACTThe structure of Al/GaAs interfaces was investigated by high resolution electron microscopy. The Al layers Were deposited in a molecular beam epitaxy chamber with a vacuum base pressure of <1×10∼8 Pa. The GaAs substrate temperature varied during Al deposition from -30°C to 400°C. Deposition of Al on cold substrates £25°C resulted in epitaxial growth of (001) Al on (001) GaAs. Droplets of Ga were observed in samples with the substrate temperature at -30°C (1×2) and 0°C (c(2×8)). Postannealing of the last sample caused formation of the AlGaAs phase. Deposition of Al on hot substrates (150°C and 400°C) resulted in the formation of the AlGaAs phase, which separated (110) oriented Al from (001)GaAs.

High‐resolution electron microscopy study of (Ca,Sr)F2/GaAs grown by molecular‐beam epitaxy

1987 ◽  
Vol 61 (6) ◽  
pp. 2410-2412 ◽  
Author(s):  
Hélène Héral ◽  
Louis Bernard ◽  
André Rocher ◽  
Chantal Fontaine ◽  
Antonio Munoz‐Yague
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Resolution Electron

Metallic thin Films on Ceramic Substrates: Stress-Enhanced Intermixing and Spinel Formation

1994 ◽  
Vol 356 ◽  
Author(s):  
P. Pirouz ◽  
Y. Ikuhara ◽  
C. P. Flynn
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Spinel Phase ◽  
High Resolution Electron Microscopy ◽  
Metallic Thin Films ◽  
Misfit Dislocations ◽  
Cross Sectional ◽  
Ceramic Substrates ◽  
Resolution Electron ◽  
Mgo Substrate

AbstractMultilayers of vanadium and MgO with different layer thicknesses were grown by molecular beam epitaxy (MBE) and the V/MgO and MgO/V interfaces were investigated by cross-sectional high resolution electron microscopy (HREM). For the smallest layer thickness of 5 nm, the vanadium and MgO films were coherent with each other and no misfit dislocations were observed. For the larger layer thicknesses of 10 nm and 50 nm, the vanadium surface exhibited undulations, and for the largest thickness, interdiffusion had occurred between the MgO film and the underlying V substrate and an interfacial spinel phase had formed. These observations are discussed in terms of the morphological instabilities of the strained vanadium film as it grows on the MgO substrate.

Transmission Electron Microscope Study of An Ordered Structure in GaAs0.5 Sb0.5 Grown By Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
Y. E. Ihm ◽  
N. Otsuka ◽  
Y. Hirotsu ◽  
J. Klem ◽  
H. Morkoc
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Dark Field ◽  
Ordered Structure ◽  
Domain Structures ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Diffraction Patterns

ABSTRACTThe ordered structure in a (100) GaAs0.5 Sb0.5 epilayer grown by molecular beam epitaxy has been studied by transmission electron microscopy. Domain structures are observed in dark field images of superstructure reflections. The ordered structure is derived by the analysis of diffraction patterns taken from single domains. The ordered structure is described as an alternate stacking of As and Sb planes in the <111> direction of the FCC sublattice. The alternate stacking of As and Sb plane is directly observed by high resolution electron microscopy.

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