High Resolution Electron Microscopy Studies of Interfaces Between Al203 Substrates and MBE Grown NB Films

1990 ◽  
Vol 209 ◽  
Author(s):  
J. Mayer ◽  
J. Dura ◽  
C.P. Flynn ◽  
M. RüHle
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Metal Film ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Sapphire Substrates ◽  
Resolution Electron ◽  
20 Nm ◽  
Atomistic Structure

ABSTRACTSingle crystal niobium films were grown by Molecular Beam Epitaxy (MBE) on (0001)s sapphire substrates. Cross-sectional specimens with thickness of <20 nm were prepared so that the Nb/A1203 interface could be investigated by high resolutionelectron microscopy (HREM). The orientation relationship between the metal film and the ceramic substrate was verified by selected area diffraction: (111)Nb ║(0001)S and [110]Nb║[2110]S. The atomistic structure of the interface was identified by HREM.

A HREM study of V/Al2O3 interface

1992 ◽  
Vol 50 (1) ◽  
pp. 146-147
Author(s):  
Y. Ikuhara ◽  
P. Pirouz ◽  
A. H. Heuer ◽  
S. Yadavalli ◽  
C. P. Flynn
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
High Resolution ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Interface Structure ◽  
Cross Sectional ◽  
Plan View ◽  
Resolution Electron

The interface structure between vanadium and the R-plane of sapphire (α-Al2O3) was studied by conventional and cross-sectional high resolution electron microscopy (HREM) to clarify the atomic structure of the interface.A 57 nm thick vanadium film was deposited on the (1102) (R) plane of sapphire by molecular beam epitaxy (MBE) at a substrate temperature of 920 K in a vacuum of 10-10torr. The HREM observations of the interface were done from three directions: two cross-sectional views (parallel to [0221]Al2O3 and [1120]Al2O3) and a plan view (parallel to [2201]Al2O3) by a top-entry JEOL 4000EX electron microscope (400 kV).

Interface structure of AlN/TiN/MgO(001) prepared by molecular beam epitaxy

1999 ◽  
Vol 14 (12) ◽  
pp. 4685-4689 ◽  
Author(s):  
X. L. Ma ◽  
Y. Sugawara ◽  
N. Shibata ◽  
Y. Ikuhara
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Interface Structure ◽  
Cross Sectional ◽  
Growth Orientation ◽  
Resolution Electron ◽  
Atomistic Structure

Thin AlN films were grown by molecular beam epitaxy on MgO(001) substrate with a thin TiN buffer layer. The as-prepared AlN/TiN/MgO(001) interfaces have been characterized by cross-sectional high-resolution electron microscopy (HREM). It is found that the thin TiN buffer layer is epitaxially grown on the MgO(001) substrate and hexagonal AlN epitaxially on the as-received TiN(001). Based on the growth orientation relationship and HREM images, atomistic structure models for the AlN/TiN interface are proposed, image simulated, and compared with experimental images.

Interfacial Atomic Structures During Cobalt Silicidation

1990 ◽  
Vol 202 ◽  
Author(s):  
A. Catana ◽  
P.E. Schmid
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Type B ◽  
Cross Sectional ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Predominant Orientation ◽  
Lower Temperature

ABSTRACTHigh Resolution Electron Microscopy (HREM) and image calculations are combined to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. The samples are prepared by UHV e-beam evaporation of Co layers (2 nm) followed by annealing at 300°C or 400°C. Cross-sectional observations at an atomic scale show that the silicidation of Co at the lower temperature yields epitaxial CoSi/Si domains such that [111]Si // [111]CoSi and <110>Si // <112>CoSi. At about 400°C CoSi2 nucleates at the CoSi/Si interface. During the early stages of this chemical reaction, an epitaxial CoSi/CoSi2/Si system is observed. The predominant orientation is such that (021) CoSi planes are parallel to (220) CoSi2 planes, the CoSi2/Si interface being of type B. The growth of CoSi2 is shown to proceed at the expense of both CoSi and Si.

Chemical and Structural Analysis of Nitridated Sapphire

1997 ◽  
Vol 482 ◽  
Author(s):  
Y. Cho ◽  
S. Rouvimov ◽  
Y. Kim ◽  
Z. Liliental-Weber ◽  
E. R. Weber
Keyword(s):  
Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Structural Analysis ◽  
Photoelectron Spectroscopy ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Resolution Electron

AbstractThe incorporation of nitrogen into sapphire substrates during nitridation was studied by xray photoelectron spectroscopy (XPS). An increase in the intensity of nitrogen 1s peak in XPS was observed upon longer nitridation. The surface morphology of the substrates was characterized by atomic force microscopy (AFM). High resolution electron microscopy (HREM) was employed for structural analysis. The cross sectional TEM showed a thin layer of AlN buried between amorphous AlNxO1−x and sapphire. This is the first direct observation of AlN on sapphire. The TEM images show a deeper penetration depth of nitrogen into a longer nitridated sapphire.

Study of the growth mechanism of highly in-plane aligned α-axis YBa2Cu3O7−x thin films on LaSrGaO4 substrate by high resolution electron microscopy

1996 ◽  
Vol 11 (12) ◽  
pp. 2951-2954 ◽  
Author(s):  
J. G. Wen ◽  
S. Mahajan ◽  
H. Ohtsuka ◽  
T. Morishita ◽  
N. Koshizuka
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Plan View ◽  
Oriented Film ◽  
Resolution Electron ◽  
Average Size

Highly in-plane aligned α-axis YBa2Cu3O7−x thin films deposited on (100) LaSrGaO4 substrates by a self-template method were studied by high-resolution electron microscopy along three orthogonal 〈100〉 axes of the substrate. Plan-view images confirm that the majority of the film preferentially aligns across the entire substrate except for very few misaligned domains with average size 10 nm2. Cross-sectional images along the [100] orientation of YBa2Cu3O7−x reveal that in-plane aligned α-axis YBa2Cu3O7−x is grown on a template layer dominated by c-axis oriented film. This strongly suggests that the in-plane alignment of α-axis YBa2Cu3O7−x thin films on (100) LaSrGaO4 substrates is governed by the different stresses along the b and c axes of the substrate. Cross-sectional images along [001] of the YBa2Cu3O7—x thin film reveal that the 90° domains easily nucleate in the region between α-axis YBa2Cu3O7—x and the YBa4Cu3Ox phase. Cracks along the (001) plane of YBa2Cu3O7−x are found to be due to the large mismatch between the c parameters of the thin film and substrate.

Dependence of Mo/Si Multilayer Morphology on Deposition Angle

1989 ◽  
Vol 160 ◽  
Author(s):  
Yuanda Cheng ◽  
Mary Beth Stearns ◽  
David J. Smith
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Substrate Temperature ◽  
High Resolution Electron Microscopy ◽  
Growth Conditions ◽  
Columnar Growth ◽  
Cross Sectional ◽  
Resolution Electron ◽  
Deposition Angle

AbstractStudies have been made of the dependence of the structure on the deposition angle and the substrate temperature of a series of Mo/Si multilyers fabricated in a UHV system by e-beam evaporation. The detailed morphology was determined by cross-sectional high resolution electron microscopy. Columnar growth in the crystalline Mo layers was found to follow the tangent rule. The overall quality of the multilayers was found to depend strongly on the growth conditions.

Heteroepitaxial Diamond Formed on Silicon Wafer Observed by High Resolution Electron Microscopy

1994 ◽  
Vol 357 ◽  
Author(s):  
Jie Yang ◽  
Zhangda Lin ◽  
Li-Xin Wang ◽  
Sing Jin ◽  
Ze Zhang
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Diamond Crystals ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Hot Filament

AbstractDiamond films with high preferential orientation (111) on silicon (100) crystalline orientation substrates had been obtained by hot-filament chemical vapor deposition (HFCVD) method. X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and high-resolution cross-sectional transmission electron microscopy (HREM) are used to characterizate the structure and morphology of the synthesised diamond films. Diamond (111) plans had been local grown epitaxially on the Si(100) substrate observed by HREM. SEM photographes show that plane diamond crystals have been obtained.

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