Roughness development in electrodeposited ultrathin cobalt and nickel layers

2000 ◽  
Vol 15 (2) ◽  
pp. 458-462 ◽  
Author(s):  
Robert F. Renner ◽  
KNona C. Liddell

For both Co and Ni, a series of electrodeposited films of varying thickness (2–10 nm) was grown under otherwise identical conditions using potentiostatic control. The substrates were pieces of Si wafer onto which a Cu basal layer had been thermally evaporated. Contact mode atomic force microscopy was used to measure both the root-mean-square peak height (nm) and the areal peak density (μm−2) of each film. Root-mean-square (rms) peak heights for Co initially increase with film thickness and then plateau at a layer thickness of 3 nm. For Ni, the rms peak heights increase almost linearly for layer thicknesses less than 11 nm, reaching a value of 6 nm. Peak density shows the opposite trend, decreasing with layer thickness before reaching an approximately constant value for both metals at a film thickness of 4 nm. The atomic force microscopy data indicate that Ni and Co have different deposition mechanisms. A Co film initially nucleates rapidly; then the nucleation phase is followed by multinuclear, multilayer growth. Ni deposits also have initial rapid nucleation, but the dominant growth mode is primarily vertical, with increasing peak heights but no change in peak density. Increased peak density is linearly correlated with decreased peak height for the thinnest films in both systems.

2021 ◽  
Vol 28 (1) ◽  
pp. 71-77
Author(s):  
Jacob A. Cole ◽  
Jefferson A. Cuadra ◽  
Robert M. Panas ◽  
Stuart T. Smith

A model for calculating the X-ray reflectivity (XRR) of surfaces to extract both roughness and waviness features is presented. Expressions of reflectivity intensity are derived as a function of root-mean-square (RMS) roughness σ, RMS waviness σ L , and the cut-off frequency between the features ω0. Experiments were conducted at the Advanced Light Source at Lawrence Berkeley National Laboratory, beamline 8.3.2, on BK7 glass manufactured with a multi-step polishing process to validate the model, and were compared with atomic force microscopy (AFM), Fizeau interferometry and surface profilometry measurements. The parameter results and their deviations for XRR measurements were σ = 2.9 ± 0.2 nm and σ L = 14.6 ± 0.5 nm with a wavelength cut-off of 1/(18 ± 2) µm−1, while the results from the AFM, Fizeau and profilometry measurements were σAFM = 3.4 ± 0.4 nm, σ L,Fizeau = 21.6 nm, σprof = 4.0 ± 0.1 nm, and σ L,prof = 21.4 ± 0.1 nm with cut-offs for the profilometry and Fizeau measurements limited to frequencies of (1/16) µm−1 to (1/4) mm−1.


2002 ◽  
Vol 8 (S02) ◽  
pp. 774-775
Author(s):  
D.L. Pechkis ◽  
C. Caragianis-Broadbridge ◽  
A.H. Lehman ◽  
K. L. Klein ◽  
J.-P. Han ◽  
...  

1996 ◽  
Vol 68 (23) ◽  
pp. 3353-3355 ◽  
Author(s):  
A. J. Howard ◽  
O. Blum ◽  
H. Chui ◽  
A. G. Baca ◽  
M. H. Crawford

1994 ◽  
Vol 354 ◽  
Author(s):  
C.H. Wang ◽  
W.C. Shih ◽  
R.E. Somekh ◽  
J.E. Evetts ◽  
D. Jackson

AbstractWe report the results of a study of IR emissivity of aluminium films as a function of impurity level, film thickness and sputtering conditions. Preliminary work suggests that for a given level of film impurities and deposition conditions, the JJR emissivity can be minimized with a certain film thickness. The influence of impurity level, film thickness, and sputter pressure on IR emissivity has been correlated with the resistivity and the surface roughness (measured by atomic force microscopy). The results are discussed in the general context of the Drude theory with allowances for the observed roughness.


2005 ◽  
Vol 50 (4) ◽  
pp. 299-304 ◽  
Author(s):  
Changsheng Peng ◽  
Shaoxian Song ◽  
Qingbao Gu

1991 ◽  
Vol 248 ◽  
Author(s):  
G. Coulon ◽  
B. Collin ◽  
D. Chatenay ◽  
D. Ausserre

AbstractAtomic Force Microscopy has been used to study the early stage evolution of the free surface of annealed symmetric poly(styrene-b-n-butylmethacrylate) diblock copolymer thin films. As the lamellar ordering propagates through the film thickness, Islands or holes are formed on the free surface. It Is shown that, depending on the Initial film thickness, I.e. on the fraction of the film surface occupied by the islands (or holes) In the ordered state, the existence or non-existence of spatial correlations characterizes the ordering kinetics of both islands and holes. However, the limit between these two regimes is not the same in the two cases : in the case of holes, spatial correlations occur for a higher value of the surface coverage than In the case of islands.


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