Lanthanide series doping effects in lead zirconate titanate (PLnZT) thin films

2002 ◽  
Vol 17 (4) ◽  
pp. 871-878 ◽  
Author(s):  
Timothy J. Boyle ◽  
Paul G. Clem ◽  
Bruce A. Tuttle ◽  
Geoffrey L. Brennecka ◽  
Jeffrey T. Dawley ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Lattice Parameter ◽  
Zirconate Titanate ◽  
Doping Effects ◽  
Structural And Electrical Properties ◽  
Tan Δ ◽  
Parameter Values

Lanthanide (Ln) doping of lead zirconate titanate (PLnZT 4/30/70) thin films was conducted to investigate effects on structural and electrical properties. Films were spin-coat deposited from precursor solutions made using a previously reported “basic route to PZT” chemistry. The remanent polarization (Pr), dielectric constant (ε), dielectric loss (tan δ), and lattice parameter values were obtained for each of the doped PLnZT films. Films doped with amphoteric cations (Tb, Dy, Y, and Ho) displayed high Pr values, square hysteresis loops, and enhanced fatigue resistance. Smaller radius Ln-doped films display an increased tendency toward (100) orientation in otherwise (111)-oriented films.

Structural and electrical properties of seeded lead zirconate titanate thin films

2000 ◽  
Vol 375 (1-2) ◽  
pp. 24-28 ◽  
Author(s):  
Aiying Wu ◽  
Li Yang ◽  
P.M Vilarinho ◽  
I.M Miranda Salvado ◽  
J.L Baptista
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Structural And Electrical Properties

Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications

1999 ◽  
Vol 14 (6) ◽  
pp. 2476-2483 ◽  
Author(s):  
Seung-Hyun Kim ◽  
Dong-Joo Kim ◽  
S. K. Streiffer ◽  
A. I. Kingon
Keyword(s):  
Thin Films ◽  
Thin Layer ◽  
Lead Zirconate Titanate ◽  
Fatigue Testing ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Induced Voltage ◽  
Mixed Composition ◽  
Zirconate Titanate

Mixed composition layered lead zirconate titanate (PZT) films sZr/Ti ratio = 30/70 + 65/35d with stoichiometric lead containing PZT thin layer at the film/electrode interface were successfully fabricated by a modified chemical solution deposition method. These modified PZT thin films are highly (111) textured, and have square-shaped P-E hysteresis loops with large remanent polarization and low coercive field, as well as low saturation voltage. In addition, these films show good fatigue and imprint behavior with Pt electrodes; the retained polarization of the modified film was above 50% after fatigue testing to 109 cycles, and the thermally induced voltage shifts (ΔV) were 0.51 V after heating at 150 °C for 4410 s, two times lower than for films without a stoichiometric thin layer.

Thickness and erbium doping effects on the electrical properties of lead zirconate titanate thin films

2003 ◽  
Vol 440 (1-2) ◽  
pp. 26-34 ◽  
Author(s):  
M. Es-Souni ◽  
N. Zhang ◽  
S. Iakovlev ◽  
C.-H. Solterbeck ◽  
A. Piorra
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Erbium Doping ◽  
Zirconate Titanate ◽  
Doping Effects

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

Early Stages of Crystallization of Sol−Gel-Derived Lead Zirconate Titanate Thin Films

2003 ◽  
Vol 15 (5) ◽  
pp. 1147-1155 ◽  
Author(s):  
A. Wu ◽  
P. M. Vilarinho ◽  
I. Reaney ◽  
I. M. Miranda Salvado
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Early Stages ◽  
Zirconate Titanate
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