Ovonic threshold switching selectors for three-dimensional stackable phase-change memory

MRS Bulletin ◽  
2019 ◽  
Vol 44 (09) ◽  
pp. 715-720 ◽  
Author(s):  
Min Zhu ◽  
Kun Ren ◽  
Zhitang Song
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
Threshold Switching ◽  
Image Position ◽  
Change Memory

Abstract

Phase change materials and phase change memory

MRS Bulletin ◽  
2014 ◽  
Vol 39 (8) ◽  
pp. 703-710 ◽  
Author(s):  
Simone Raoux ◽  
Feng Xiong ◽  
Matthias Wuttig ◽  
Eric Pop
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Image Position ◽  
Change Memory

Abstract

Phase-change memory cycling endurance

MRS Bulletin ◽  
2019 ◽  
Vol 44 (09) ◽  
pp. 710-714 ◽  
Author(s):  
SangBum Kim ◽  
Geoffrey W. Burr ◽  
Wanki Kim ◽  
Sung-Wook Nam
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Image Position ◽  
Change Memory

Abstract

Threshold switching via electric field induced crystallization in phase-change memory devices

2012 ◽  
Vol 100 (25) ◽  
pp. 253105 ◽  
Author(s):  
Jorge A. Vázquez Diosdado ◽  
Peter Ashwin ◽  
Krisztian I. Kohary ◽  
C. David Wright
Keyword(s):  
Electric Field ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Threshold Switching ◽  
Induced Crystallization ◽  
Change Memory

scholarly journals Phase-change memory: A continuous multilevel compact model of subthreshold conduction and threshold switching

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FE13 ◽  
Author(s):  
Corentin Pigot ◽  
Fabien Gilibert ◽  
Marina Reyboz ◽  
Marc Bocquet ◽  
Paola Zuliani ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Compact Model ◽  
Threshold Switching ◽  
Change Memory

Threshold switching and phase transition numerical models for phase change memory simulations

2008 ◽  
Vol 103 (11) ◽  
pp. 111101 ◽  
Author(s):  
A. Redaelli ◽  
A. Pirovano ◽  
A. Benvenuti ◽  
A. L. Lacaita
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Numerical Models ◽  
Phase Change Memory ◽  
Threshold Switching ◽  
Change Memory

Thermal analysis of nonvolatile and non rotation phase change memory cell

2003 ◽  
Vol 803 ◽  
Author(s):  
L. P. Shi ◽  
T. C. Chong ◽  
J. M. Li ◽  
H. X. Yang ◽  
J. Q. Mou
Keyword(s):  
Phase Change ◽  
Electric Pulse ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
Flow Characteristics ◽  
Random Access ◽  
Current Density Distribution ◽  
Memory Cell ◽  
Temperature History ◽  
Change Memory

ABSTRACTIn this paper, a three-dimensional finite-element modeling is performed for the analyses of Chalcogenide Random Access Memory (C-RAM), a non-rotation nonvolatile phase change memory cell. The thermal effect generated by an incident electric pulse was mainly discussed. Thermal performances of the cell as a result of electrical and geometrical variations were quantified. Current density distribution, temperature profiles, temperature history, heating rate, cooling rate, and heat flow characteristics were obtained and analyzed. The study is useful for the failure analysis of the C-RAM.

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