Amorphous Silicon, Microcrystalline Silicon, and Thin-Film Polycrystalline Silicon Solar Cells

MRS Bulletin ◽  
2007 ◽  
Vol 32 (3) ◽  
pp. 219-224 ◽  
Author(s):  
Ruud E.I. Schropp ◽  
Reinhard Carius ◽  
Guy Beaucarne

AbstractThin-film solar cell technologies based on Si with a thickness of less than a few micrometers combine the low-cost potential of thin-film technologies with the advantages of Si as an abundantly available element in the earth's crust and a readily manufacturable material for photovoltaics (PVs). In recent years, several technologies have been developed that promise to take the performance of thin-film silicon PVs well beyond that of the currently established amorphous Si PV technology. Thin-film silicon, like no other thin-film material, is very effective in tandem and triple-junction solar cells. The research and development on thin crystalline silicon on foreign substrates can be divided into two different routes: a low-temperature route compatible with standard float glass or even plastic substrates, and a high-temperature route (>600°C). This article reviews the material properties and technological challenges of the different thin-film silicon PV materials.

Author(s):  
Xiaodong Pi ◽  
Zachary Holman ◽  
Uwe Kortshagen

Silicon is the most widely used material in the microelectronics and photovoltaics industry. Currently it is used in one of two forms: as wafers of single- or polycrystalline material or as CVD deposited thin film material. While crystalline silicon solar cells achieve high efficiencies, the silicon wafer contributes significantly to the module cost. Thin film silicon solar cells can be produced at much lower cost, but they also feature lower efficiencies. In this presentation, we discuss an alternate route to forming silicon (Si) or germanium (Ge) thin films from solution on flexible substrates. Silicon (germanium) nanocrystals are formed in a nonthermal plasma. In the plasma environment a Si/Ge precursor is broken down by electron impact, leading to the nucleation and growth of Si or Ge crystals. By adding dopant precursors, p- and n-doped as well as intrinsic crystals can be formed. Organic ligands can be attached in the plasma such that nanocrystals become soluble in organic solvents. These “nanocrystal inks” can be used to form Si or Ge films with ultra-low-cost printing or coating techniques. Film properties of Si/Ge-ink processed films will be discussed. Proof-of-concept demonstrations of solar cells produced from silicon inks will be presented.


2004 ◽  
Vol 451-452 ◽  
pp. 280-284 ◽  
Author(s):  
M. Lejeune ◽  
W. Beyer ◽  
R. Carius ◽  
J. Müller ◽  
B. Rech

2011 ◽  
Vol 1321 ◽  
Author(s):  
Peter Cuony ◽  
Duncan T.L. Alexander ◽  
Linus Löfgren ◽  
Michael Krumrey ◽  
Michael Marending ◽  
...  

ABSTRACTLower absorption, lower refractive index and tunable resistance are three advantages of doped silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to doped microcrystalline silicon, for the use as p- and n-type layers in thin-film silicon solar cells. In this study we show how optical, electrical and microstructural properties of nc-SiOx layers depend on precursor gas ratios and we propose a growth model to explain the phase separation in such films into Si-rich and O-rich regions as visualized by energy-filtered transmission electron microscopy.


1997 ◽  
Vol 485 ◽  
Author(s):  
B. Jagannathan ◽  
W. A. Anderson

AbstractPlasma deposition of thin silicon films with a variable microstructure and controlled interface formation techniques are being developed for thin film silicon/polycrystalline silicon solar cells. Low hydrogen content amorphous (a-Si) or microcrystalline silicon (μ c-Si) films were obtained by controlling the H2 dilution of 2% SiH4/He in a microwave ECR discharge. The films were characterized for structural and electro-optic properties. Junction creation for solar cells was investigated by depositing single or multilayers of the film silicon onto crystalline silicon (c-Si). Effort to improve carrier transport and photovoltaic (PV) properties was pursued through interface modifications effected by varying the microstructure of the layer in contact with the substrate. Cells with 7% conversion efficiency (No A/R) were obtained for an a-Si/c-Si heterojunction configuration. Improved carrier transport and PV properties (9% ef ficient) were achieved by inserting a thin μ c-Si layer in the above structure.


2008 ◽  
Vol 2 (4) ◽  
pp. 157-159 ◽  
Author(s):  
Hongbo Li ◽  
C. H. M. van der Werf ◽  
A. Borreman ◽  
J. K. Rath ◽  
Ruud E. I. Schropp

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