Fabrication of patterned domains with graphitic clusters in amorphous carbon using a combination of ion implantation and electron irradiation techniques

2005 ◽  
Vol 908 ◽  
Author(s):  
Eiji Iwamura ◽  
Tatsuhiko Aizawa
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Amorphous Carbon ◽  
Ion Beam ◽  
Film Surface ◽  
Carbon Films ◽  
Implantation Technique ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Beam Sputtering

AbstractFabrication of domains containing graphitic structures in amorphous carbon (a-C) films was demonstrated. Amorphous carbon thin films with 200 nm thickness were deposited on Si substrates by ion-beam sputtering. Iron atoms in a range from 4×1013 to 3.7×1016 cm-2 were doped to the a-C films by an ion implantation technique through a nickel mask with a grid of square windows of 500×500 μm and a net of 50 μm in width as a template. After removing the metal mask, the partly Fe-containing a-C films were exposed to a low-energy electron shower. In the regions where Fe atoms were implanted, Fe were crystallized and preferably diffused toward the film surface leaving graphitic structures more than 10 nm in size in the interior of the amorphous carbon films. On the other hand, the masked regions, where Fe atoms were not implanted, remained amorphous. The results suggest that regions, which consist of amorphous domains and graphitic domains, can be intentionally arranged in a-C thin films.

AMORPHOUS CARBON THIN FILMS FOR OPTOELECTRIC DEVICE APPLICATION

2000 ◽  
Vol 14 (02n03) ◽  
pp. 206-217 ◽  
Author(s):  
T. SOGA ◽  
T. JIMBO ◽  
K. M. KRISHNA ◽  
M. UMENO
Keyword(s):  
Thin Films ◽  
Amorphous Carbon ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Beam Sputtering ◽  
Photovoltaic Properties ◽  
Deposition Parameters ◽  
Beam Sputtering ◽  
Device Applications ◽  
Carbon Thin Films

Thin films of amorphous carbon (a-C and a-C:H) have been deposited using different carbon precursor materials such as camphor - a natural source, graphite and CH4/H2 mixture by different deposition methods, such as ion beam sputtering, pyrolysis, pulsed laser deposition and r.f. plasma CVD. The films are subjected to various standard characterization techniques in order to tailor the required structural and opto-electrical properties for device applications. The effects of deposition parameters and annealing temperatures on the properties of carbon thin films have been investigated. Both p- and n- type of carbon films have been obtained either through controlling the deposition parameters of a particular method or by doping. Solar cells of various configurations, such as n-C/p-Si, p-C/n-Si and n-C/p-C/p-Si, have been fabricated and their photoresponse characteristics are studied. An efficiency of 1.52% has been obtained, so far, for the cell of configuration n-C/p-C/p-Si. Effects of substrate temperature on the photovoltaic properties are also outlined in brief.

scholarly journals Selection of technologies for metal film application using physical deposition techniques

2020 ◽  
Vol 20 (3) ◽  
pp. 280-288
Author(s):  
S. P. Glushko
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Ion Beam ◽  
Cutting Tools ◽  
High Energy ◽  
Metal Films ◽  
Ion Beam Sputtering ◽  
Wear Resistant Coatings ◽  
Beam Sputtering ◽  
Physical Deposition

Introduction. Obtaining high-quality thin metal films is important for advances in the technologies of applying antifriction and wear-resistant coatings on cutting tools or parts of friction couples. Various techniques of physical film deposition are applied using technologies of cathode (ion), magnetron and ion beam assisted sputtering. The work objective is to analyze, compare and determine the feasibility of techniques for the physical deposition of thin metal films when applying antifriction and wear-resistant coatings on cutting tools or parts of friction couples. Materials and Methods. Technologies of cathode (ionic), magnetron and ion-beam sputtering are considered. Schematic diagrams, conditions and parameters of the considered processes are presented. Results. An advanced technology for the deposition of thin films, alloying and hardening of the surfaces of metal parts is magnetron sputtering. Continuous wave (cw) magnetrons are used to apply coatings of complex composition or multilayer coatings on flat substrates. Ion beam sputtering is considered a slow sputtering of the target surface by bombardment with a high-energy ion beam and deposition on the substrate surface. Under the ion implantation, the surface of metals is doped with recoil atoms, which receive high energy from accelerated ions and move a few nanometers deeper. This enables to obtain ultra-thin doped layers. Low temperature of ion implantation, the possibility of sufficiently accurate control of the depth and the impurity distribution profile, create the prerequisites for the process automation. Wear tracks are more acidified under the same wear conditions on implanted steel compared to non-implanted steel. The nonequilibrium process under ion implantation causes the formation of such alloys in the surface layers that cannot be obtained under normal conditions due to diffusion of components or limited solubility. Ion implantation makes it possible to obtain alloys of a certain composition in the surface layer. Surface properties can be optimized without reference to the bulk properties of the material. Implantation is possible at low temperatures without a noticeable change in the size of the product.Discussion and Conclusion. Cathode (ion), magnetron and ion-beam sputtering have common advantages: due to the relatively low temperature, the substrate does not overheat; it is possible to obtain uniform coatings; the chemical composition of the deposited coatings is accurately reproduced. The rest of the advantages and disadvantages of the considered methods are individual. The results can be used to create thin films through alternating magnetron and then ionbeam deposition processes, which enables to obtain films uniformly modified in depth. This is important in the production of parts of friction couples and cutting tools to improve their quality.

Synthesis of SiC thin films on Si substrates by ion-beam sputtering

2015 ◽  
Vol 9 (2) ◽  
pp. 392-399
Author(s):  
I. K. Beisembetov ◽  
K. Kh. Nusupov ◽  
N. B. Beisenkhanov ◽  
S. K. Zharikov ◽  
B. K. Kenzhaliev ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Beam Sputtering

Deposition and characterization of YBa2Cu3O7−δ thin films grown in situ by sequential ion beam sputtering

1992 ◽  
Vol 7 (8) ◽  
pp. 2003-2016 ◽  
Author(s):  
J.A. Kittl ◽  
W.L. Johnson ◽  
C.W. Nieh
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Film Surface ◽  
Lattice Expansion ◽  
Ion Beam Sputtering ◽  
Orientation Relations ◽  
Deposition Parameters ◽  
Beam Sputtering ◽  
Lattice Distortions

We investigated the in situ growth of YBa2Cu3O7−δ superconducting thin films by a sequential ion beam sputtering technique, studying the relations among deposition parameters, structural and superconducting properties. The films were deposited following the stacking sequence of YBa2Cu3O7−δ, with individual layer thicknesses nominally equal to one monolayer. O2 was supplied during deposition. Predominantly c-axis oriented films were grown on (100) SrTiO3, (100) MgO, and oxidized Si (SiO2/Si) substrates. The microstructure and film-substrate orientation relations were studied by transmission electron microscopy. X-ray studies showed the presence of homogeneous and inhomogeneous strains along the c-direction that persisted after low temperature oxygen anneals. Resistivity measurements showed correlations between the superconducting transition characteristics and the lattice distortions along the c-direction. The effect of deposition parameters on the lattice distortions was investigated, finding that the c-axis lattice parameter was larger in films grown at lower temperatures. This was interpreted in terms of the thermally activated dissociation of O2 at the film surface during growth. We assumed that the c-axis lattice expansion was due to kinetic limitations to the incorporation of oxygen into the film during growth. This led to a consistent description of the results obtained in this work and the O2 pressure dependence of the c-axis lattice expansion reported for other in situ techniques. Studies were performed on films grown by this technique as well as on films grown in situ by magnetron sputtering in an attempt to elucidate the nature of the defect structure causing the c-axis lattice distortions.

Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates.

2002 ◽  
Vol 747 ◽  
Author(s):  
N. A. Suvorova ◽  
A. H. Mueller ◽  
A. A. Suvorova ◽  
M. Saunders ◽  
E. A. Irene
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
High Resolution Electron Microscopy ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Resolution Electron ◽  
Capacitance Voltage ◽  
Beam Sputtering ◽  
Order Of Magnitude ◽  
Rf Sputter Deposition

ABSTRACT(Ba,Sr)TiO3 (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si. Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO2 layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO2 films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density Dit of an order of magnitude was observed for oxidized Si substrates.

Spectroscopic studies of nitrogenated amorphous carbon films prepared by ion beam sputtering

2002 ◽  
Vol 91 (8) ◽  
pp. 4944-4955 ◽  
Author(s):  
Debajyoti Das ◽  
K. H. Chen ◽  
S. Chattopadhyay ◽  
L. C. Chen
Keyword(s):  
Amorphous Carbon ◽  
Ion Beam ◽  
Spectroscopic Studies ◽  
Carbon Films ◽  
Ion Beam Sputtering ◽  
Amorphous Carbon Films ◽  
Beam Sputtering
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