Deposition and characterization of YBa2Cu3O7−δ thin films grown in situ by sequential ion beam sputtering

1992 ◽  
Vol 7 (8) ◽  
pp. 2003-2016 ◽  
Author(s):  
J.A. Kittl ◽  
W.L. Johnson ◽  
C.W. Nieh
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Film Surface ◽  
Lattice Expansion ◽  
Ion Beam Sputtering ◽  
Orientation Relations ◽  
Deposition Parameters ◽  
Beam Sputtering ◽  
Lattice Distortions

We investigated the in situ growth of YBa2Cu3O7−δ superconducting thin films by a sequential ion beam sputtering technique, studying the relations among deposition parameters, structural and superconducting properties. The films were deposited following the stacking sequence of YBa2Cu3O7−δ, with individual layer thicknesses nominally equal to one monolayer. O2 was supplied during deposition. Predominantly c-axis oriented films were grown on (100) SrTiO3, (100) MgO, and oxidized Si (SiO2/Si) substrates. The microstructure and film-substrate orientation relations were studied by transmission electron microscopy. X-ray studies showed the presence of homogeneous and inhomogeneous strains along the c-direction that persisted after low temperature oxygen anneals. Resistivity measurements showed correlations between the superconducting transition characteristics and the lattice distortions along the c-direction. The effect of deposition parameters on the lattice distortions was investigated, finding that the c-axis lattice parameter was larger in films grown at lower temperatures. This was interpreted in terms of the thermally activated dissociation of O2 at the film surface during growth. We assumed that the c-axis lattice expansion was due to kinetic limitations to the incorporation of oxygen into the film during growth. This led to a consistent description of the results obtained in this work and the O2 pressure dependence of the c-axis lattice expansion reported for other in situ techniques. Studies were performed on films grown by this technique as well as on films grown in situ by magnetron sputtering in an attempt to elucidate the nature of the defect structure causing the c-axis lattice distortions.

In situ preparation of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-x/ thin films deposited by ion beam sputtering: preliminary results

1991 ◽  
Vol 27 (2) ◽  
pp. 2522-2524 ◽  
Author(s):  
S. Barbanera ◽  
F. Murtas ◽  
L. Scopa ◽  
V. Boffa ◽  
G. Paterno ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Preliminary Results ◽  
In Situ Preparation ◽  
Beam Sputtering

In-Situ Real-Time Ellipsometry Study of Dynamic Processes of YBa2Cu3O7−x Thin Films

1999 ◽  
Vol 569 ◽  
Author(s):  
Y. Gao ◽  
A.H. Mueller ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Ion Beam ◽  
Oxygen Deficiency ◽  
Ion Beam Sputtering ◽  
Optical Absorption Peak ◽  
Beam Sputtering ◽  
Effect Of Oxygen ◽  
Deposited Films

ABSTRACTThe optical absorption peak at 4. leV associated with oxygen deficiency in YBa2Cu3O7−x thin films was monitored by spectroscopic ellipsometry (SE) in real time during the growth process. Two regimes dominated by oxygen out- and in-diffusion have been observed during deposition by ion beam sputtering at 700°C.The effect of oxygen partial pressure during the post-deposition cooling process on the oxidation of deposited films has also been investigated. The thermodynamic stability of the grown films was examined by real time SE during post annealing process. In-situ SE measurements have been performed to obtain the dielectric function of oxygen deficient YBa2Cu3O6 films in the temperature range from 27°C to 700°C. It has been demonstrated that real time SE is a sensitive and useful technique for in-situ diagnostics of the dynamics of YBa2Cu3O7−x thin film processes.

Influence of ion-beam sputtering deposition parameters on highly photosensitive and transparent CdZnO thin films

2014 ◽  
Vol 49 (20) ◽  
pp. 6917-6929 ◽  
Author(s):  
Shruti Verma ◽  
Sushil Kumar Pandey ◽  
Mukul Gupta ◽  
Shaibal Mukherjee
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Deposition Parameters ◽  
Beam Sputtering

In situ growth of superconducting YBaCuO thin films by ion-beam sputtering method

1993 ◽  
Vol 21 (1) ◽  
pp. 5-9 ◽  
Author(s):  
A.V. Bagulya ◽  
I.P. Kazakov ◽  
M.A. Negodaev ◽  
V.I. Tsekhosh ◽  
V.V. Voronov
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
In Situ Growth ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Fabrication of patterned domains with graphitic clusters in amorphous carbon using a combination of ion implantation and electron irradiation techniques

2005 ◽  
Vol 908 ◽  
Author(s):  
Eiji Iwamura ◽  
Tatsuhiko Aizawa
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Amorphous Carbon ◽  
Ion Beam ◽  
Film Surface ◽  
Carbon Films ◽  
Implantation Technique ◽  
Ion Beam Sputtering ◽  
Si Substrates ◽  
Beam Sputtering

AbstractFabrication of domains containing graphitic structures in amorphous carbon (a-C) films was demonstrated. Amorphous carbon thin films with 200 nm thickness were deposited on Si substrates by ion-beam sputtering. Iron atoms in a range from 4×1013 to 3.7×1016 cm-2 were doped to the a-C films by an ion implantation technique through a nickel mask with a grid of square windows of 500×500 μm and a net of 50 μm in width as a template. After removing the metal mask, the partly Fe-containing a-C films were exposed to a low-energy electron shower. In the regions where Fe atoms were implanted, Fe were crystallized and preferably diffused toward the film surface leaving graphitic structures more than 10 nm in size in the interior of the amorphous carbon films. On the other hand, the masked regions, where Fe atoms were not implanted, remained amorphous. The results suggest that regions, which consist of amorphous domains and graphitic domains, can be intentionally arranged in a-C thin films.

In situ grown YBa2Cu3O7−δ thin films by sequential ion beam sputtering

1990 ◽  
Vol 9 (9) ◽  
pp. 336-338 ◽  
Author(s):  
J.A. Kittl ◽  
C.W. Nieh ◽  
D.S. Lee ◽  
W.L. Johnson
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Ion beam sputter deposition of YBa2Cu3O7−δ thin films

1993 ◽  
Vol 8 (12) ◽  
pp. 3032-3042 ◽  
Author(s):  
B.J. Kellett ◽  
J.H. James
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
High Oxygen ◽  
Ion Beam Sputtering ◽  
Film Properties ◽  
High Oxygen Partial Pressure ◽  
Beam Sputtering

This article addresses issues associated with in situ growth of superconducting YBa2Cu3O7−δ thin films by ion beam sputtering. High oxygen partial pressure during ion beam deposition can cause significant beam broadening and oxidation of filaments and grids. Also, many of the targets used for processing YBCO are unstable when sputtered in a high oxygen partial pressure. It is shown that ion beam sputtering can produce YBCO films of comparable quality to those produced by laser ablation or dc magnetron sputtering. Typical film properties are Tco = 91 K and Jc (77 K) = 106 A cm−2. It appears that the oxygen gas pressure during the postdeposition cooldown has a more important influence on film properties than the oxygen partial pressure during deposition.

Preparation and Gas Addition of Soft Magnetic Pure Iron Thin Film by Dual Ion Beam Sputtering

1986 ◽  
Vol 80 ◽  
Author(s):  
M. Nagakubo ◽  
A. Kawano ◽  
M. Naoe
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Pure Iron ◽  
Ion Beam ◽  
Film Surface ◽  
Iron Film ◽  
Ion Beam Sputtering ◽  
Soft Magnetic ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

AbstractPure iron thin films with soft magnetic properties and good chemical stabilities have been prepared by Dual Ion Beam Sputtering (DIBS). Four kinds of gas, that is, hydrogen, helium, nitrogen and argon were introduced respectively to the auxiliary ion source as the additional element in the film and also for the purpose of bombardment during deposition. The dependence of crystal structure and magnetic properties of the films on the preparation condition, especially, on the effect of various gases added in the films by ion bombardment onto the depositing film surface, has been investigated.Saturation magnetization 4πMs of iron film including gas atoms is usually smaller than that of bulk iron which has 4πMs of 21.5kG. For example, 4πMs of the film prepared by conventional planer magnetron sputtering remains about 15kG. Such a remarkable difference in 4πMs may be primarily attributed to the considerable amount of argon atoms included in the film due to argon pressure as high as 10mTorr. It may be also caused by high energy particles bombarding onto the iron film surface during deposition. On the other hand, pure iron thin films prepared by Dual Ion Beam Sputtering can have 47Ms as high as 21.5kG, and coercive force Hc as low as about 4 Oe by controlling the ratio of sputtering iron atoms to argon gas atoms, impinging onto the substrate, and the arrival energies both of them. Magnetic properties and crystal structures of the iron thin films depend significantly on the kind of added gas. In this study, it has been found that bombardment and addition of adequate gas atoms with proper energy results in an improvement of atomic ordering and microscopic uniformity in the films.

Superconducting Yba2Cu3O7-δ Thin Films on Srtio3 and Si Grown In-Situ by Ion Beam Sputtering

1989 ◽  
Vol 169 ◽  
Author(s):  
B.J. Kellett ◽  
J.H. James ◽  
A. Gauzzi ◽  
M. Affronte ◽  
D. Pavuna
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Ion Beam ◽  
Buffer Layers ◽  
Ion Beam Sputtering ◽  
Ybco Films ◽  
Beam Sputtering ◽  
Uniform Composition

AbstractSuperconducting YBa2Cu3O7‐δ (YBCO) films 100‐300nm thick have been grown in‐situ on (100) SrTiO3 at 650°C by ion beam sputtering. Targets of Cu, CuO, Y, Y2O3, BaF2, BaCO3 and YBa2Cu3O7‐δ have been studied. Uniform composition throughout the film thickness has been achieved by co‐sputtering. Films are metallic (p300=300μΩcm) and textured, with Tc onsets at 92K and Tco=82K. Jc(77K) exceeds 105 Acm‐2. Films grown in‐situ on Si with ZrOx/Y2O3 and In2O3(10 at.%SnO2) buffer layers show Tc onsets at about 90K and Tco at about 50K, annealing improves Tco to 60K with resistivities p30o=2000μΩcm and 4000μΩcm respectively.

Characterization of KNbO3 Thin Films Deposited by Ion Beam Sputtering using a Computer-Controlled Rotating Target Holder

1989 ◽  
Vol 152 ◽  
Author(s):  
M. S. Ameen ◽  
T. M. Graettinger ◽  
O. Auciello ◽  
S. H. Rou ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Target Holder ◽  
Crystal Resonator ◽  
Deposition Parameters ◽  
Beam Sputtering ◽  
Computer Controlled ◽  
Strong Candidate

ABSTRACTKNbO3 is a strong candidate as a material for use as channel waveguides due to a high electrooptic figure of merit. High quality single crystals are difficult to obtain due to incongruent melting of the compound. Control of cation concentration and oxygen incorporation are problems encountered in current thin film processing routes.In order to overcome the problems discussed above, an ion beam deposition system featuring a computer-controlled rotatable target holder and quartz crystal resonator (QCR) feedback loop has been developed. Multicomponent films are produced via sputtering from elemental or compound targets sequentially exposed to an ion beam. Initial results are presented on the use of this new technique for the deposition of KNbO3. Pressed KNbO3, Nb2O5, and KO2 powders were used as sputtering targets. By varying the programmed thickness of deposited film from each target being sputtered, the ratio of K:Nb could be reproducibly controlled. The variation in sticking coefficients due to substrate temperature was also compensated for in this manner.Thin films were analyzed by X-ray diffraction and TEM to determine phases present and film microstructure. Film morphology and composition has been studied as a function of substrate temperature, layer thickness, and ion beam process parameters. The relation between deposition parameters and film characteristics are discussed.

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