Epitaxial Growth of C60 Thin Films using Continuous-wave Laser Molecular Beam Epitaxy

2006 ◽  
Vol 965 ◽  
Author(s):  
Seiichiro Yaginuma ◽  
Kenji Itaka ◽  
Masamitsu Haemori ◽  
Masao Katayama ◽  
Yuji Matsumoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Continuous Wave ◽  
High Energy ◽  
Imaging Plate ◽  
Continuous Wave Laser ◽  
Laser Molecular Beam Epitaxy ◽  
Wave Laser

ABSTRACTWe have fabricated C60 thin films on various substrates (mica, MoS2, HOPG, LiF, NaCl, KBr, KCl and CaF2) by using continuous-wave laser molecular beam epitaxy (CWL-MBE), which is very suitable technique to grow epitaxial organic thin films because of good controllability of evaporation as compared with Knudsen-cell method. The films were evaluated by reflection high-energy electron diffraction with micro channel imaging plate (MCP-RHEED) and atomic force microscopy (AFM). AFM images of the C60 films on mica, MoS2 and HOPG substrates show flat and homogeneous, morphology, and epitaxial growth of the films on mica and MoS2 substrates were observed by RHEED. This result shows mica, MoS2, HOPG substrates are good candidates for epitaxial growth of C60 thin films.

Composition-spread thin films of pentacene and 6,13-pentacenequinone fabricated by using continuous-wave laser molecular beam epitaxy

2008 ◽  
Vol 254 (8) ◽  
pp. 2336-2341 ◽  
Author(s):  
Seiichiro Yaginuma ◽  
Kenji Itaka ◽  
Yuji Matsumoto ◽  
Tsuyoshi Ohnishi ◽  
Mikk Lippmaa ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Continuous Wave ◽  
Continuous Wave Laser ◽  
Laser Molecular Beam Epitaxy ◽  
Wave Laser

Unit-Cell by Unit-Cell Epitaxial Growth of SrTiO 3 and BaTiO 3 Thin Films by Laser Molecular Beam Epitaxy

1997 ◽  
Vol 14 (6) ◽  
pp. 478-480 ◽  
Author(s):  
Yang Guo-zhen ◽  
Lü Hui-bin ◽  
Wang Hui-sheng ◽  
Cui Da-fu ◽  
Yang Hai-qing ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Unit Cell ◽  
Laser Molecular Beam Epitaxy

Atomic scale epitaxial growth of BaTiO3 thin films by laser molecular beam epitaxy

1997 ◽  
Vol 40 (5) ◽  
pp. 522-527 ◽  
Author(s):  
Huisheng Wang ◽  
Kun Ma ◽  
Yanwei Liu ◽  
Zhiqiang Peng ◽  
Dafu Cui ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Scale ◽  
Laser Molecular Beam Epitaxy

Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy

1999 ◽  
Vol 567 ◽  
Author(s):  
Z. Yu ◽  
R. Droopad ◽  
J. Ramdani ◽  
J.A. Curless ◽  
C.D. Overgaard ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
State Density ◽  
Unit Cell ◽  
Ex Situ ◽  
Silicon Oxide Layer ◽  
Single Crystalline ◽  
X Ray

ABSTRACTSingle crystalline perovskite oxides such as SrTiO3 (STO) are highly desirable for future generation ULSI applications. Over the past three decades, development of crystalline oxides on silicon has been a great technological challenge as an amorphous silicon oxide layer forms readily on the Si surface when exposed to oxygen preventing the intended oxide heteroepitaxy on Si substrate. Recently, we have successfully grown epitaxial STO thin films on Si(001) surface by using molecular beam epitaxy (MBE) method. Properties of the STO films on Si have been characterized using a variety of techniques including in-situ reflection high energy electron diffraction (RHEED), ex-situ X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). The STO films grown on Si(001) substrate show bright and streaky RHEED patterns indicating coherent two-dimensional epitaxial oxide film growth with its unit cell rotated 450 with respect to the underlying Si unit cell. RHEED and XRD data confirm the single crystalline nature and (001) orientation of the STO films. An X-ray pole figure indicates the in-plane orientation relationship as STO[100]//Si[110] and STO(001)// Si(001). The STO surface is atomically smooth with AFM rms roughness of 1.2 AÅ. The leakage current density is measured to be in the low 10−9 A/cm2 range at 1 V, after a brief post-growth anneal in O2. An interface state density Dit = 4.6 × 1011 eV−1 cm−2 is inferred from the high-frequency and quasi-static C-V characteristics. The effective oxide thickness for a 200 Å STO film is around 30 Å and is not sensitive to post-growth anneal in O2 at 500-700°C. These STO films are also robust against forming gas anneal. Finally, STO MOSFET structures have been fabricated and tested. An extrinsic carrier mobility value of 66 cm2 V−11 s−1 is obtained for an STO PMOS device with a 2 μm effective gate length.

Epitaxial Growth of Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Technique with Shutter Control

1989 ◽  
Vol 28 (Part 2, No. 10) ◽  
pp. L1809-L1811 ◽  
Author(s):  
Yoshimi Nakayama ◽  
Ichiro Tsukada ◽  
Atsutaka Maeda ◽  
Kunimitsu Uchinokura
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam

Highly conductive Nb doped SrTiO3 epitaxial thin films grown by laser molecular beam epitaxy

2000 ◽  
Vol 212 (3-4) ◽  
pp. 451-455 ◽  
Author(s):  
Tong Zhao ◽  
Huibin Lu ◽  
Fan Chen ◽  
Shouyu Dai ◽  
Guozhen Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Thin Films ◽  
Laser Molecular Beam Epitaxy
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