Epitaxial Growth of Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy Technique with Shutter Control

AbstractEpitaxial growth of thin films, alloys, and multilayers from the Cu-Ni system are being explored as a means of fabricating a substrate to lattice match diamond. These single crystal films are superior to commercially available substrate material. Due to the high reactivity of the metal surfaces in atmosphere, all processing must be done under UHV conditions. In vacuo preparation, growth, and analysis of the metals is described.

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Epitaxial growth and magnetic characterization of ferromagnetic Co4N thin films on SrTiO3(001) substrates by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2011.09.038 ◽

2011 ◽

Vol 336 (1) ◽

pp. 40-43 ◽

Cited By ~ 30

Author(s):

Keita Ito ◽

Kazunori Harada ◽

Kaoru Toko ◽

Hiro Akinaga ◽

Takashi Suemasu

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Magnetic Characterization

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Defect Formation during Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on 6H-Silicon Carbide by Gas-Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.1641 ◽

1996 ◽

Vol 35 (Part 1, No. 3) ◽

pp. 1641-1647 ◽

Cited By ~ 33

Author(s):

Satoru Tanaka ◽

R. Scott Kern ◽

James Bentley ◽

Robert F. Davis

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Molecular Beam Epitaxy ◽

Aluminum Nitride ◽

Epitaxial Growth ◽

Molecular Beam ◽

Defect Formation ◽

Gas Source

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Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

10.20944/preprints202107.0325.v1 ◽

2021 ◽

Author(s):

B. Riah ◽

Julien Camus ◽

Abdelhak Ayad ◽

Mohammad Rammal ◽

Raouia Zernadji ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Aluminum Nitride ◽

Magnetron Sputtering ◽

Epitaxial Growth ◽

Buffer Layer ◽

Molecular Beam ◽

Dc Magnetron Sputtering ◽

Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

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Epitaxial growth of gallium nitride thin films on A-Plane sapphire by molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.369718 ◽

1999 ◽

Vol 85 (7) ◽

pp. 3582-3589 ◽

Cited By ~ 59

Author(s):

D. Doppalapudi ◽

E. Iliopoulos ◽

S. N. Basu ◽

T. D. Moustakas

Keyword(s):

Thin Films ◽

Gallium Nitride ◽

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam

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Epitaxial Growth of C60 Thin Films using Continuous-wave Laser Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-0965-s14-06 ◽

2006 ◽

Vol 965 ◽

Author(s):

Seiichiro Yaginuma ◽

Kenji Itaka ◽

Masamitsu Haemori ◽

Masao Katayama ◽

Yuji Matsumoto ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Continuous Wave ◽

High Energy ◽

Imaging Plate ◽

Continuous Wave Laser ◽

Laser Molecular Beam Epitaxy ◽

Wave Laser

ABSTRACTWe have fabricated C60 thin films on various substrates (mica, MoS2, HOPG, LiF, NaCl, KBr, KCl and CaF2) by using continuous-wave laser molecular beam epitaxy (CWL-MBE), which is very suitable technique to grow epitaxial organic thin films because of good controllability of evaporation as compared with Knudsen-cell method. The films were evaluated by reflection high-energy electron diffraction with micro channel imaging plate (MCP-RHEED) and atomic force microscopy (AFM). AFM images of the C60 films on mica, MoS2 and HOPG substrates show flat and homogeneous, morphology, and epitaxial growth of the films on mica and MoS2 substrates were observed by RHEED. This result shows mica, MoS2, HOPG substrates are good candidates for epitaxial growth of C60 thin films.

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