Reduction in the Effective Barrier Height in Ptsi-P-Si Schottky Diodes by Using Low Energy Ion Implantation

1981 ◽  
Vol 10 ◽  
Author(s):  
C.-Y. Wei ◽  
W. Tantraporn ◽  
W. Katz ◽  
G. Smith
Keyword(s):  
Ion Implantation ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Low Energy ◽  
Si Substrate ◽  
Effective Barrier Height ◽  
Effective Barrier

A reduction in the effective barrier height in a PtSi-p-Si Schottky diode was achieved using low energy ion implantation to introduce a shallow p+ layer on a p-Si substrate. After the Schottky diode had been implanted with 3 keV 11B+ ions to a dose of 4 × 1012 ions cm−2, the barrier height was observed to decrease from 0.26 to 0.16eV. The reduction in barrier height correlated well with the boronconcentration found at or near the PtSi-Si interface.

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes

2005 ◽  
Vol 49 (4) ◽  
pp. 606-611 ◽  
Author(s):  
Guo-Ping Ru ◽  
R.L. Van Meirhaeghe ◽  
S. Forment ◽  
Yu-Long Jiang ◽  
Xin-Ping Qu ◽  
...  
Keyword(s):  
Barrier Height ◽  
Voltage Dependence ◽  
Schottky Diodes ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Height Reduction

Effect of thermionic‐field emission on effective barrier height lowering in In0.52Al0.48As Schottky diodes

1993 ◽  
Vol 62 (16) ◽  
pp. 1964-1966 ◽  
Author(s):  
Yasunari Umemoto ◽  
William J. Schaff ◽  
Hyunchang Park ◽  
Lester F. Eastman
Keyword(s):  
Barrier Height ◽  
Field Emission ◽  
Schottky Diodes ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Thermionic Field Emission

scholarly journals Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer

2015 ◽  
Vol 33 (3) ◽  
pp. 593-600 ◽  
Author(s):  
Ömer Güllü ◽  
Abdulmecit Türüt
Keyword(s):  
Barrier Height ◽  
Space Charge Region ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Semiconductor Wafer ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Electronic Parameters ◽  
Interfacial Potential ◽  
Thin Interlayer

Abstract In this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a n- lP semiconductor wafer with a biopolymer DNA. The Cu/DNA/n-InP contact showed a good rectifying behavior. The ideality factor value of 1.08 and the barrier height (Φb) value of 0.70 eV for the Cu/DNA/n-InP device were determined from the forward ias I-V characteristics. It was seen that the Φb value of 0.70 eV obtained for the Cu/DNA/n-InP contact was significantly larger tan the value of 0.48 eV of conventional Cu/n-InP Schottky diodes. Modification of the interfacial potential barrier of Cu/n-InP iode was achieved using a thin interlayer of DNA biopolymer. This was attributed to the fact that DNA biopolymer interlayer increased the effective barrier height by influencing the space charge region of InP.

Quantum mechanical tunnelling: the missing term to achieve sub-kJ mol−1 barrier heights

2021 ◽  
Author(s):  
Sebastian Kozuch ◽  
Tim Schleif ◽  
Amir Karton
Keyword(s):  
Barrier Height ◽  
Quantum Mechanical ◽  
Effective Barrier Height ◽  
Quantum Tunnelling ◽  
Barrier Heights ◽  
Effective Barrier

Quantum tunnelling can lower the effective barrier height, creating a discrepancy between experiment and theory.

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