Effect of axial coordination environment on quantum tunnelling magnetization for dysprosium single ion magnet with theoretical insight

Herein, we report two mononuclear Dysprosium complexes [Dy(H4L){B(OMe)2(Ph)2}2](Cl)∙MeOH (1), and [Dy(H4L){MeOH)2(NCS)2](Cl) (2) (where H4L = 2,2′-(pyridine-2,6-diylbis(ethan-1-yl-1-ylidene))bis(N-phenylhydrazinecarboxamide) with different axial coordination environment. The structural analysis revealed that the pentadentate H4L ligand...

New Interpretations of The State Function of An Elementary Particle Based On The Origin of Quantum Probability

The theoretical results of quantum mechanics (QM) have been verified by experiments, but the probabilistic Copenhagen interpretation is still controversial, and many counterintuitive phenomena are still difficult to understand. To trace the origin of probability in QM, we construct the state function of a multiparticle quantum objective system and find that the probability in QM originates from the particle number distribution rate in a unit volume near position r at time t in the multiparticle quantum objective system. Based on the origin of probability, We find that the state function of the particle has precise physical meaning; that is, the particle periodically and alternately exhibits the particle state and wave state in time and space, obtain the localized and nonlocalized spatiotemporal range of the particle, the apparent trajectory of the particle motion. Based on this, through rigorous mathematical derivation and analysis, we propose new physical interpretations of the quantum superposition state, wave-particle duality, the double-slit experiment, the Heisenberg uncertainty principle, and the quantum tunnelling effect, and these interpretations are physically logical and not counterintuitive.

Origin of Probability in Quantum Mechanics and the Physical Interpretation of the Wave Function

The theoretical results of quantum mechanics (QM) have been verified by experiments, but the probabilistic Copenhagen interpretation is still controversial, and many counterintuitive phenomena are still difficult to understand. To trace the origin of probability in QM, we construct the state function of a multiparticle quantum objective system and find that the probability in QM originates from the particle number distribution rate in a unit volume near position r at time t in the multiparticle quantum objective system. Based on the origin of probability, We find that the state function of the particle has precise physical meaning; that is, the particle periodically and alternately exhibits the particle state and wave state in time and space, obtain the localized and nonlocalized spatiotemporal range of the particle, the apparent trajectory of the particle motion. Based on this, through rigorous mathematical derivation and analysis, we propose new physical interpretations of the quantum superposition state, wave-particle duality, the double-slit experiment, the Heisenberg uncertainty principle, and the quantum tunnelling effect, and these interpretations are physically logical and not counterintuitive.

Quantum Tunnelling based Ultra-compact and Energy Efficient Spiking Neuron enables Hardware Liquid State Machine

Low-power and low-area neurons are essential for hardware implementation of large-scale SNNs. Various novel physics based leaky-integrate-and-fire (LIF) neuron architectures have been proposed with low power and area, but are not compatible with CMOS technology to enable brain scale implementation of SNN. In this paper, for the first time, we demonstrate hardware implementation of LSM reservoir using band-to-band-tunnelling (BTBT) based neuron. A low-power thresholding circuit and current-to-voltage converter design are proposed. We further propose a predistortion technique to linearize a nonlinear neuron without any area and power overhead. We establish the equivalence of the proposed neuron with the ideal LIF neuron to demonstrate its versatility. To verify the effect of the proposed neuron, a 36-neuron LSM reservoir is fabricated in GF-45nm PDSOI technology. We achieved 5000x lower energy-per-spike at a similar area, 50x less area at a similar energy-per-spike, and 10x lower standby power at a similar area and energy-per-spike. Such overall performance improvement enables brain scale computing.

Electronic Conduction in Disordered Carbon Materials

<p>Graphene, consisting of a single layer of carbon atoms, is being widely studied for its interesting fundamental physics and potential applications. The presence and extent of disorder play important roles in determining the electronic conduction mechanism of a conducting material. This thesis presents work on data analysis and modelling of electronic transport mechanisms in disordered carbon materials such as graphene. Based on experimental data of conductance of partially disordered graphene as measured by Gómez-Navarro et al., we propose a model of variable-range hopping (VRH) – defined as quantum tunnelling of charge carriers between localized states – consisting of a crossover from the two-dimensional (2D) electric field-assisted, temperature-driven (Pollak-Riess) VRH to 2D electric field-driven (Skhlovskii) VRH. The novelty of our model is that the temperature-dependent and field-dependent regimes of VRH are unified by a smooth crossover where the slopes of the curves equal at a given temperature. We then derive an analytical expression which allows exact numerical calculation of the crossover fields or voltages. We further extend our crossover model to apply to disordered carbon materials of dimensionalities other than two, namely to the 3D self-assembled carbon networks by Govor et al. and quasi-1D highly-doped conducting polymers by Wang et al. Thus we illustrate the wide applicability of our crossover model to disordered carbon materials of various dimensionalities. We further predict, in analogy to the work of Pollak and Riess, a temperature-assisted, field-driven VRH which aims to extend the field-driven expression of Shklovskii to cases wherein the temperatures are increased. We discover that such an expression gives a good fit to the data until certain limits wherein the temperatures are too high or the applied field too low. In such cases the electronic transport mechanism crosses over to Mott VRH, as expected and analogous to our crossover model described in the previous paragraph. The second part of this thesis details a systematic data analysis and modelling of experimental data of conductance of single-wall carbon nanotube (SWNT) networks prepared by several different chemical-vapour deposition (CVD) methods by Ansaldo et al. and Lima et al. Based on our analysis, we identify and categorize the SWNT networks based on their electronic conduction mechanisms, using various theoretical models which are temperature-dependent and field-dependent. The electronic transport mechanisms of the SWNT networks can be classed into either VRH in one- and two-dimensions or fluctuation-assisted tunnelling (FAT, i.e. interrupted metallic conduction), some with additional resistance from scattering by lattice vibrations. Most notably, for a selected network, we find further evidence for our novel VRH crossover model previously described. We further correlate the electronic transport mechanisms with the morphology of each network based on scanning electron microscopy (SEM) images. We find that SWNT networks which consist of very dense tubes show conduction behaviour consistent with the FAT model, in that they retain a finite and significant fraction of room-temperature conductance as temperatures tend toward absolute zero. On the other hand, SWNT networks which are relatively sparser show conduction behaviour consistent with the VRH model, in that conductance tends to zero as temperatures tend toward absolute zero. We complete our analysis by estimating the average hopping distance for SWNT networks exhibiting VRH conduction, and estimate an indication of the strength of barrier energies and quantum tunnelling for SWNT networks exhibiting FAT conduction.</p>

Electronic Conduction in Disordered Carbon Materials

<p>Graphene, consisting of a single layer of carbon atoms, is being widely studied for its interesting fundamental physics and potential applications. The presence and extent of disorder play important roles in determining the electronic conduction mechanism of a conducting material. This thesis presents work on data analysis and modelling of electronic transport mechanisms in disordered carbon materials such as graphene. Based on experimental data of conductance of partially disordered graphene as measured by Gómez-Navarro et al., we propose a model of variable-range hopping (VRH) – defined as quantum tunnelling of charge carriers between localized states – consisting of a crossover from the two-dimensional (2D) electric field-assisted, temperature-driven (Pollak-Riess) VRH to 2D electric field-driven (Skhlovskii) VRH. The novelty of our model is that the temperature-dependent and field-dependent regimes of VRH are unified by a smooth crossover where the slopes of the curves equal at a given temperature. We then derive an analytical expression which allows exact numerical calculation of the crossover fields or voltages. We further extend our crossover model to apply to disordered carbon materials of dimensionalities other than two, namely to the 3D self-assembled carbon networks by Govor et al. and quasi-1D highly-doped conducting polymers by Wang et al. Thus we illustrate the wide applicability of our crossover model to disordered carbon materials of various dimensionalities. We further predict, in analogy to the work of Pollak and Riess, a temperature-assisted, field-driven VRH which aims to extend the field-driven expression of Shklovskii to cases wherein the temperatures are increased. We discover that such an expression gives a good fit to the data until certain limits wherein the temperatures are too high or the applied field too low. In such cases the electronic transport mechanism crosses over to Mott VRH, as expected and analogous to our crossover model described in the previous paragraph. The second part of this thesis details a systematic data analysis and modelling of experimental data of conductance of single-wall carbon nanotube (SWNT) networks prepared by several different chemical-vapour deposition (CVD) methods by Ansaldo et al. and Lima et al. Based on our analysis, we identify and categorize the SWNT networks based on their electronic conduction mechanisms, using various theoretical models which are temperature-dependent and field-dependent. The electronic transport mechanisms of the SWNT networks can be classed into either VRH in one- and two-dimensions or fluctuation-assisted tunnelling (FAT, i.e. interrupted metallic conduction), some with additional resistance from scattering by lattice vibrations. Most notably, for a selected network, we find further evidence for our novel VRH crossover model previously described. We further correlate the electronic transport mechanisms with the morphology of each network based on scanning electron microscopy (SEM) images. We find that SWNT networks which consist of very dense tubes show conduction behaviour consistent with the FAT model, in that they retain a finite and significant fraction of room-temperature conductance as temperatures tend toward absolute zero. On the other hand, SWNT networks which are relatively sparser show conduction behaviour consistent with the VRH model, in that conductance tends to zero as temperatures tend toward absolute zero. We complete our analysis by estimating the average hopping distance for SWNT networks exhibiting VRH conduction, and estimate an indication of the strength of barrier energies and quantum tunnelling for SWNT networks exhibiting FAT conduction.</p>

Electronic Transport Mechanisms Correlated to Structural Properties of a Reduced Graphene Oxide Sponge

We report morpho-structural properties and charge conduction mechanisms of a foamy “graphene sponge”, having a density as low as ≈0.07 kg/m3 and a carbon to oxygen ratio C:O ≃ 13:1. The spongy texture analysed by scanning electron microscopy is made of irregularly-shaped millimetres-sized small flakes, containing small crystallites with a typical size of ≃16.3 nm. A defect density as high as ≃2.6 × 1011 cm−2 has been estimated by the Raman intensity of D and G peaks, dominating the spectrum from room temperature down to ≃153 K. Despite the high C:O ratio, the graphene sponge exhibits an insulating electrical behavior, with a raise of the resistance value at ≃6 K up to 5 orders of magnitude with respect to the room temperature value. A variable range hopping (VRH) conduction, with a strong 2D character, dominates the charge carriers transport, from 300 K down to 20 K. At T < 20 K, graphene sponge resistance tends to saturate, suggesting a temperature-independent quantum tunnelling. The 2D-VRH conduction originates from structural disorder and is consistent with hopping of charge carriers between sp2 defects in the plane, where sp3 clusters related to oxygen functional groups act as potential barriers.

Electronic Transport Mechanisms Correlated to Structural Properties of a Reduced Graphene Oxide Sponge

We report morpho-structural properties and charge conduction mechanisms of a foamy &ldquo;graphene sponge&rdquo;, having a density as low as &asymp; 0.07 kg/m3 and a carbon to oxygen ratio C:O ≃ 13:1. The spongy texture analysed by scanning electron microscopy is made of irregularly-shaped millimetres-sized small flakes, containing small crystallites with a typical size of ≃ 16.3 nm. A defect density as high as ≃ 2.6&times;1011 cm&minus;2 has been estimated by the Raman intensity of D and G peaks, dominating the spectrum from room temperature down to ≃ 153 K. Despite the high C:O ratio, the graphene sponge exhibits an insulating electrical behavior, with a raise of the resistance value at ≃ 6 K up to 5 orders of magnitude with respect to the room temperature value. A variable range hopping (VRH) conduction, with a strong 2D character, dominates the charge carriers transport, from 300 K down to 20 K. At T&amp;lt; 20 K, graphene sponge resistance tends to saturate, suggesting a temperature-independent quantum tunnelling. The 2D-VRH conduction originates from structural disorder and is consistent with hopping of charge carriers between sp2 defects in the plane, where sp3 clusters related to oxygen functional groups act as potential barriers.

4D-imaging of drip-line radioactivity by detecting proton emission from 54mNi pictured with ACTAR TPC

Proton radioactivity was discovered exactly 50 years ago. First, this nuclear decay mode sets the limit of existence on the nuclear landscape on the neutron-deficient side. Second, it comprises fundamental aspects of both quantum tunnelling as well as the coupling of (quasi)bound quantum states with the continuum in mesoscopic systems such as the atomic nucleus. Theoretical approaches can start either from bound-state nuclear shell-model theory or from resonance scattering. Thus, proton-radioactivity guides merging these types of theoretical approaches, which is of broader relevance for any few-body quantum system. Here, we report experimental measurements of proton-emission branches from an isomeric state in 54mNi, which were visualized in four dimensions in a newly developed detector. We show that these decays, which carry an unusually high angular momentum, ℓ = 5 and ℓ = 7, respectively, can be approximated theoretically with a potential model for the proton barrier penetration and a shell-model calculation for the overlap of the initial and final wave functions.

The many roles of quantum tunnelling in chemical and biological evolution

&lt;p&gt;Tunnelling is a non-trivial quantum phenomenon which becomes effective at scales of around one nanometer and below. It enables elementary particles and atoms to negotiate an energetic barrier without having sufficient energy to overcome it. That seemingly paradoxical phenomenon might seem to be an exotic process only important for particle physics and quantum physical applications such as the Tunnel Diode or Scanning Tunnelling Microscopy.&lt;/p&gt; &lt;p&gt;This review discusses why quantum tunnelling is of vital importance for prebiotic chemistry and molecular biology and how physical and chemical processes which are essential for the chemical and biological evolution can be traced directly back to the effect of quantum tunnelling. These processes include the chemical evolution within the cold interstellar medium and within stars, prebiotic chemistry in the subsurface and atmosphere of planetary bodies, the rise and persistence of habitable conditions via insolation and geothermal heat and the function of complex biomolecules.&amp;#160;&lt;/p&gt; &lt;p&gt;The contribution provides a highly multidisciplinary view on quantum tunnelling in the context of the research on the origin and evolution of life and shows that tunnelling makes significant complexification in molecular and biological evolution possible by providing different sources of constant energy flux over a long period of time, enables synthesis pathways for astrochemical reactions which would otherwise not occur, and enables or influences specific functions of biomolecular nanomachines that maintain the process of life.&lt;/p&gt; &lt;p&gt;&lt;strong&gt;Reference&lt;/strong&gt;&lt;/p&gt; &lt;ul&gt; &lt;li&gt;Trixler. Quantum Tunneling to the Origin and Evolution of Life. &lt;em&gt;Curr. Org. Chem.&lt;/em&gt; &lt;strong&gt;17&lt;/strong&gt;(16), 1758-1770 (2013). DOI: 10.2174/13852728113179990083&lt;/li&gt; &lt;/ul&gt;