Electron Irradiation and Electron Tomography Studies of Glasses and Glass Nanocomposites

2008 ◽  
Vol 1107 ◽  
Author(s):  
G. Möbus ◽  
G. Yang ◽  
Z. Saghi ◽  
X. Xu ◽  
R.J. Hand ◽  
...  

AbstractCharacterization of glasses and glass nanocomposites using modern transmission electron microscopy techniques is demonstrated. Techniques used include: (i) high-angle-annular dark field STEM for imaging of nanocomposites, (ii) electron tomography for 3D reconstruction and quantification of nanoparticle volume fractions, and (iii) fine structure electron energy loss spectroscopy for evaluation of boron coordination. Precipitation of CeO2nanoparticles in borosilicate glasses is examined as a function of glass composition and redox partner elements. A large increase in the solubility of Ce is found for compositions where Ce retains +IV valence in the glass. Irradiation experiments with electrons and λ-rays are summarized and the degree of damage is compared by using changes in the boron K-edge fine structure, which allows the gradual transition from BO4to BO3coordination to be followed.

2018 ◽  
Vol 2018 ◽  
pp. 1-12
Author(s):  
N. Baladés ◽  
D. L. Sales ◽  
M. Herrera ◽  
A. M. Raya ◽  
J. C. Hernández-Garrido ◽  
...  

This paper explores the capability of scanning transmission electron microscopy (STEM) techniques in determining the dispersion degree of graphene layers within the carbon matrix by using simulated high-angle annular dark-field (HAADF) images. Results ensure that unmarked graphene layers are only detectable if their orientation is parallel to the microscope beam. Additionally, gold-marked graphene layers allow evaluating the dispersion degree in structural composites. Moreover, electron tomography has been demonstrated to provide truthfully 3D distribution of the graphene sheets inside the matrix when an appropriate reconstruction algorithm and 2D projections including channelling effect are used.


2011 ◽  
Vol 17 (5) ◽  
pp. 759-765 ◽  
Author(s):  
Tanmay Das ◽  
Somnath Bhattacharyya

AbstractStructure and chemistry across the rare earth oxide-Ge interfaces of a Gd2O3-Ge-Gd2O3 heterostructure grown on p-Si (111) substrate using encapsulated solid phase epitaxy method have been studied at nanoscale using various transmission electron microscopy methods. The structure across both the interfaces was investigated using reconstructed phase and amplitude at exit plane. Chemistry across the interfaces was explored using elemental mapping, high-angle annular dark-field imaging, electron energy loss spectroscopy, and energy dispersive X-ray spectrometry. Results demonstrate the structural and chemical abruptness of both the interfaces, which is most essential to maintain the desired quantum barrier structure.


2018 ◽  
Vol 386 ◽  
pp. 377-382
Author(s):  
Evgenii V. Pustovalov ◽  
Alexander F. Fedorets ◽  
Vladimir V. Tkachev ◽  
Vladimir S. Plotnikov

The structure of electrolytically deposited nanocrystalline alloys of the CoP-CoNiP systems under low-temperature heating was investigated by means of high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field scanning transmission electron microscopy (HAADF STEM), and analytical methods such as energy dispersive x-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS). Structural relaxation and crystallization were investigated at temperatures from 150°C to 300°C. Structural and compositional inhomogeneities were found in the CoP-CoNiP alloys, while the local changes in composition were found to reach 15 at.%. Nanocrystals in the alloys grew most intensely in the presence of a free surface. It was determined that the local diffusion coefficient ranged from 1.2 to 2.4 10−18 m2/s, which could be explained by the surface diffusion prevalence. The data gathered in these investigations can be further used to predict the thermal stability of CoP-CoNiP alloys.


2021 ◽  
Vol 11 (Suppl_1) ◽  
pp. S28-S28
Author(s):  
Andrey Moiseenko ◽  
Lubov Kozlovskaya ◽  
Aydar Ishmukhametov ◽  
Alexey Egorov ◽  
Konstantin Shaitan ◽  
...  

Background: The severe COVID-19 pandemic started in December 2019 is caused by the SARS-CoV-2 virus. The SARS-CoV-2 virion consists of a positive-sense single-stranded RNA (ssRNA), bound with the nucleocapsid N protein and surrounded by a lipid membrane with the embedded glycoprotein S and the transmembrane proteins M and E. The structure of inactivated SARS-CoV-2 virions is crucial for the development of vaccine-induced immunity. Here we characterized the nucleic acid distribution within β-propiolactone inactivated whole-virion SARS-CoV-2 vaccine CoviVac. Methods: We used EELS to verify the presence of phosphorus (P) inside the β-propiolactone inactivated virions. Electron microscopy was performed with a JEM-2100 200kV LaB6 transmission electron microscope (JEOL, Japan) equipped with a Gatan GIF Quantum ER energy filter (Gatan, USA) operating in spectrometer mode, along with a High-Angle Annular Dark-Field (HAADF) scanning transmission electron microscopy (STEM) detector. The cooling holder model 21090 (JEOL, Japan) was operated at -182 °С to reduce the contamination effects and to enhance the specimen's stability under the electron beam. We employ a negative stain with 2% (NH4)2MoO4 rather than uranyl acetate since the Uranium O4,5 peak (edge at 96 eV) is close to the P L2,3 peak (edge at 132 eV) and interferes with the accurate background interpolation. Results: The intensity under the P peak after the background subtraction was used for STEM-EELS mapping. We observed the characteristic P signal from the inner part of the virion but not from the bare grid. The observed P signal could arise from either viral RNA or lipids of the virus membrane, and since the P signal is highly heterogeneous, it is more likely to originate from RNA. Conclusion: So far, phosphorous mapping in individual virions using EELS was done only with samples prepared using highly specialized techniques, which minimized the sample thickness, including the substrate thickness. Here, we performed elemental mapping on ordinary samples of whole viruses. All investigated virions contained P signal, but its spatial distribution and intensity differed significantly. This clearly reflects the non-even distribution of the genomic RNA, which, apparently, accompanies their inner heterogeneity, previously observed by in-situ cryo-electron tomography.


1999 ◽  
Vol 589 ◽  
Author(s):  
T. Akita ◽  
K. Tanaka ◽  
S. Tsubota ◽  
M. Haruta

AbstractHRTEM(High-Resolution Transmission Electron Microscope), HAADF-STEM (High Angle Annular Dark Field Scanning Transmission Electron Microscope) and EELS(Electron Energy Loss Spectroscopy) techniques were applied for the characterization of Au/TiO2 catalysts. HAADFSTEM provides precise size distributions for Au particles smaller than ∼2nm in diameter. It was observed that many small particles under 2nm were supported on anatase TiO2 having a large surface area. The HAADF-STEM method was examined as a way to measure the shape of Au particles. EELS measurements were also used to examine the interface between Au and TiO2 support to study electronic structure effects.


2011 ◽  
Vol 679-680 ◽  
pp. 330-333 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
Hirofumi Matsuhata ◽  
T. Suzuki ◽  
Takashi Shinohe ◽  
Hajime Okumura

SiO2/4H-SiC interfaces are examined by high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), and spatially resolved electron energy-loss spectroscopy (EELS). HRTEM and HAADF-STEM images of SiO2/4H-SiC interfaces reveal that abrupt interfaces are formed irrespective of the fabrication conditions. Transition regions around the interfaces reported by Zheleva et al. were not observed. Using EELS, profiles of the C/Si and O/Si ratios across an interface were measured. Our measurements did not reveal a C-rich region on the SiC side of the interface, which was reported by Zheleva et al.


2012 ◽  
Vol 1421 ◽  
Author(s):  
J. S. Barnard ◽  
J. H. Sharp ◽  
S. Hata ◽  
M. Mitsuhara ◽  
K. Kaneko ◽  
...  

ABSTRACTWe review the progress in the electron tomography of dislocation microstructures in the transmission electron microscope (TEM). Dislocation contrast is visible both in conventional TEM and scanning TEM (STEM) modes and, despite the complicated intensity variations, dislocation contrast can be isolated using computational filtering techniques prior to reconstruction. We find that STEM annular dark-field (STEM-ADF) imaging offers significant advantages in terms of dislocation contrast and background artifacts. We present several examples, both in semiconducting and metallic systems, illustrating the properties of 3D dislocations. We present the high-angle triple-axis (HATA) specimen holder where the diffraction condition can be chosen at will and dislocation tomograms of multiple reflections can be combined. 3D dislocations are analyzed in terms of dislocation density and dislocation nodal structures. Several avenues of study are suggested that may exploit the 3D dislocation data.


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