Evaluation of Crystalline Quality of Zirconium Dioxide Films on Silicon by Means of Ion Beam Channeling

Zirconium dioxide (ZrO2) films are deposited on Si(100) and Si(lll) substrates at 800ºC by vacuum evaporation. Channeling spectrum of the Rutherford backscattering shows that ZrO2 films (tetragonal(200)) are epitaxially grown on the Si(100) substrate. The fluctuation of crystallite orientation in the epitaxial layer is estimated to be 0.32º, by analyzing the angular dependence of the aligned and random backscattering spectra. Energy dependence of dechanneling factors in 0.3—2.0 MeV 4He+ indicates that the dominant defect arises from the stackingfaults.