Characterization of Indium Sulfide Thin Films Containing Copper
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AbstractThe crystalline, optical and electrical properties of In2S3 containing copper thin films are investigated. Increasing the amount of copper within the In2S3 crystalline matrix yields reduced bandgap value and hindered conductivity. The films investigated being synthesized at low temperature (200 °C), it is likely they have similar properties as the materials formed at the CuIn1-xGaxSe2/In2S3 interface.
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2014 ◽
Vol 603
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pp. 119-124
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2013 ◽
Vol 93
(26)
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pp. 3527-3546
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2017 ◽
Vol 132
(3)
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pp. 527-530
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2012 ◽
Vol 99
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pp. 356-361
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2016 ◽
Vol 42
(13)
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pp. 14581-14586
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