Characterization of Indium Sulfide Thin Films Containing Copper

2009 ◽  
Vol 1165 ◽  
Author(s):  
Nicolas Barreau ◽  
Mickael Tessier

AbstractThe crystalline, optical and electrical properties of In2S3 containing copper thin films are investigated. Increasing the amount of copper within the In2S3 crystalline matrix yields reduced bandgap value and hindered conductivity. The films investigated being synthesized at low temperature (200 °C), it is likely they have similar properties as the materials formed at the CuIn1-xGaxSe2/In2S3 interface.

1999 ◽  
Vol 596 ◽  
Author(s):  
K. Kato

AbstractCaBi2Ta2O9 and BaBi2Ta2O9 thin films were successfully prepared by using triple alkoxide precursors such as Ca[BiTa(OC2H5)9]2 and Ba[BiTa(OC2H5)9]2, respectively. As-deposited films were amorphous and crystallized below 500°C by rapid thermal annealing in oxygen. The crystallinity improved with annealing temperature. The development of the crystal structure and surface topography of the thin films were investigated. Additionally, some electrical properties were evaluated.


2014 ◽  
Vol 10 (4) ◽  
pp. 869-878 ◽  
Author(s):  
Soaram Kim ◽  
Giwoong Nam ◽  
Hyunsik Yoon ◽  
Hyunggil Park ◽  
Hyonkwang Choi ◽  
...  

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