Mid-infrared Electroluminescence from Surface Plasmon Coupled InAs Quantum Dots

AbstractThe mid-infrared spontaneous emission from intersubband energy transitions in self-assembled InAs quantum dots is demonstrated with plasmonic top contact output couplers. Electrically pumped devices having subwavelength meshes designed to exhibit extraordinary optical transmission from 9 – 12 μm are measured and compared to a reference device with an open area contact. From additional patterning on the top contact, the signal-to-noise ratio was 4 times greater than the reference device. Beyond simply filtering the emission spectra of the quantum dot material, an emission null is observed which we link to the dots being in the near field region of the plasmonic coupler.

Download Full-text

Near-field spectroscopy of single self-assembled InAs quantum dots: Observation of energy relaxation process

Microelectronic Engineering ◽

10.1016/s0167-9317(99)00164-1 ◽

1999 ◽

Vol 47 (1-4) ◽

pp. 111-113

Author(s):

Y. Toda ◽

K. Suzuki ◽

S. Shinomori ◽

Y. Arakawa

Keyword(s):

Quantum Dots ◽

Relaxation Process ◽

Near Field ◽

Energy Relaxation ◽

Inas Quantum Dots ◽

Field Spectroscopy ◽

Self Assembled

Download Full-text

Intersublevel Spectroscopy on Single InAs-Quantum Dots by Terahertz Near-Field Microscopy

Nano Letters ◽

10.1021/nl302078w ◽

2012 ◽

Vol 12 (8) ◽

pp. 4336-4340 ◽

Cited By ~ 39

Author(s):

Rainer Jacob ◽

Stephan Winnerl ◽

Markus Fehrenbacher ◽

Jayeeta Bhattacharyya ◽

Harald Schneider ◽

...

Keyword(s):

Quantum Dots ◽

Near Field ◽

Inas Quantum Dots

Download Full-text

Injection of spin polarized electrons in InAs quantum dots

MRS Proceedings ◽

10.1557/proc-1208-o02-02 ◽

2009 ◽

Vol 1208 ◽

Author(s):

Andreas Russ ◽

Mesut Yasar ◽

Athos Petrou ◽

George Kioseoglou ◽

Connie Li ◽

...

Keyword(s):

Magnetic Field ◽

Quantum Dots ◽

Spin Injection ◽

Emission Spectra ◽

Exchange Interactions ◽

Electron Spin Polarization ◽

Polarized Electrons ◽

Inas Quantum Dots ◽

Spin Polarized ◽

Spin Led

AbstractWe present the results of an electrical injection study of spin polarized electrons from ferromagnetic Fe contacts into electronic shells of self-assembled InAs quantum dots (QDs) incorporated in GaAs/AlGaAs spin LED structures. The circular polarization of the emitted light was measured as function of current and magnetic field. The polarization of the EL spectra exhibits strong maxima at energies that do not coincide with the electroluminescence (EL) intensity peaks. The magnetic field dependence of the polarization maxima is consistent with spin injection from the ferromagnetic Fe contacts. The experimental results are compared with calculated emission spectra from multi-exciton complexes (N = 2 and N = 6) as function of electron spin polarization. The energies of the EL features as well as their polarization characteristics are understood in terms of energy shifts due to exchange interactions between spin-down electrons occupying adjacent shells.

Download Full-text

(110) InAs Quantum Dots: Growth, Single-Dot Luminescence and Cleaved Edge Alignment

MRS Proceedings ◽

10.1557/proc-829-b1.5 ◽

2004 ◽

Vol 829 ◽

Author(s):

D. Wasserman ◽

E. A. Shaner ◽

S. A. Lyon ◽

M. Hadjipanayi ◽

A. C. Maciel ◽

...

Keyword(s):

Quantum Dots ◽

Emission Spectra ◽

Crystal Plane ◽

Low Density ◽

Inas Quantum Dots ◽

Varying Thickness ◽

Gaas Substrates ◽

Density Growth ◽

Conventional Photolithography ◽

Linear Alignment

ABSTRACTThe formation of InAs self-assembled quantum dots on (110) GaAs substrates is demonstrated. These dots form with significantly lower densities than InAs dots grown on (100) GaAs. The low density growth mode of these InAs nanostructures allows for the fabrication of devices capable of electroluminescence from individual quantum dots. Such a device has been fabricated with conventional photolithography and its emission spectra characterized. Additionally, because GaAs cleaves naturally along the (110) crystal plane, the ability to grow InAs quantum dots on (110) GaAs substrates allows for the growth of these dots on the cleaved edges of GaAs first growth samples containing InGaAs strain layers of varying thickness and In fraction. 100% linear alignment of InAs quantum dots over these InGaAs strain layers is demonstrated.

Download Full-text

GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications

10.5772/intechopen.94609 ◽

2020 ◽

Author(s):

Mickael Martin ◽

Thierry Baron ◽

Yann Bogumulowicz ◽

Huiwen Deng ◽

Keshuang Li ◽

...

Keyword(s):

Quantum Dots ◽

Active Region ◽

Photonic Devices ◽

Threading Dislocations ◽

Inas Quantum Dots ◽

Sensing Applications ◽

Electrically Pumped ◽

Dislocations Density ◽

Antiphase Domains ◽

The Right

III-V semiconductors present interesting properties and are already used in electronics, lightening and photonic devices. Integration of III-V devices onto a Si CMOS platform is already in production using III-V devices transfer. A promising way consists in using hetero-epitaxy processes to grow the III-V materials directly on Si and at the right place. To reach this objective, some challenges still needed to be overcome. In this contribution, we will show how to overcome the different challenges associated to the heteroepitaxy and integration of III-As onto a silicon platform. We present solutions to get rid of antiphase domains for GaAs grown on exact Si(100). To reduce the threading dislocations density, efficient ways based on either insertion of InGaAs/GaAs multilayers defect filter layers or selective epitaxy in cavities are implemented. All these solutions allows fabricating electrically pumped laser structures based on InAs quantum dots active region, required for photonic and sensing applications.

Download Full-text