The Properties of Silica and Hybrid Nanostructures

2010 ◽  
Vol 1256 ◽  
Author(s):  
Avi Shalav ◽  
Robert Elliman ◽  
Taehyun Kim
Keyword(s):  
Physical Properties ◽  
Growth Mechanism ◽  
Optically Active ◽  
Hybrid Nanostructures ◽  
Si Substrate ◽  
Active Oxidation ◽  
Vapor Liquid Solid ◽  
Coating Methods ◽  
Secondary Materials ◽  
Vapor Liquid Solid Growth

AbstractSiOx nanowires can be grown via the vapor-liquid-solid growth mechanism using SiO vapor produced during the active oxidation of a Si substrate. The as-grown SiOx nanowire have a range of useful physical properties but can also be used as large surface area substrates for the growth of secondary materials. In this study we report the use of optically active impurities to grow and dope secondary nanowire structures, and the use of simple coating methods to enhance and extend the functionality of these unique nanowire substrates.

Vapor–Liquid–Solid Growth of 3C-SiC on α-SiC Substrates. 1. Growth Mechanism

2008 ◽  
Vol 8 (3) ◽  
pp. 1044-1050 ◽  
Author(s):  
Maher Soueidan ◽  
Gabriel Ferro ◽  
Olivier Kim-Hak ◽  
François Cauwet ◽  
Bilal Nsouli
Keyword(s):  
Growth Mechanism ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Phase-Equilibrium-Dominated Vapor−Liquid−Solid Growth Mechanism

2010 ◽  
Vol 132 (13) ◽  
pp. 4843-4847 ◽  
Author(s):  
Chengyu He ◽  
Xizhang Wang ◽  
Qiang Wu ◽  
Zheng Hu ◽  
Yanwen Ma ◽  
...  
Keyword(s):  
Phase Equilibrium ◽  
Growth Mechanism ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

scholarly journals Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5179
Author(s):  
Chuchu Guo ◽  
Laifei Cheng ◽  
Fang Ye ◽  
Qing Zhang
Keyword(s):  
Thermal Stability ◽  
Growth Mechanism ◽  
Emission Spectra ◽  
Photoluminescence Properties ◽  
Si Substrate ◽  
Vapor Liquid Solid ◽  
Good Thermal Stability ◽  
Sic Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Different Thickness

We report on the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000 °C. The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.

scholarly journals Condensation Experiments of Mg-Silicate Minerals

1991 ◽  
Vol 126 ◽  
pp. 83-86
Author(s):  
A. Tsuchiyama
Keyword(s):  
Growth Mechanism ◽  
Fundamental System ◽  
Interplanetary Dust ◽  
Vapor Liquid Solid ◽  
Silicate Minerals ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

AbstractCondensation experiments were performed in the simple but most fundamental system Mg-Si-O-H with forsterite vaporization source. At temperatures above about 1000°C, euhedral crystals of forsterite (Mg2SiO4) of a few μm were formed. These crystals are similar to olivines in Allende matrix. At temperatures below about 1000°C, whiskers of forsterite and enstatite (MgSiO3) were formed by vapor-liquid-solid growth mechanism. These whiskers are different from enstatite whiskers in interplanetary dust, which were probably formed at small super coolings.

Vapor–liquid–solid growth route to AlN nanowires on Au-coated Si substrate by direct nitridation of Al powder

2011 ◽  
Vol 334 (1) ◽  
pp. 57-61 ◽  
Author(s):  
Leshu Yu ◽  
Yingying Lv ◽  
Xiaolan Zhang ◽  
Yiyue Zhang ◽  
Ruyi Zou ◽  
...  
Keyword(s):  
Si Substrate ◽  
Vapor Liquid Solid ◽  
Al Powder ◽  
Direct Nitridation ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

scholarly journals Adjusting the Morphology and Properties of SiC Nanowires by the Catalyst Control

2020 ◽  
Author(s):  
Chuchu Guo ◽  
Laifei Cheng ◽  
Fang Ye
Keyword(s):  
Thermal Stability ◽  
Growth Mechanism ◽  
Emission Spectra ◽  
Photoluminescence Properties ◽  
Si Substrate ◽  
Vapor Liquid Solid ◽  
Good Thermal Stability ◽  
Sic Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Different Thickness

Abstract Herein, we report the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al2O3 and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and the SiC nanowires were grown according to two mechanisms, i.e., the oxide-assisted growth mechanism and vapor- liquid-solid mechanism. As a result, the pearl-chain-like SiC nanowires and straight SiC nanowires were obtained. The prepared nanowires exhibited excellent photoluminescence properties, the emission spectra displaying two emission peaks at 395 and 465 nm, and have good thermal stability below 1000℃.The experimental results revealed the importance of the catalyst in controlling the morphology and properties of SiC nanowires.

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