ESR Characteristics of Cubic Boron Nitride Crystals

1992 ◽  
Vol 242 ◽  
Author(s):  
Fangqing Zhang ◽  
Guanghua Chen
Keyword(s):  
Electron Spin Resonance ◽  
Raman Spectrum ◽  
Boron Nitride ◽  
Spin Density ◽  
Electron Spin ◽  
Cubic Boron Nitride ◽  
Peak Width ◽  
Dangling Bond ◽  
Spin Resonance ◽  
G Value

ABSTRACTElectron spin resonance (ESR) spectrum have been used to study undoped cubic boron nitride crystals. The results show that the peak-to-peak width of the ESR signal is 27×10-4 T and the g-value is 2.00248, the spin density N s is 2.8×1015 cm-3, it is considered that the ESR signal is originated from the nitrogen dangling bond. Raman spectrum measurements have been also carried out, the peak positions are at 1054 cm-1 and 1306 cm-1.

Electron Spin Resonance Study of the Dangling Bond in a-Si:H and Porous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
T.J. Mc Mahon ◽  
Y. Xiao
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Electrochemical Etching ◽  
Bond Line ◽  
Electron Spin Resonance Study ◽  
Dangling Bond ◽  
Porous Si ◽  
Spin Resonance ◽  
G Value

We compare the electron spin resonance (ESR) signal of the dangling bond in porous silicon films, produced by electrochemical etching, to the ESR signal from hydrogenated amorphous Si (a-Si:H). The anisotropy of the ESR signal in porous Si showed g values varying as for the Pb Si/SiO2 interface dangling bond. The g value varies from g|| − 2.0020 to gL − 2.0080 with an inhomogeneously broadened line width increasing from 1.8 to 3.8 G. A porous Si ESR powder line, with superhyperfine and strain broadening intrinsic to porous Si, is compared to the a−Si:H dangling bond line. The result is more inhomogeneous broadening of line widths parallel and perpendicular to the dangling bond axis in a-Si:H, and less anisotropy in g|| − gL- No evidence was seen for light-induced metastability on a H-passivated porous Si film.

Electron Spin Resonance and Raman Spectra of Cubic Boron Nitride Crystals

1991 ◽  
Vol 128 (2) ◽  
pp. K113-K115 ◽  
Author(s):  
Guanghua Chen ◽  
Zhizhong Song ◽  
Fangqing Zhang
Keyword(s):  
Electron Spin Resonance ◽  
Boron Nitride ◽  
Raman Spectra ◽  
Electron Spin ◽  
Cubic Boron Nitride ◽  
Spin Resonance

Infrared Absorption and Electron Spin Resonance Studies of Nanocrystalline Cubic Boron Nitride/Amorphous Hydrogenated Boron Nitride Mixed Phase Thin Films

1995 ◽  
Vol 395 ◽  
Author(s):  
Shu-han Lin ◽  
Ian M. Brown ◽  
Bernard J. Feldman
Keyword(s):  
Thin Films ◽  
Electron Spin Resonance ◽  
Boron Nitride ◽  
Hyperfine Structure ◽  
Amorphous Phase ◽  
Electron Spin ◽  
Infrared Absorption ◽  
Cubic Boron Nitride ◽  
Nanocrystalline Phase ◽  
Spin Resonance

ABSTRACTBoth infrared absorption (IR) and electron spin resonance (ESR) spectroscopies have been used to investigate the complicated structure of nanocrystalline cubic boron nitride/amorphous hydro-genated boron nitride thin films. The ESR spectra from this material consist of a component with a four-line hyperfine structure and/or a component with a ten-line hyperfine structure superimposed upon a broad central line. The hyperfine structures are associated with defect centers located in the nanocrystalline phase, whereas the broad line is attributed to dangling bonds in the amorphous phase. The IR spectra consist of three lines around 1400 cm−1: the lines at 1263 and 1505 cm−1 originate in a boron-poor amorphous hydrogenated boron nitride region; the line at 1371 cm−1, in a boron-rich amorphous hydrogenated boron nitride region. These results, together with previously reported electron diffraction spectra, suggest the following picture: small (2.5 nm) nanocrys-tallites of cubic boron nitride (about 5% of the material) are imbedded in a mixed amorphous phase. The amorphous region can be approximated by a mixture of boron-rich and boron-poor amorphous hydrogenated boron nitride.

Note on the Electron Spin Resonance of the V1-center – Calculation of the Electronic g-value –

1956 ◽  
Vol 11 (5) ◽  
pp. 612-613 ◽  
Author(s):  
Teturo Inui ◽  
Susumu Harasawa ◽  
Yukio Obata
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Spin Resonance ◽  
G Value

Electron spin resonance in carbon-doped boron nitride

1971 ◽  
Vol 9 (16) ◽  
pp. vi-vii
Author(s):  
A.W. Moore ◽  
L.S. Singer
Keyword(s):  
Electron Spin Resonance ◽  
Boron Nitride ◽  
Electron Spin ◽  
Carbon Doped ◽  
Spin Resonance

Defect and Tail States in Microcrystalline Silicon investigated by pulsed ESR

2000 ◽  
Vol 609 ◽  
Author(s):  
P. Kanschat ◽  
H. Mell ◽  
K. Lips ◽  
W. Fuhs
Keyword(s):  
Electron Spin Resonance ◽  
Detailed Analysis ◽  
Electron Spin ◽  
Qualitative Model ◽  
Dangling Bond ◽  
Microcrystalline Silicon ◽  
Band Tail ◽  
Spin Resonance ◽  
Donor States ◽  
Broad Structure

ABSTRACTWe report on a detailed analysis of paramagnetic states in a doping series of microcrystalline silicon, μc-Si:H, by pulsed electron spin resonance. We identify two dangling bond like structures at g = 2.0052 (db1) and g = 2.0043 (db2). Whereas db1 is evenly distributed in the gap, the db2 state is found to be localized in the lower part of the gap. The CE resonance at g ≈ 1.998 is assigned to electrons in conduction band tail states. In p-doped samples, we observe a broad structure CH at g ≈ 2.08 which we identify with holes trapped in valence band tail states. It is shown that the CH state behaves very similar on illumination as the CE resonance. In n-type samples a pair of hyperfine split lines (A ≈ 11 mT) is found which apparently does not originate from 31P-donor states. On the basis of our results we propose a qualitative model for paramagnetic states in μc-Si:H.

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