Homoepitaxial Alignment of SrTiO3 Thin Films Prepared by Metallo-Organic Decomposition.

1991 ◽  
Vol 249 ◽  
Author(s):  
Gabriel Braunstein ◽  
Gustavo R. Paz-Pujalt
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Solid Phase ◽  
Single Crystal Substrate ◽  
Layer By Layer ◽  
Extrinsic Factors ◽  
Ion Channeling ◽  
Random Nucleation ◽  
Crystal Substrate ◽  
Organic Decomposition

ABSTRACTWe demonstrate the homoepitaxial growth of SrTiO3 prepared by the method of metallo-organic decomposition (MOD). Thin films of SrTiO3 are prepared by spin-coating and thermal decomposition of a solution of metallo-organic compounds, on single crystal, <100> oriented, SrTiO3 substrates and subsequently heat treated at temperatures ranging from 650°C to 1100°C for 30 minutes. Heat treatment at 1100°C results in the formation of single-crystal SrTiO3, perfectly aligned with respect to the underlying substrate.Ion-channeling analysis shows that the transformation to singlecrystal material proceeds epitaxially from the coating-substrate interface towards the surface of the sample. Transmission electron microscopy (TEM) studies of partially regrown samples reveal two distinct phases: an epitaxially aligned single-crystal phase, adjacent to the substrate, and a polycrystalline phase on top. On the basis of these observations, it is proposed that the crystallization of the MOD films involves the competition between two processes: layer-by-layer solid phase epitaxy and random nucleation and growth of crystallites. Layerby- layer epitaxy is the predominant crystallization mechanism unless it is inhibited by extrinsic factors like the contamination of the interface between the MOD film and the single-crystal substrate.

Microstructure and enhanced in-plane ferroelectricity of Ba0.7Sr0.3TiO3 thin films grown on MgAl2O4 (001) single-crystal substrate

2006 ◽  
Vol 89 (23) ◽  
pp. 232906 ◽  
Author(s):  
X. Y. Zhou ◽  
T. Heindl ◽  
G. K. H. Pang ◽  
J. Miao ◽  
R. K. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Substrate ◽  
Crystal Substrate

Epitaxial growth and dielectric properties of BSZT thin films on SrTiO3:Nb single crystal substrate prepared by pulsed laser deposition

2013 ◽  
Vol 229 ◽  
pp. 162-164 ◽  
Author(s):  
L.L. Jiang ◽  
X.G. Tang ◽  
Y.P. Jiang ◽  
Q.X. Liu ◽  
C.B. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Single Crystal Substrate ◽  
Crystal Substrate

Heteroepitaxial Growth of Strontium Titanate on Lanthanum Aluminate Using the Metallo-Organic Decomposition Technique.

1993 ◽  
Vol 317 ◽  
Author(s):  
Gabriel Braunstein ◽  
Gustavo R. Paz-Pujalt ◽  
James F. Elman
Keyword(s):  
Solid Phase ◽  
Precursor Solution ◽  
Solid Phase Epitaxy ◽  
Heteroepitaxial Growth ◽  
Potential Influence ◽  
Ion Channeling ◽  
Random Nucleation ◽  
Lanthanum Aluminate ◽  
Organic Precursors ◽  
Organic Decomposition

ABSTRACTWe demonstrate the heteroepitaxial growth of thin films of SrTiO3 prepared by the method of Metallo-organic decomposition on LaAlO3 substrates. The SrTiO3 films are prepared by spin coating and thermal decomposition of a solution of Metallo-organic precursors on single-crystal, <100> oriented, LaAK>3 substrates. Subsequent heat treatment at 1100 – 1200 °C for 1 h results in the epitaxial alignment of the SrTiO3 films with respect to the LaAlO3 substrate.The degree of alignment of the films appears to depend on their thickness, with thinner films showing better alignment (as determined by ion-channeling measurements). This behavior is interpreted as a result of the competition between solid-phase epitaxy and random nucleation, observed during the crystallization of films prepared by Metallo-organic decomposition. However, since thinner films have been prepared by dilution of the precursor solution, there is also the possibility that the concentration of the precursor solution may influence the crystallization behavior of the films.The potential influence of the precursor formulation on the crystallization mechanism is discussed.

Enhanced in-plane ferroelectricity in Ba0.7Sr0.3TiO3 thin films grown on MgO (001) single-crystal substrate

2005 ◽  
Vol 86 (21) ◽  
pp. 212904 ◽  
Author(s):  
D. Y. Wang ◽  
Y. Wang ◽  
X. Y. Zhou ◽  
H. L. W. Chan ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Substrate ◽  
Crystal Substrate

Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films

2011 ◽  
Vol 318 (1) ◽  
pp. 516-518 ◽  
Author(s):  
T. Nakamura ◽  
K. Masuko ◽  
A. Ashida ◽  
T. Yoshimura ◽  
N. Fujimura
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Surface Preparation ◽  
Zno Thin Films ◽  
Single Crystal Substrate ◽  
Crystal Substrate ◽  
Zno Single Crystal

Characterisation of Thin Films of the Ferroelectric Material SrBi 2 Ta 2 O 9 Obtained by Sol-Gel Methods on Sr 2 RuO 4 (001) Single Crystal Substrate

2003 ◽  
Vol 288 (1) ◽  
pp. 1-9
Author(s):  
S. Léonard ◽  
V. Madigou ◽  
S. Villain ◽  
E. Nigrelli ◽  
G. Nihoul
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Sol Gel ◽  
Ferroelectric Material ◽  
Single Crystal Substrate ◽  
Crystal Substrate

Atomic Registry at the Pt-Si Interface Studied by Transmission Channeling RBS

1986 ◽  
Vol 77 ◽  
Author(s):  
John R. Abelson ◽  
Thomas W. Sigmon
Keyword(s):  
Single Crystal ◽  
Volume Effect ◽  
Single Crystal Sample ◽  
Single Crystal Substrate ◽  
Crystal Sample ◽  
Internal Interface ◽  
Ion Channeling ◽  
Rutherford Scattering ◽  
Crystal Substrate ◽  
Cleaning Procedures

ABSTRACTTransmission channeling Rutherford scattering of MeV ions is one of the only techniques which can probe the atomic registry at a “buried” internal interface between a thin film and single-crystal substrate. Interfacial intermixing, dislocations, and reconstruction can be observed at concentrations above ∼ 3×1015 atoms/cm. The physical basis for this measurement is the “flux-peaking” effect, which is well known in conventional ion channeling as a method to determine the lattice location of dilute impurities. Transmission channeling is conceptually similar, but the scattering arises from the interface at the exit side of a thin single crystal sample rather than from a volume effect.In this work, we apply transmission channeling to measure the low temperature intermixing between Pt and Si. In a previous study, we suggested that a disordered interface forms prior to crystalline suicide formation. The present results are a quantitative measurement of the area density of Si which intermixes with Pt at 150°C. Experiments are performed using 80A Pt layers e-béam deposited onto 1–2μm thick single crystals of Si(100) and (111) following various interfacial cleaning procedures. We find that >1×1016 Si atoms/cm2 are displaced from their lattice sites after Pt deposition, increasing to ∼2×1016/cm2 upon annealing to 150°C. The room temperature intermixing of >6 monolayers of Si is large, but not inconsistent with existing studies of the Pt - Si reaction. The transmission channeling measurement includes any Si segregated at grain boundaries or the free surface as well as the interface. No systematic differences are observed as a function of substrate orientation or cleaning procedure.

Thermal radiative properties of (La1−xSrx)MnO3−δ thin films fabricated on yttria-stabilized zirconia single-crystal substrate by pulsed laser deposition

2015 ◽  
Vol 593 ◽  
pp. 1-4 ◽  
Author(s):  
Tadashi Shiota ◽  
Kenichi Sato ◽  
Jeffrey S. Cross ◽  
Naoki Wakiya ◽  
Sumitaka Tachikawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Radiative Properties ◽  
Laser Deposition ◽  
Single Crystal Substrate ◽  
Stabilized Zirconia ◽  
Thermal Radiative Properties ◽  
Crystal Substrate
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