Visible Luminescence from Silicon: Quantum Confinement or Siloxene?

1992 ◽  
Vol 262 ◽  
Author(s):  
M. S. Brandt ◽  
H. D. Fuchs ◽  
A. Höpner ◽  
M. Rosenbauer ◽  
M. Stutzmann ◽  
...  

ABSTRACTThe discovery of strong visible photoluminescence at room temperature from porous silicon has triggered new hope that light-emitting devices compatible with existing Si-technology might become possible. We first review the luminescence behavior observed in silicon-based materials such as amorphous Si, microcrystalline Si, or SiO2. We then critically discuss the present model for the luminescence from porous silicon based on quantum confinement in view of the growing experimental evidence for the importance of both hydrogen and oxygen to obtain efficient luminescence from this material. We propose an alternative explanation based on the presence of siloxene (SieO3H6) in porous silicon which is corroborated by experimental results obtained with photoluminescence, Raman and IR spectroscopy. An important aspect is that siloxene can be prepared by methods different from anodic oxidation, and one particular technique will be described together with possible ways to tune the luminescence energy.

Author(s):  
M. W. Cole ◽  
J. F. Harvey ◽  
R.A. Lux ◽  
D.W. Eckart

The recent observations of visible light emission from porous silicon layers (PSL) have attracted much interest due to its potential applications in silicon based optoelectronic integrated circuits, optical memories and advanced display systems. To realize these potential applications this material must be fully characterized. Specifically, the microstructure must be studied in order to understand the origin of the light emission. Unfortunately, the issue of the detailed geometry of porous silicon is not fully resolved because of the difficulty in performing transmission electron microscopy (TEM) measurements on these fragile structures. One of the first microstructural studies on visible emitting PSL, presented by Cullis and Canham, showed the material to be composed of needle-like structures having a cross sectional diameter of 3nm. It was suggested that the visible luminescence in this material is due to quantum confinement of these small structures. A major limitation of this work was the method of TEM sample preparation.


1997 ◽  
Vol 486 ◽  
Author(s):  
Philippe M. Fauchet

AbstractImpressive advances have been made over the last few years in teaching silicon how to emit light. Recently, light-emitting devices made of porous silicon and other forms of nanoscale silicon have been demonstrated with specifications that start to make them attractive for commercial applications. This paper reviews the state-of-the-art in the materials science and device properties of nanoscale silicon-based LEDs, including their integration with microelectronic circuits.


2004 ◽  
Author(s):  
Sylvain David ◽  
Moustapha El Kurdi ◽  
Philippe Boucaud ◽  
Cecile Kammerer ◽  
Xiang Li ◽  
...  

1996 ◽  
Vol 68 (12) ◽  
pp. 1663-1665 ◽  
Author(s):  
D. W. Cooke ◽  
B. L. Bennett ◽  
E. H. Farnum ◽  
W. L. Hults ◽  
K. E. Sickafus ◽  
...  

2001 ◽  
Vol 121 (1-3) ◽  
pp. 1631-1632 ◽  
Author(s):  
M. Lakehal ◽  
T.P. Nguyen ◽  
P. Le Rendu ◽  
P. Joubert ◽  
P. Destruel

Nature ◽  
1996 ◽  
Vol 384 (6607) ◽  
pp. 338-341 ◽  
Author(s):  
K. D. Hirschman ◽  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet

Vacuum ◽  
2005 ◽  
Vol 78 (2-4) ◽  
pp. 551-556 ◽  
Author(s):  
M.A. Lourenço ◽  
M. Milosavljevic ◽  
S. Galata ◽  
M.S.A. Siddiqui ◽  
G. Shao ◽  
...  

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