Silicon-based visible light-emitting devices integrated into microelectronic circuits

Nature ◽  
1996 ◽  
Vol 384 (6607) ◽  
pp. 338-341 ◽  
Author(s):  
K. D. Hirschman ◽  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet
Keyword(s):  
Visible Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Silicon Based

Integrating Bipolar Junction Transistors with Silicon-Based Light-Emitting Devices

1996 ◽  
Vol 452 ◽  
Author(s):  
K. D. Hirschman ◽  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet
Keyword(s):  
Visible Light ◽  
Integrated Circuit ◽  
Silicon Oxide ◽  
Process Integration ◽  
Optoelectronic Device ◽  
Device Fabrication ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Integrated Circuit Manufacturing ◽  
Silicon Based

AbstractSilicon-based optoelectronic devices enable the realization of optoelectronic systems that are compatible with integrated circuit manufacturing technology. This work reports on silicon-based visible light-emitting devices (LEDs) that have been successfully integrated into a standard bipolar fabrication sequence. The basic LED structure consists of a 0.5–1.0μm thick silicon-rich silicon oxide (SRSO) active light-emitting layer formed on a p-type silicon wafer by partial oxidation of porous silicon (PSi), with an n+ doped polysilicon cathode. The LEDs exhibit bright electroluminescence (EL) with a spectral peak between 1.75 and 1.90e. The LEDs are connected in a common-emitter configuration to integrated vertical pnp bipolar driver transistors. This is the first demonstration of an all-silicon visible light emitter / bipolar transistor optoelectronic integrated circuit. The LED device fabrication, process integration, and optoelectronic device characteristics are discussed.

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Ge/Si self-assembled islands integrated in 2D photonic crystals microcavities for realisation of silicon-based light-emitting devices

2004 ◽  
Author(s):  
Sylvain David ◽  
Moustapha El Kurdi ◽  
Philippe Boucaud ◽  
Cecile Kammerer ◽  
Xiang Li ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Self Assembled ◽  
Silicon Based

GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices

2001 ◽  
Vol 40 (Part 1, No. 6A) ◽  
pp. 3953-3959 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Mitsunari Itoh ◽  
Junji Saraie ◽  
Toshiyuki Yasui ◽  
Sanghoon Ha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Molecular Beam ◽  
Si Substrate ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Metalorganic Molecular Beam Epitaxy

Proposal of a novel BeZnSeTe quaternary for II-VI middle range visible light emitting devices on InP substrates

2004 ◽  
Vol 241 (3) ◽  
pp. 747-750 ◽  
Author(s):  
Yasushi Takashima ◽  
Ichirou Nomura ◽  
Yuki Nakai ◽  
Akihiko Kikuchi ◽  
Katsumi Kishino
Keyword(s):  
Visible Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Middle Range ◽  
Inp Substrates

Silicon-based light emitting devices

Vacuum ◽  
2005 ◽  
Vol 78 (2-4) ◽  
pp. 551-556 ◽  
Author(s):  
M.A. Lourenço ◽  
M. Milosavljevic ◽  
S. Galata ◽  
M.S.A. Siddiqui ◽  
G. Shao ◽  
...  
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Silicon Based
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