Growth Kinetics of Molecular Beam Epitaxy on Non-Singular Surfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
J. F. Egler ◽  
N. Otsuka ◽  
K. Mahalingam
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Singular Surface ◽  
Sticking Coefficient ◽  
Singular Surfaces ◽  
Vicinal Surfaces ◽  
Kinetics Of ◽  
Multiple Configurations

ABSTRACTGrowth kinetics on non-singular surfaces were studied by Monte Carlo simulations. In contrast to the growth on singular and vicinal surfaces, the sticking coefficient on the non-singular surfaces was found to decrease with increase of the surface roughness. Simulations of annealing processes showed that surface diffusion of atoms leads to a stationary surface roughness, which is explained by multiple configurations having the lowest energy in the non-singular surface.

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

2004 ◽  
Vol 84 (18) ◽  
pp. 3684-3686 ◽  
Author(s):  
E. Monroy ◽  
E. Sarigiannidou ◽  
F. Fossard ◽  
N. Gogneau ◽  
E. Bellet-Amalric ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of

Molecular beam measurements and Monte Carlo simulations of the kinetics of N2O decomposition on Rh(111) single-crystal surfaces

2006 ◽  
Vol 125 (7) ◽  
pp. 074705 ◽  
Author(s):  
Rodolfo Omar Uñac ◽  
Victor Bustos ◽  
Jarod Wilson ◽  
Giorgio Zgrablich ◽  
Francisco Zaera
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Single Crystal ◽  
Molecular Beam ◽  
N2o Decomposition ◽  
Crystal Surfaces ◽  
Single Crystal Surfaces ◽  
Kinetics Of

Growth kinetics of AlxGa1–xN grown via ammonia-based metal-organic molecular beam epitaxy

2010 ◽  
Vol 312 (2) ◽  
pp. 209-212 ◽  
Author(s):  
Daniel Billingsley ◽  
Walter Henderson ◽  
David Pritchett ◽  
W. Alan Doolittle
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Metal Organic ◽  
Kinetics Of

scholarly journals Kinetics of Ordering in Cu3Au : An Atomistic Approach

1992 ◽  
Vol 291 ◽  
Author(s):  
Zhigang Xi ◽  
Bulbul Chakraborty
Keyword(s):  
Monte Carlo ◽  
Growth Kinetics ◽  
Structure Factor ◽  
Effective Medium Theory ◽  
Realistic Model ◽  
Medium Theory ◽  
Anisotropic Scaling ◽  
Model Hamiltonian ◽  
Universal Feature ◽  
Kinetics Of

ABSTRACTWe study the kinetics of ordering in Cu3Au using a model Hamiltonian derived from the effective medium theory of chemical bonding. Monte Carlo simulations are used to investigate universal and non-universal features of the growth kinetics. Anisotropic scaling of the structure factor is observed in late-stage growth of ordered domains. The anisotropy is a non-universal feature determined by the details of the microscopic model, and we find that the anisotropy observed in the simulations is in excellent agreement with experiments on Cu3Au. The simulations are discussed in the context of theories of unstable growth. To our knowledge, this is the first study of kinetics in a realistic model Hamiltonian describing the material-specific properties of Cu3Au.

Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy

1999 ◽  
Vol 86 (8) ◽  
pp. 4322-4325 ◽  
Author(s):  
C. Adelmann ◽  
R. Langer ◽  
E. Martinez-Guerrero ◽  
H. Mariette ◽  
G. Feuillet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of
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