A Selective Growth of GaAs Microcrystals Grown on Se-Terminated GaAlAs Surface for the Quantum well Box Structure
Keyword(s):
ABSTRACTA selective growth of GaAs microcrystals was demonstrated on a Se-terminated GaAlAs surface. Ga molecules were supplied to the Se-terminated GaAlAs surface at first. The surface consisted of Ga droplets and bared Se-terminated GaAlAs surface. After the following As molecule supply to the surface, a selective GaAs microcrystal growth from Ga droplets was observed. The cross sectional investigations by the high resolution electron microscope revealed epitaxial growth of GaAs microcrystals with (111) facets and a possibility of (GaAl)2Se3, layer formation at the GaAs/Se-terminated GaAlAs interface.
1991 ◽
Vol 49
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pp. 696-697
1973 ◽
Vol 31
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pp. 486-487
1990 ◽
Vol 48
(1)
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pp. 532-533
1991 ◽
pp. 847-852