Interfacial structure and interfacial reactions at the MgO/Al2O3 interface

1991 ◽  
Vol 49 ◽  
pp. 696-697
Author(s):  
D. X. Li ◽  
P. Pirouz ◽  
A. H. Heuer ◽  
S. Yadavalli ◽  
C. P. Flynn
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Molecular Beam ◽  
Interfacial Structure ◽  
Cross Sectional ◽  
Resolution Electron ◽  
High Resolution Electron Microscope ◽  
Electron Microscope Image ◽  
Image Simulations ◽  
Standard Techniques

MgO films were deposited on the (sample A), (0001)Al2O3 (sample B), and the (sample C) planes of sapphire by Molecular Beam Epitaxy (MBE). Cross-sectional UREM specimens were prepared using standard techniques and examined in a top-entry JEOL 4000FX high resolution electron microscope. Image simulations were performed using the SHRLI programs developed by O'Keefe.

Interfacial Structures in the Nb/MgO/Nb/Al2O3 Superlattice

1991 ◽  
Vol 49 ◽  
pp. 960-961
Author(s):  
D. X. Li ◽  
P. Pirouz ◽  
A. H. Heuer ◽  
S. Yadavalli ◽  
C. P. Flynn
Keyword(s):  
Ion Beam ◽  
Mechanical Grinding ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Resolution Electron ◽  
Interfacial Structures ◽  
High Resolution Electron Microscope ◽  
Point To Point ◽  
Image Simulations ◽  
Standard Techniques

Nb/MgO/Nb/Al2O3 superlattices were prepared by MBE growth of Nb and MgO films on a (012)Al2O3 sapphire substrate. Cross sectional HREM specimens were prepared using standard techniques involving mechanical grinding to a thickness of 0.13 mm, dimpling to a thickness of 20 μm and ion beam milling at 6 kV. The samples were subsequently examined in a top-entry JEOL 4000EX high resolution electron microscope with a point-to-point resolution of ∼0.19 nm. Image simulations were performed using the SHRLI programs developed by O'Keefe.

A HREM study of V/Al2O3 interface

1992 ◽  
Vol 50 (1) ◽  
pp. 146-147
Author(s):  
Y. Ikuhara ◽  
P. Pirouz ◽  
A. H. Heuer ◽  
S. Yadavalli ◽  
C. P. Flynn
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
High Resolution ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Interface Structure ◽  
Cross Sectional ◽  
Plan View ◽  
Resolution Electron

The interface structure between vanadium and the R-plane of sapphire (α-Al2O3) was studied by conventional and cross-sectional high resolution electron microscopy (HREM) to clarify the atomic structure of the interface.A 57 nm thick vanadium film was deposited on the (1102) (R) plane of sapphire by molecular beam epitaxy (MBE) at a substrate temperature of 920 K in a vacuum of 10-10torr. The HREM observations of the interface were done from three directions: two cross-sectional views (parallel to [0221]Al2O3 and [1120]Al2O3) and a plan view (parallel to [2201]Al2O3) by a top-entry JEOL 4000EX electron microscope (400 kV).

A Selective Growth of GaAs Microcrystals Grown on Se-Terminated GaAlAs Surface for the Quantum well Box Structure

1992 ◽  
Vol 283 ◽  
Author(s):  
Toyohiro Chikyow ◽  
Nobuyuki Koguchi
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Quantum Well ◽  
Epitaxial Growth ◽  
Selective Growth ◽  
Layer Formation ◽  
Cross Sectional ◽  
Resolution Electron ◽  
Box Structure ◽  
High Resolution Electron Microscope

ABSTRACTA selective growth of GaAs microcrystals was demonstrated on a Se-terminated GaAlAs surface. Ga molecules were supplied to the Se-terminated GaAlAs surface at first. The surface consisted of Ga droplets and bared Se-terminated GaAlAs surface. After the following As molecule supply to the surface, a selective GaAs microcrystal growth from Ga droplets was observed. The cross sectional investigations by the high resolution electron microscope revealed epitaxial growth of GaAs microcrystals with (111) facets and a possibility of (GaAl)2Se3, layer formation at the GaAs/Se-terminated GaAlAs interface.

HREM of epitaxially grown Fe/TiO2 and Cu/TiO2 interfaces

1993 ◽  
Vol 51 ◽  
pp. 834-835
Author(s):  
P. Lu ◽  
F. Cosandey
Keyword(s):  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Select Area Diffraction ◽  
Ion Milling ◽  
Cross Sectional ◽  
Oxide Interfaces ◽  
Atomic Structures ◽  
Resolution Electron ◽  
High Resolution Electron Microscope ◽  
Standard Techniques

High-resolution electron microscopy (HREM) has been used to provide information on atomic structures of metal/oxide interfaces, which are of both scientific and technological interest. In this report, we present results of a study on Fe/TiO2 and Cu/TiO2 interfaces by HREM. The Fe/TiO2 and Cu/TiO2 interfaces were formed by vapor deposition of Fe and Cu on TiO2 (110) surface, respectively, in a UHV chamber with a base pressure of ∽1x10−10 torr. Cross sectional HREM specimens were prepared using standard techniques involving mechanical polishing, dimpling and ion-milling. The samples were examined in an Topcon-002B high-resolution electron microscope. HREM simulations were performed using the EMS program.Figs, 1a and 1b show a HREM micrograph and a select area diffraction pattern of Fe/TiO2 interface, respectively, taken along the TiO2 [001] direction. From Fig.la and Fig.1b, the following orientation relationship is obtained: [001]Fe//[001]TiO2 and (100)Fe//(110)TiO2. With this orientation, there is about 12.6% lattice misfitt along the TiO2 [10] direction.

Hrem Study On The Interfacial Structure In Oxygen-Defective CaMnO3−x System

1991 ◽  
Vol 238 ◽  
Author(s):  
H. Shibahara ◽  
H. Taguch
Keyword(s):  
Magnetic Properties ◽  
Electron Microscope ◽  
High Resolution ◽  
Interfacial Structure ◽  
Electron Microscope Observation ◽  
Ordered Structure ◽  
Long Period ◽  
Resolution Electron ◽  
The Family ◽  
High Resolution Electron Microscope

ABSTRACTElectron diffraction and high resolution electron microscope observation for CaMnO3−x (x=0. 02 and 0. 05) showed unique features of the ordered structure. A coherent intergrowth of several phases with a long period in CaMnO3−x composed of extended perovekite units was observed. The relation in crystallography in the family of ordered perovskite related oxides in CaMnO3−x, which could help towards an understanding of magnetic properties and catalytic action of CaMnO3−x, is discussed.

Atomistic Calculations and Hrtem Observations of an [001] Tilt Boundary in Rutile

1993 ◽  
Vol 319 ◽  
Author(s):  
W.-Y. Lee ◽  
P.D. Bristowe ◽  
I.G. Solorzano ◽  
J.B. Vandersande
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Atomic Structure ◽  
Tilt Boundary ◽  
Energy Structure ◽  
Image Simulation ◽  
Resolution Electron ◽  
Atomistic Calculations ◽  
High Resolution Electron Microscope ◽  
Electron Microscope Image

AbstractThe equilibrium atomic structure of the ∑=15 36.9° (210)[001] tilt boundary in rutile (TiO2) has been computed using an ionic shell model and compared to a high-resolution electron microscope image of the same boundary using image simulation. The lowest energy structure of the boundary is characterized by an in-plane translation of a/6[120] relative to the mirrorsymmetric CSL configuration in agreement with the electron microscope observations.

High Resolution Study of CoSi2/Si (111) Interfaces

1990 ◽  
Vol 183 ◽  
Author(s):  
A. Catana ◽  
Ping Lu ◽  
David J. Smith
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Cross Section ◽  
Atomic Structure ◽  
Interface Bonding ◽  
Resolution Electron ◽  
High Resolution Electron Microscope ◽  
Image Simulations ◽  
Resolution Study

AbstractThe atomic structure of A- and B-type CoSi2/Si (111) interfaces has been investigated by observations of samples in cross-section using a 400 kV high-resolution electron microscope. The samples were prepared by UHV e–beam evaporation of Co layers followed by annealing at temperatures between 300°C and 500°C. Based upon image simulations for various interface bonding models we have found evidence for 7–fold Co coordination at the A–type CoSi2/Si interfaces and for 7– and 8–fold coordination at the B-type interfaces.

A structure observation of GaAs micro crystal/Se-terminated GaAlAs interface for the quantum well box structure

1993 ◽  
Vol 300 ◽  
Author(s):  
Toyohiro Chikyow ◽  
Michihisa Lijima ◽  
Nobuyuki Koguchi
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Quantum Well ◽  
Epitaxial Growth ◽  
Layer Formation ◽  
Cross Sectional ◽  
Resolution Electron ◽  
Box Structure ◽  
Structure Observation ◽  
High Resolution Electron Microscope

ABSTRACTA selective growth of GaAs micro crystals was demonstrated on a Se-terminated GaAIAs surface by sequential supplies of Ga and As molecules for the quantum well box structure. After the growth, the surface consisted GaAs micro crystals with (111) facets and some Se clusters. The cross sectional investigations by the high resolution electron microscope revealed an epitaxial growth of GaAs micro crystals on the surface and a mixture of Ga2Se3 and A12Se3 layer formation at the interface of GaAs/Se-terminated GaAIAs. The selenidation process seems to be a reaction limited one. The Se cluster segregation could be avoided by selenidation in As molecule atmosphere.

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