“Fast” and “Slow” Metastable Defects in a-Si:H
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A two-step light soaking experiment at high and low intensities provided convincing evidence that defect generation and annealing in a-Si:H are controlled by defect states of different characteristics. We point out that the total defect density by itself cannot uniquely determine the state of material or be described by a single rate equation, even though it might be the only quantity that is experimentally measurable. A system of rate equations for all defect components, therefore, must be established in order to accurately describe the defect kinetics. A simple two-component model in which defects are categorized as “fast” or “slow” is shown to be adequate to explain a variety of experimental results in a consistent fashion.
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1996 ◽
Vol 169
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pp. 713-714
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Keyword(s):
2002 ◽
Vol 33
(3)
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pp. 332-345
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