Structural and Electrical Properties of Thermally Annealed InN Thin Films on Native and Ain-Nucleated (00.1) Sapphire

ABSTRACTThe effects of thermal annealing at 400°C in 5 MTorr of N2 on the structural and electrical properties of thin films of InN grown at 100°C on native and AIN-nucleated (00.1) sapphire by reactive magnetron sputtering have been studied. The variations in the properties of the two sets of films have qualitatively similar, yet quantitatively different dependencies on anneal time. In each case, surface decomposition to give (101) textured rods of elemental indium is seen at short anneal times, and markedly so in the more highly strained films on the AIN-nucleated substrates. The electrical properties in both cases improve with annealing time, yielding a Hall Mobility that is enhanced 2–3 times relative to as-deposited films and similar to that for films grown at a substrate temperature of 400°C. The evolution of the electrical properties appears to be relatively insensitive to the surface decomposition and to largely reflect the nature of the bulk InN Matrix.

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Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

10.1063/1.4917978 ◽

2015 ◽

Author(s):

K. C. Das ◽

S. P. Ghosh ◽

N. Tripathy ◽

G. Bose ◽

T. Lee ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Substrate Temperature ◽

Hafnium Oxide ◽

Oxide Thin Films ◽

Structural And Electrical Properties

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STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

International Journal of Modern Physics Conference Series ◽

10.1142/s2010194513010672 ◽

2013 ◽

Vol 22 ◽

pp. 564-569

Author(s):

KANTA RATHEE ◽

B. P. MALIK

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Electrical Properties ◽

Metal Oxide ◽

High Dielectric Constant ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

High Dielectric ◽

Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

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Effect of substrate temperature on structural and electrical properties of BaZr 0.2 Ti 0.8 O 3 lead-free thin films by pulsed laser deposition

Ceramics International ◽

10.1016/j.ceramint.2016.05.126 ◽

2016 ◽

Vol 42 (11) ◽

pp. 13262-13267 ◽

Cited By ~ 5

Author(s):

Jieling Zhang ◽

Xiushi Huang ◽

Shihui Yu ◽

Weifeng Zhang

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Substrate Temperature ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Lead Free ◽

Structural And Electrical Properties

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Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

Applied Surface Science ◽

10.1016/j.apsusc.2013.01.042 ◽

2013 ◽

Vol 270 ◽

pp. 428-431 ◽

Cited By ~ 13

Author(s):

Junjun Huang ◽

Yuheng Zeng ◽

Ruiqin Tan ◽

Weiyan Wang ◽

Ye Yang ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Substrate Temperature ◽

Silicon Nanocrystal ◽

Sio2 Matrix ◽

Boron Doped ◽

Structural And Electrical Properties ◽

Doped Silicon

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Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

Applied Surface Science ◽

10.1016/j.apsusc.2014.01.155 ◽

2014 ◽

Vol 301 ◽

pp. 28-33 ◽

Cited By ~ 21

Author(s):

Magdalena Szymańska ◽

Sylwia Gierałtowska ◽

Łukasz Wachnicki ◽

Marcin Grobelny ◽

Katarzyna Makowska ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Hafnium Oxide ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Oxide Thin Films ◽

Structural And Electrical Properties

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Preparation and Properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using Flash-MOCVD

MRS Proceedings ◽

10.1557/proc-415-195 ◽

1995 ◽

Vol 415 ◽

Cited By ~ 26

Author(s):

T. Ami ◽

K. Hironaka ◽

C. Isobel ◽

N. Nagel ◽

M. Sugiyama ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Coercive Field ◽

Remanent Polarization ◽

Ferroelectric Properties ◽

Type Structure ◽

Structural And Electrical Properties ◽

Fluorite Type ◽

Deposited Films ◽

Flowing Oxygen

ABSTRACTFerroelectric Bi2 SrTa2 O9 thin films were successfully prepared by liquid delivery MOCVD, and structural and electrical properties were investigated. As-deposited films showed sharp distinct peaks, which were indexed assuming a fluorite-type structure. These precursors were transformed to bismuth-layered structures by annealing at 800 °C in flowing oxygen. Reasonable ferroelectric properties were observed in a film with 170 nm-thickness. Remanent polarization and coercive field were estimated to be 5.2 μC/cm2 and 52 kV/cm, respectively, at 5V.

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