Dependence of the MoSe2 Formation on the Mo Orientation and the Na Concentration for Cu(In,Ga)Se2 Thin-Film Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Daniel Abou-Ras ◽  
Debashis Mukherji ◽  
Gernot Kostorz ◽  
David Brémaud ◽  
Marc Kälin ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Thin Film Solar Cells ◽  
Elastic Recoil ◽  
X Ray Diffraction ◽  
Elastic Recoil Detection Analysis ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Transmission Electron ◽  
Substrate Temperatures

AbstractThe formation of MoSe2 has been studied on polycrystalline Mo layers and on Mo single crystals in dependence of the Mo orientation, the Na concentration, and also as a function of the Se source and the substrate temperatures. The Mo substrates were selenized by evaporation of Se. The samples were analyzed by means of X-ray diffraction, Rutherford backscattering spectrometry, elastic recoil detection analysis, and by conventional and high-resolution transmission electron microscopy. It was found that the crystal structure and orientation of the MoSe2 layer change with increasing substrate temperature. However, the texture of MoSe2 does not depend on the orientation of the Mo substrate. It was also found that the MoSe2 growth is significantly influenced by the Na concentration at substrate temperatures of 450°C and 580°C.

scholarly journals Effects of Embedded Helium on the Microstructure and Mechanical Properties of Erbium Films

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1564 ◽  
Author(s):  
Wenbo Fu ◽  
Huahai Shen ◽  
Liqun Shi ◽  
Xiaosong Zhou ◽  
Xinggui Long
Keyword(s):  
Mechanical Properties ◽  
Elastic Recoil ◽  
X Ray Diffraction ◽  
Elastic Recoil Detection Analysis ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Grain Sizes ◽  
Detection Analysis ◽  
Microstructure And Mechanical Properties ◽  
Transmission Electron

A series of helium (He) charged nanograin-sized erbium (Er) films were deposited by direct current (DC)-magnetron sputtering with different He/Ar mixture gases. The microstructure and mechanical properties of He-charged Er films were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), and nanoindentation. The helium concentrations in Er films, determined by elastic recoil detection analysis (ERDA), ranged from 0 to 49.6%, with the increase in He:Ar flow ratio up to 18:1. The XRD results show that the grain sizes of Er films decreased with and increase in He content. The embedded He atoms induced the formation of spherical nanometer He bubbles, and the diameter of the He bubbles increased with the He content. The hardness and Young’s modulus increased and decreased with the decreasing grain sizes of polycrystalline Er–He films. The mechanisms of mechanical properties with respect to the grain size and He content were discussed based on the Hall–Petch formula and composite spheres model.

Optical, Electrical and Microstructural Properties of Tin Doped Indium Oxide Films made from Sintered Nanoparticles

2001 ◽  
Vol 703 ◽  
Author(s):  
Annette Hultåker ◽  
Anders Hoel ◽  
Claes-Göran Granqvist ◽  
Arie van Doorn ◽  
Michel J. Jongerius ◽  
...  
Keyword(s):  
Indium Oxide ◽  
Elastic Recoil ◽  
X Ray Diffraction ◽  
Elastic Recoil Detection Analysis ◽  
Electrically Conductive ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Conductive Films ◽  
Detection Analysis ◽  
Nanoparticle Dispersions

ABSTRACTThin transparent and electrically conductive films of tin doped indium oxide (ITO) were made by sintering of nanoparticle dispersions. The resistivity decreased to 1–10-2 μcm upon treatment at 800°C, while the luminous transmittance remained high. The property evolution was connected with sintering and densification as studied by Scanning Electron Microscopy, X-ray Diffraction, X-ray Fluorescence and Elastic Recoil Detection Analysis.

Disordering behavior and helium diffusion in He+ irradiated 6H–SiC

2002 ◽  
Vol 17 (2) ◽  
pp. 271-274 ◽  
Author(s):  
W. Jiang ◽  
W. J. Weber ◽  
C. M. Wang ◽  
Y. Zhang
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Elastic Recoil ◽  
Transmission Electron Microscopy Study ◽  
Cross Sectional ◽  
Elastic Recoil Detection ◽  
Ion Channeling ◽  
Detection Analysis ◽  
Transmission Electron

Single-crystal 6H–SiC wafers were irradiated at 300 K with 50 keV He+ ions to fluences ranging from 7.5 to 250 He+/nm2. Ion-channeling experiments with 2.0 MeV He+ Rutherford backscattering spectrometry were performed to determine the depth profile of Si disorder. The measured profiles are consistent with SRIM-97 simulations at and below 45 He+/nm2 but higher than the SRIM-97 prediction at both 100 and 150 He+/nm2. Cross-sectional transmission electron microscopy study indicated that the volume expansion of the material is not significant at intermediate damage levels. Results from elastic recoil detection analysis suggested that the implanted He atoms diffuse in a high-damage regime toward the surface.

Microstructure and He Bubble Effects on Al-Cu Thin Films

2003 ◽  
Vol 792 ◽  
Author(s):  
C.S. Camacho ◽  
P.F.P. Fichtner ◽  
F.C. Zawislak ◽  
G. Feldmann
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Microelectronic Device ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Grain Structures ◽  
Transmission Electron ◽  
Device Reliability ◽  
Improve Device ◽  
Post Implantation

ABSTRACTThe effects of film morphology (mosaic- or bamboo-like grain structures) and of He bubbles on the redistribution of Cu, as well as on the formation of Al-Cu precipitates in 200 nm thick Al/SiO2 films similar to microelectronic device interconnects, are investigated using Rutherford backscattering spectrometry, elastic recoil detection analysis and transmission electron microscopy. As-deposited and pre-annealed Al films were implanted with Cu and/or He ions forming concentration profiles located 100 nm below the surface and with peak concentrations of about 3 at.%. It is shown that grain boundaries and/or He bubbles can affect the vacancy fluxes inside the grains and reduce or even inhibit the Cu redistribution as well as the nucleation and growth of θ and θ′ Al-Cu precipitates during post-implantation annealings at temperatures from 473 to 553 K. It is also shown that mosaic-like grain structures allow the control of grain size distribution within the 25 to 1500 nm size range, thus providing an additional microstructure engineering tool to improve device reliability against electromigration failures.

The determination of the thickness and composition of multilayered thin films in the SEM by x-ray microanalysis with Monte Carlo simulations

1996 ◽  
Vol 54 ◽  
pp. 494-495
Author(s):  
Raynald Gauvin ◽  
Mario Caron ◽  
Pierre Hovington ◽  
Dominique Drouin ◽  
Gilles Gagnon ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Weight Functions ◽  
Generation Process ◽  
Elastic Recoil ◽  
X Ray Diffraction ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Transmission Electron ◽  
Multilayer Metallization

X-Ray microanalysis is now a well established technique to determine the composition and the thickness of multilayer structures of different materials. The most popular software used to quantify such system are based on analytical φ(ρz) curves which are approximation of the x-Ray generation process. The computed φ(ρz) curves of multilayered samples are based on mixtures rules and weight functions which are not always accurate. In this paper, Monte Carlo simulations of electron trajectories in solids are used to compute φ(ρz) curves in multilayered specimens directly and then used to computed the K ratios.To validate this procedure, a TiN(100 nm)/Ti(10 nm) multilayer metallization structure deposited on SiO2(100 nm)/Si substrate was used in conjonction with a TiN(400 nm)/Si standard sample. This system is a very active field of research and development in the microelectronics industry. The thicknesses, composition and microstructure of both systems were fully characterized by Elastic Recoil Detection (ERD), X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM).

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