scholarly journals Transport of Topological Edge States in 2D Zigzag Edge Tungsten Ditelluride Nanoribbon

2021 ◽  
Author(s):  
Joy Sharma ◽  
Nishat Mahzabin Helaly ◽  
Mahbub Alam
Keyword(s):  
Band Structure ◽  
Potential Barrier ◽  
Tight Binding ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Tight Binding Model ◽  
Edge States ◽  
Zigzag Edge ◽  
Binding Model ◽  
Greens Function

Abstract In this paper, we have investigated the transport of topological edge states in 2D Zigzag edge Tungsten Ditelluride Nanoribbon (ZTDNR).We have found that zigzag edge nanoribbon (NR) of Tungsten Ditelluride develops topological edge states in the presence of intrinsic spin orbit interaction (SOC). We have used three band tight binding model for the electrons of dz2 , dxy, and dx2 - y2 orbitals with SOC for calculating band structure of NR and Non Equilibrium Greens Function (NEGF) formalism for transport in the NR. We have investigated transport in a pristine device, transport in the presence of a finite potential barrier, transport with constriction within the device and transport with edge imperfections.

A Tight-Binding Theory of the Electronic Structures for Rhombohedral Semimetals and Sb/GaSb, Sb/AlSb Superlattices

1993 ◽  
Vol 325 ◽  
Author(s):  
J.H. Xu ◽  
E.G. Wang ◽  
C.S. Ting ◽  
W.P. Su
Keyword(s):  
Electronic Structures ◽  
Tight Binding ◽  
Interface State ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Tight Binding Model ◽  
Binding Theory ◽  
Binding Parameters ◽  
Binding Model ◽  
Group V

AbstractThe band structures of three group-V semimetals As, Sb, and Bi with rhombohedral A7 symmetry are studied using a second-neighbor tight-binding model including spin-orbit interaction with an sp3s* basis. Then the bulk tight-binding parameters are used to investigate the electronic properties of semimetal-semiconductor superlattices made of alternating (111) layers of Sb and GaSb or AlSb. It is found that the band gap can be adjustable depending primarily on the thickness of the Sb layers. An interface state is observed in the region of the gap.

scholarly journals Tight-binding Central Interaction Model for the Band Structure of Silicon

1984 ◽  
Vol 37 (4) ◽  
pp. 407
Author(s):  
GP Betteridge
Keyword(s):  
Band Structure ◽  
Tight Binding ◽  
Interaction Model ◽  
Diamond Lattice ◽  
Nearest Neighbour ◽  
Tight Binding Model ◽  
Binding Model ◽  
Central Interaction

We consider a simple tight-binding model involving all interactions between first and second nearest-neighbour (n.n.) bonds in the diamond lattice. We show that the band structure may be solved analytically in the central approximation in which all second n.n. bond interactions of the same type, for example all bonding: bonding or all bonding: antibonding interactions, are considered equal. The k dependence of the solution is given in terms of the corresponding s-band eigenvalues, which are determined by the topology of the structure.

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