Spin–Orbit Interaction in the Tight-Binding Model —Toward the Comprehension of the Rashba Effect at Surfaces—

2014 ◽  
Vol 83 (6) ◽  
pp. 064706 ◽  
Author(s):  
Takashi Mii ◽  
Nobuyuki Shima ◽  
Koichi Kano ◽  
Kenji Makoshi
Keyword(s):  
Tight Binding ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Tight Binding Model ◽  
Rashba Effect ◽  
Binding Model ◽  
Spin Orbit Interaction

A Tight-Binding Theory of the Electronic Structures for Rhombohedral Semimetals and Sb/GaSb, Sb/AlSb Superlattices

1993 ◽  
Vol 325 ◽  
Author(s):  
J.H. Xu ◽  
E.G. Wang ◽  
C.S. Ting ◽  
W.P. Su
Keyword(s):  
Electronic Structures ◽  
Tight Binding ◽  
Interface State ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Tight Binding Model ◽  
Binding Theory ◽  
Binding Parameters ◽  
Binding Model ◽  
Group V

AbstractThe band structures of three group-V semimetals As, Sb, and Bi with rhombohedral A7 symmetry are studied using a second-neighbor tight-binding model including spin-orbit interaction with an sp3s* basis. Then the bulk tight-binding parameters are used to investigate the electronic properties of semimetal-semiconductor superlattices made of alternating (111) layers of Sb and GaSb or AlSb. It is found that the band gap can be adjustable depending primarily on the thickness of the Sb layers. An interface state is observed in the region of the gap.

scholarly journals Transport of Topological Edge States in 2D Zigzag Edge Tungsten Ditelluride Nanoribbon

2021 ◽  
Author(s):  
Joy Sharma ◽  
Nishat Mahzabin Helaly ◽  
Mahbub Alam
Keyword(s):  
Band Structure ◽  
Potential Barrier ◽  
Tight Binding ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Tight Binding Model ◽  
Edge States ◽  
Zigzag Edge ◽  
Binding Model ◽  
Greens Function

Abstract In this paper, we have investigated the transport of topological edge states in 2D Zigzag edge Tungsten Ditelluride Nanoribbon (ZTDNR).We have found that zigzag edge nanoribbon (NR) of Tungsten Ditelluride develops topological edge states in the presence of intrinsic spin orbit interaction (SOC). We have used three band tight binding model for the electrons of dz2 , dxy, and dx2 - y2 orbitals with SOC for calculating band structure of NR and Non Equilibrium Greens Function (NEGF) formalism for transport in the NR. We have investigated transport in a pristine device, transport in the presence of a finite potential barrier, transport with constriction within the device and transport with edge imperfections.

BICHKOV–RASHBA SPIN–ORBIT SPLITTING IN KINETIC BINDING REGIME IN HgCdTe ACCUMULATION LAYERS

2007 ◽  
Vol 06 (03n04) ◽  
pp. 301-304
Author(s):  
V. F. RADANTSEV ◽  
V. V. KRUZHAEV
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Rashba Effect ◽  
Orbit Splitting ◽  
Spin Orbit Interaction ◽  
Rashba Spin ◽  
Spin Orbit Splitting

The Rashba effect peculiarities in gated accumulation layers on the zero-gap HgCdTe are studied theoretically and experimentally. It is shown that the kinetic binding is strongly affected by spin–orbit interaction. Although the spin–orbit splitting is smaller in accumulation layers as compared with inversion ones, the "Rashba polarization", Δn/n, can achieve 100% in the kinetic confinement regime.

HOLE STATES LOCALIZED AT TYPE II HETEROINTERFACE

2003 ◽  
Vol 02 (06) ◽  
pp. 411-417 ◽  
Author(s):  
M. O. NESTOKLON
Keyword(s):  
Tight Binding ◽  
Type Ii ◽  
Spin Orbit ◽  
Tight Binding Model ◽  
Binding Parameters ◽  
Binding Model ◽  
Orbit Splitting ◽  
Semiconductor Interface ◽  
Spin Orbit Splitting ◽  
Tight Binding Method

A theory of Tamm-like hole states at type II heterointerface has been developed for zink-blende semiconductors. The consideration has been carried out in the microscopic tight-binding model with allowance made for the spin-orbit splitting of the valence band. It has been demonstrated that the tight-binding method describes Tamm-like hole states at type II semiconductor interface. Localization energy dependence on interface tight-binding parameters has been analyzed.

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