Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

1994 ◽  
Vol 336 ◽  
Author(s):  
R. Martins ◽  
I. Ferreira ◽  
E. Fortunato ◽  
M. Vieira

ABSTRACTSilicon oxycarbide microcrystalline layers, n- and p-doped, highly conductive and highly transparent have been produced using a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system. The films exhibit suitable properties for optoelectronic applications where wide band gap materials with required conductivity and stability are needed. In this paper we present the role of partial oxygen pressure (po2) in controlling the composition, structure and transport properties (conductivity, σd and optical gap, Eop) of silicon oxycarbide microcrystalline layers.

1994 ◽  
Vol 358 ◽  
Author(s):  
R. Martins ◽  
M. Vieira ◽  
I. Ferreira ◽  
E. Fortunato

ABSTRACTThis work presents experimental data concerning the role of the oxygen partial pressure used during the preparation process, on the structure, composition and optoelectronic properties of wide band gap doped microcrystalline silicon oxycarbide films produced by a TCDDC system [1].


1993 ◽  
Author(s):  
J. T. Dickinson ◽  
L. C. Jensen ◽  
R. L. Webb ◽  
S. C. Langford

2017 ◽  
Vol 5 (29) ◽  
pp. 15031-15037 ◽  
Author(s):  
Jun Zhou ◽  
Zhiguo Xia ◽  
Maxim S. Molokeev ◽  
Xiuwen Zhang ◽  
Dongsheng Peng ◽  
...  

Stable double perovskite Cs2AgInCl6 has been reported as a direct gap semiconductor with a wide band gap of 3.23 eV obtained experimentally and 3.33 eV obtained by DFT calculation.


2015 ◽  
Vol 39 (6) ◽  
pp. 4407-4413 ◽  
Author(s):  
Rui-Xia Wang ◽  
Qing Zhu ◽  
Wan-Sheng Wang ◽  
Cong-Min Fan ◽  
An-Wu Xu

The new role of graphene as a macromolecular photosensitizer transforms the wide band gap BaTiO3 to have visible light photoactivity.


ACS Nano ◽  
2012 ◽  
Vol 6 (11) ◽  
pp. 9777-9789 ◽  
Author(s):  
Yanhui Zhang ◽  
Nan Zhang ◽  
Zi-Rong Tang ◽  
Yi-Jun Xu

Author(s):  
J.T. Dickinson ◽  
S.C. Langford ◽  
L.C. Jensen ◽  
R.L. Webb ◽  
J.-J. Shin

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