The Structure and Composition of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

1994 ◽  
Vol 358 ◽  
Author(s):  
R. Martins ◽  
M. Vieira ◽  
I. Ferreira ◽  
E. Fortunato

ABSTRACTThis work presents experimental data concerning the role of the oxygen partial pressure used during the preparation process, on the structure, composition and optoelectronic properties of wide band gap doped microcrystalline silicon oxycarbide films produced by a TCDDC system [1].

1994 ◽  
Vol 336 ◽  
Author(s):  
R. Martins ◽  
I. Ferreira ◽  
E. Fortunato ◽  
M. Vieira

ABSTRACTSilicon oxycarbide microcrystalline layers, n- and p-doped, highly conductive and highly transparent have been produced using a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system. The films exhibit suitable properties for optoelectronic applications where wide band gap materials with required conductivity and stability are needed. In this paper we present the role of partial oxygen pressure (po2) in controlling the composition, structure and transport properties (conductivity, σd and optical gap, Eop) of silicon oxycarbide microcrystalline layers.


1993 ◽  
Author(s):  
J. T. Dickinson ◽  
L. C. Jensen ◽  
R. L. Webb ◽  
S. C. Langford

2015 ◽  
Vol 39 (6) ◽  
pp. 4407-4413 ◽  
Author(s):  
Rui-Xia Wang ◽  
Qing Zhu ◽  
Wan-Sheng Wang ◽  
Cong-Min Fan ◽  
An-Wu Xu

The new role of graphene as a macromolecular photosensitizer transforms the wide band gap BaTiO3 to have visible light photoactivity.


1996 ◽  
Vol 420 ◽  
Author(s):  
R. Martins ◽  
A. Macarico ◽  
I. Ferreira ◽  
R. Nunes ◽  
A. Bicho ◽  
...  

AbstractWide band gap microcrystalline silicon films have aroused considerable interest since they combine some electro-optical advantages of amorphous and crystalline materials highly important to produce electro-optical devices such as TFTs and solar cells. In this paper we present results concerning the electro-optical characteristics of highly transparent and conductive n-type µc-Si based films. Here, emphasis is given to the production of n-type ýtc-films with optical gaps of 2.3 eV and dark conductivity's of 6.5 Scm-1


ACS Nano ◽  
2012 ◽  
Vol 6 (11) ◽  
pp. 9777-9789 ◽  
Author(s):  
Yanhui Zhang ◽  
Nan Zhang ◽  
Zi-Rong Tang ◽  
Yi-Jun Xu

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