The Structure and Composition of Doped Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques
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ABSTRACTThis work presents experimental data concerning the role of the oxygen partial pressure used during the preparation process, on the structure, composition and optoelectronic properties of wide band gap doped microcrystalline silicon oxycarbide films produced by a TCDDC system [1].
1995 ◽
Vol 13
(4)
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pp. 2199-2209
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The role of deep acceptor centers in the oxidation of acceptor-doped wide-band-gap perovskites ABO 3
2017 ◽
Vol 247
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pp. 147-155
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