Composition design, optical gap and stability investigations of lead-free halide double perovskite Cs2AgInCl6

Stable double perovskite Cs2AgInCl6 has been reported as a direct gap semiconductor with a wide band gap of 3.23 eV obtained experimentally and 3.33 eV obtained by DFT calculation.

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High-Efficiency Lead-Free Wide Band Gap Perovskite Solar Cells via Guanidinium Bromide Incorporation

ACS Applied Energy Materials ◽

10.1021/acsaem.1c00413 ◽

2021 ◽

Author(s):

Mengmeng Chen ◽

Muhammad Akmal Kamarudin ◽

Ajay K. Baranwal ◽

Gaurav Kapil ◽

Teresa S. Ripolles ◽

...

Keyword(s):

Solar Cells ◽

Band Gap ◽

High Efficiency ◽

Perovskite Solar Cells ◽

Wide Band ◽

Lead Free ◽

Wide Band Gap

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Silicon Oxycarbide Microcrystalline Layers Produced by Spatial Separation Techniques

MRS Proceedings ◽

10.1557/proc-336-55 ◽

1994 ◽

Vol 336 ◽

Cited By ~ 1

Author(s):

R. Martins ◽

I. Ferreira ◽

E. Fortunato ◽

M. Vieira

Keyword(s):

Band Gap ◽

Spatial Separation ◽

Wide Band ◽

Silicon Oxycarbide ◽

Wide Band Gap ◽

Deposition Chamber ◽

Optical Gap ◽

Composition Structure ◽

Partial Oxygen

ABSTRACTSilicon oxycarbide microcrystalline layers, n- and p-doped, highly conductive and highly transparent have been produced using a Two Consecutive Decomposition and Deposition Chamber (TCDDC) system. The films exhibit suitable properties for optoelectronic applications where wide band gap materials with required conductivity and stability are needed. In this paper we present the role of partial oxygen pressure (po2) in controlling the composition, structure and transport properties (conductivity, σd and optical gap, Eop) of silicon oxycarbide microcrystalline layers.

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Investigation on the electronic structure, optical, elastic, mechanical, thermodynamic and thermoelectric properties of wide band gap semiconductor double perovskite Ba2InTaO6

RSC Advances ◽

10.1039/c9ra00313d ◽

2019 ◽

Vol 9 (17) ◽

pp. 9522-9532 ◽

Cited By ~ 18

Author(s):

Sajad Ahmad Dar ◽

Ramesh Sharma ◽

Vipul Srivastava ◽

Umesh Kumar Sakalle

Keyword(s):

Density Functional Theory ◽

Electronic Structure ◽

Band Gap ◽

Thermoelectric Properties ◽

Density Functional ◽

Double Perovskite ◽

Wide Band ◽

Wide Band Gap ◽

Functional Theory

In the present paper, double perovskite Ba2InTaO6 was investigated in terms of its structural, electronic, optical, elastic, mechanical, thermodynamic and thermoelectric properties using density-functional theory (DFT).

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Extraordinary magnetic properties of double perovskite Eu2CoMnO6 wide band gap semiconductor

Journal of Physics Condensed Matter ◽

10.1088/1361-648x/ab8ecc ◽

2020 ◽

Vol 32 (36) ◽

pp. 365802

Author(s):

Mohd Alam ◽

Prajyoti Singh ◽

Khyati Anand ◽

Arkadeb Pal ◽

Surajit Ghosh ◽

...

Keyword(s):

Magnetic Properties ◽

Band Gap ◽

Double Perovskite ◽

Wide Band ◽

Wide Band Gap

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TEM and cathodoluminescence of precipitates in II-VI semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104509 ◽

1988 ◽

Vol 46 ◽

pp. 488-489

Author(s):

Joanna L. Batstone

Keyword(s):

Crystal Growth ◽

Band Gap ◽

Local Strain ◽

Wide Band ◽

Optoelectronic Device ◽

Wide Band Gap ◽

Bulk Crystal Growth ◽

Transmission Electron ◽

Device Applications ◽

Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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