a-Si:H/a-SiC:H Heterostructure for Bias-Controlled Photodetectors

1994 ◽  
Vol 336 ◽  
Author(s):  
G. De Cesare ◽  
F. Irrera ◽  
F. Lemmi ◽  
F. Palma ◽  
M. Tucci
Keyword(s):  
Applied Voltage ◽  
Energy Gap ◽  
The Other ◽  
Time Response ◽  
Wavelength Selection ◽  
Load Impedance ◽  
Amorphous Si ◽  
Hydrogenated Amorphous ◽  
High Rejection

ABSTRACTWe present a novel family of photodetectors based on hydrogenated amorphous Si/SiC p-i-n-i-p heterostructures. Front p-i-n and rear n-i-p diodes work one as a detector and the other as a load impedance, depending on the polarity of the applied voltage. Due to different absorption at different wavelengths, the devices operate as bias-controlled light detectors in either the blue or the red regions. The energy gap and the thickness of the two intrinsic layers have been optimized to obtain a sharp wavelength selection (centered at 430 and 630 nm) with high rejection-ratios and good quantum efficiencies. The I-V characteristics and the device time response are investigated and simulated by SPICE.

Optical constants of rf sputtered hydrogenated amorphous Si

1979 ◽  
Vol 20 (2) ◽  
pp. 716-728 ◽  
Author(s):  
Eva C. Freeman ◽  
William Paul
Keyword(s):  
Optical Constants ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

THEORETICAL ANALYSIS AND EXPERIMENT OF A NOVEL DEP CHIP WITH 3-D SILICON ELECTRODES

2005 ◽  
Vol 15 (02) ◽  
pp. 231-236 ◽  
Author(s):  
LIMING YU ◽  
FRANCIS E. H. TAY ◽  
GUOLIN XU ◽  
CIPRIAN ILIESCU ◽  
MARIOARA AVRAM
Keyword(s):  
Theoretical Analysis ◽  
Applied Voltage ◽  
Microfluidic Channel ◽  
The Other ◽  
Yeast Cells ◽  
Applied Potential ◽  
Dielectrophoretic Force ◽  
Joule Effect ◽  
Doped Silicon ◽  
Planar Electrodes

This paper presents a novel dielectrophoresis (DEP) device where the DEP electrodes define the channel walls. This is achieved by fabricating microfluidic channel walls from highly doped silicon so that they can also function as DEP electrodes. Compared with planar electrodes, this device increases the exhibited dielectrophoretic force on the particle, therefore decreases the applied potential and reduces the heating of the solution. A DEP device with triangle electrodes has been designed and fabricated. Compared with the other two configurations, semi-circular and square, triangle electrode presents an increased force, which can decrease the applied voltage and reduce the Joule effect. Yeast cells have been used to for testing the performance of the device.

ESR and Raman Studies on Hydrogenated Amorphous Si-Sn

1984 ◽  
Vol 23 (Part 2, No. 10) ◽  
pp. L812-L814 ◽  
Author(s):  
Akiharu Morimoto ◽  
Toyotaka Kataoka ◽  
Tatsuo Shimizu
Keyword(s):  
Amorphous Si ◽  
Hydrogenated Amorphous

Mechanisms of intrinsic stresses generation in sputtered amorphous Si: H films

1995 ◽  
Vol 10 (11) ◽  
pp. 2736-2741 ◽  
Author(s):  
Hiroki Takahashi ◽  
Hirotoshi Nagata ◽  
Haruki Kataoka ◽  
Hiroshi Takai
Keyword(s):  
Compressive Stress ◽  
Volume Expansion ◽  
Bond Angle ◽  
Film Deposition ◽  
The Other ◽  
Structural Disorders ◽  
First Results ◽  
Amorphous Si ◽  
Deposition Processes ◽  
Deposition Conditions

The relation between stresses of sputtered a-Si: H films and the film deposition conditions are investigated. The film stresses change from a large compressive stress of 1000 MPa to an almost stress-free one. They arise from distortions of the Si network via the following two mechanisms. The first results from the inclusion of the Ar-sputtering gas into the films, which provides volume expansion of the film network. The other is due to structural disorders, such as a deviation of the Si bond angle which is generated during the deposition processes. Moreover, it is found that Si–H terminations in the films contribute to reducing the film stresses because the Si–H termination breaks and relaxes the Si network. These effects can be realized as long as the Si–H terminations are homogeneously distributed in the films.

Interfacial reactions between Au and hydrogenated amorphous Si

1982 ◽  
Vol 21 (2) ◽  
pp. 632-636 ◽  
Author(s):  
C. C. Tsai ◽  
R. J. Nemanich ◽  
M. J. Thompson
Keyword(s):  
Interfacial Reactions ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma

1986 ◽  
Vol 25 (Part 2, No. 1) ◽  
pp. L54-L56 ◽  
Author(s):  
Akihisa Matsuda ◽  
Masato Koyama ◽  
Nozomu Ikuchi ◽  
Yuichiro Imanishi ◽  
Kazunobu Tanaka
Keyword(s):  
Glow Discharge ◽  
Discharge Plasma ◽  
Glow Discharge Plasma ◽  
Guiding Principle ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Influence of hydrogen concentration on void-related microstructure in low hydrogen amorphous and crystalline silicon materials

2014 ◽  
Vol 92 (7/8) ◽  
pp. 700-704 ◽  
Author(s):  
W. Beyer ◽  
U. Breuer ◽  
R. Carius ◽  
W. Hilgers ◽  
D. Lennartz ◽  
...  
Keyword(s):  
Hydrogen Concentration ◽  
Amorphous Materials ◽  
Low Dose ◽  
Concentration Level ◽  
Crystalline Silicon ◽  
High Deposition Temperature ◽  
Diffusion Paths ◽  
Silicon Materials ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

The influence of implanted hydrogen (up to a concentration level of 3 at. %) on the microstructure of silicon (Si) materials is investigated by Fourier transform infrared spectroscopy as well as by effusion of hydrogen and of (low dose) implanted helium. Three materials of low original hydrogen concentration, crystalline Si, electron beam evaporated amorphous Si, and plasma-deposited hydrogenated amorphous Si (using high deposition temperature) were investigated. Significant differences between crystalline and amorphous materials were observed. In crystalline Si, implanted hydrogen is found to generate multivacancies that trap diffusing helium while this is not the case in amorphous Si. Accordingly, cavities where hydrogen is located in amorphous Si must be smaller than divacancies. Those cavities in amorphous Si, present from the growth process, that trap helium tend to disappear when the implanted hydrogen concentration increases. Annealing of the materials up to temperatures of 575 °C was also studied. No significant change in the density of voids (trapping helium) occur but in case of crystalline Si the bonding sites of hydrogen as well as the diffusion paths of helium change.

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