Heterostructural Characterization of Pseudomorphic, Partially Strained, and Highly Mismatched Semiconductors Using Double Crystal X-Ray Diffraction, TEM, and SEM

ABSTRACTHeterostructural properties of pseudomorphic (AlGaAs/GaAs), partially strained (GaInAs/GaAs), and highly strained (GaAs/Si) semiconductor systems have been studied using High Resolution Double-Crystal X-ray Diffraction (DXRD), Transmission Electron Microscopy (TEM), and Scanning Electron Microscopy (SEM). Using the high resolution DXRD with CuKα1 and two-reflection Si (220) monochromator, we obtained (004) symmetric and (115) or (224) asymmetric reflection rocking curves for samples grown by molecular beam epitaxy. With 0.5 μm thick samples, perpendicular and in-plane lattice mismatches were calculated using elastic theory and compared with each other. The different degree of relaxation for these samples was observed and correlated with the lattice mismatch, X-ray layer peak broadening (i.e., full width at half maximum), and SEM surface morphology. For a GaInAs/GaAs sample, the strain relaxation along one of the <110> directions was more than the other direction, that is, the strain relaxation is not isotrophic. Also we observed that the lines were mainly parallel in one direction, i.e., they did not form a cross-hatch pattern. TEM images from both cross-sectional and planar views of the samples will be presented.

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Study of InAs/InAsSb type-II superlattices using high-resolution x-ray diffraction and cross-sectional electron microscopy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2013.06.021 ◽

2013 ◽

Vol 381 ◽

pp. 1-5 ◽

Cited By ~ 9

Author(s):

Xiao-Meng Shen ◽

Hua Li ◽

Shi Liu ◽

David J. Smith ◽

Yong-Hang Zhang

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Type Ii ◽

X Ray Diffraction ◽

Cross Sectional ◽

X Ray ◽

Type Ii Superlattices

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Double‐Crystal X‐Ray Diffraction, Electron Diffraction, and High Resolution Electron Microscopy of Luminescent Porous Silicon

Journal of The Electrochemical Society ◽

10.1149/1.2044247 ◽

1995 ◽

Vol 142 (6) ◽

pp. 2094-2101 ◽

Cited By ~ 14

Author(s):

S. Gardelis ◽

U. Bangert ◽

A. J. Harvey ◽

B. Hamilton

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Porous Silicon ◽

Electron Diffraction ◽

High Resolution Electron Microscopy ◽

X Ray Diffraction ◽

Double Crystal ◽

X Ray ◽

Diffraction Electron ◽

Resolution Electron

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A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100055904 ◽

1982 ◽

Vol 40 ◽

pp. 722-723 ◽

Cited By ~ 1

Author(s):

R. Gronsky

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

High Resolution ◽

Computer Simulations ◽

Structural Characteristics ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

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High‐resolution x‐ray diffraction and transmission electron microscopy studies of InGaAs/InP superlattices grown by gas‐source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.97393 ◽

1986 ◽

Vol 49 (19) ◽

pp. 1302-1304 ◽

Cited By ~ 40

Author(s):

J. M. Vandenberg ◽

S. N. G. Chu ◽

R. A. Hamm ◽

M. B. Panish ◽

H. Temkin

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

High Resolution ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

X Ray Diffraction ◽

X Ray ◽

Gas Source ◽

Transmission Electron

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BaZr0.85Me0.15O2.925 (Me=Y, In and Ga): crystal growth, high-resolution transmission electron microscopy, high-temperature X-ray diffraction and neutron scattering experiments

Solid State Ionics ◽

10.1016/s0167-2738(01)00927-4 ◽

2001 ◽

Vol 145 (1-4) ◽

pp. 325-331 ◽

Cited By ~ 25

Author(s):

B Groß ◽

Ch Beck ◽

F Meyer ◽

Th Krajewski ◽

R Hempelmann ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Crystal Growth ◽

High Temperature ◽

High Resolution ◽

Neutron Scattering ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron

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Accurate Lattice Constant and Mismatch Measurements of SiC Heterostructures by X-Ray Multiple-Order Reflections

MRS Proceedings ◽

10.1557/proc-742-k3.8 ◽

2002 ◽

Vol 742 ◽

Author(s):

XianRong Huang ◽

Michael Dudley ◽

Philip G. Neudeck ◽

J. Anthony Powell

Keyword(s):

Lattice Mismatch ◽

Strain Relaxation ◽

Relaxation Mechanism ◽

X Ray Diffraction ◽

Crystalline Perfection ◽

Coherent Interface ◽

Rocking Curve ◽

X Ray ◽

Lattice Planes ◽

Atomically Flat

ABSTRACTHigh-resolution X-ray diffraction (HRXRD) combined with other diffraction techniques is applied to characterize 3C SiC epilayers hoteroepitaxially grown on atomically flat mesas on 4H and 6H SiC substrates. Small-beam rocking curve scan and reciprocal mapping show extremely high crystalline perfection and homogeneity of the ideally grown 3C-SiC epilayers. Accurate lattice measurements based on X-ray multiple-order reflections reveal that: 1) no misorientation between the (0001) lattice planes across the 4H/3C or 6H/3C interface is detected, confirming the 2D nucleation mechanism of the 3C epilayer from a flat coherent interface; 2) in-plane substrate/epilayer lattice mismatch always exists, but the 3C epilayers do not correspond to a completely relaxed cubic structure, indicating that the epilayers are partially strained; 3) lattice mismatch varies for different regions, implying a complicated strain relaxation mechanism of 3C epilayers on various mesas.

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