Structural Characterization of InAlAs/InGaAs Layers Grown on InP Patterned Substrates
Keyword(s):
ABSTRACTIn this work we present structural characterization by both Scanning and Transmission Electron Microscopy of InAlAs/InGaAs heterostructures grown on InP substrates. Our attention is devoted to study the two main problems limiting the application of these structures as devices: the presence of defects on the epilayer and the growth habit at theedges of the well. Our results show that a different faceting between the two <110> orthogonal directions develops during the growth and that a high density of defects is observed just at the intersection between the layers grown inside the windows and on the walls. Moreover, the presence of a polycrystalline layer developing over the mask indicates that a selective growth occurs.
2005 ◽
Vol 61
(1)
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pp. 11-16
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2008 ◽
Vol 600-603
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pp. 67-70
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2016 ◽
Vol 505
(1-2)
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pp. 167-174
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