Fabrication of Biaxially Oriented YBCO on (00l) Biaxially Oriented Yttria-Stabilized-Zirconia on Polycrystalline Substrates

1994 ◽  
Vol 341 ◽  
Author(s):  
Paul Arendt ◽  
Steve Foltyn ◽  
Xin Di Wu ◽  
John Townsend ◽  
Chris Adams ◽  
...  
Keyword(s):  
Ybco Film ◽  
Ion Beam ◽  
Density Measurement ◽  
Barium Copper Oxide ◽  
Yttria Stabilized Zirconia ◽  
Transport Critical Current Density ◽  
Stabilized Zirconia ◽  
Barium Copper ◽  
Yttrium Barium ◽  
Ion Beam Sputter Deposition

AbstractIon-assisted, ion-beam sputter deposition is used to obtain (00l) biaxially oriented films of cubic yttria-stabilized-zirconia (YSZ) on polycrystalline metal substrates. Yttrium-barium-copper-oxide (YBCO) is then heteroepitaxially-pulse-laser deposited onto the YSZ. Phi scans of the films show the full-width-half maxima of the YSZ (202) and the YBCO (103) reflections to be 14° and 10° respectively. Our best dc transport critical current density measurement for the YBCO is 800,000 A/cm2 at 75K and 0T. At 75K, the total dc transport current in a 1 cm wide YBCO film is 23 A.

Polarization behavior of yttrium barium copper oxide electrodes on yttria-stabilized zirconia electrolytes

1994 ◽  
Vol 29 (11) ◽  
pp. 1175-1182 ◽  
Author(s):  
J.G. Fletcher ◽  
J.T.S. Irvine ◽  
A.R. West ◽  
J.A. Labrincha ◽  
J.R. Frade ◽  
...  
Keyword(s):  
Yttrium Barium Copper Oxide ◽  
Copper Oxide ◽  
Barium Copper Oxide ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Polarization Behavior ◽  
Oxide Electrodes ◽  
Barium Copper ◽  
Yttrium Barium

Ibad Diffusion Barriers Between YBaCuO and Si

1989 ◽  
Vol 169 ◽  
Author(s):  
Anton Greenwald ◽  
James Hirvonen ◽  
Narendra Jaggi ◽  
John Allen
Keyword(s):  
Indium Tin Oxide ◽  
Elevated Temperatures ◽  
Ion Beam ◽  
Barium Copper Oxide ◽  
Diffusion Barriers ◽  
Ion Beam Assisted Deposition ◽  
Barium Copper ◽  
Atmospheric Exposure ◽  
Yttrium Barium ◽  
Tin Oxide Films

AbstractDifferent materials were investigated for use as diffusion barriers between silicon and yttrium barium copper oxide (YBCO). Ion beam assisted deposition (IBAD) of 300nm zirconia films at room temperature prevented interdiffusion at sintering temperatures over 800°C. Similar MgO and indium-tin oxide films did not prevent degradation at elevated temperatures. All films deposited on top of YBCO reduced the effects of extended atmospheric exposure.

Epitaxial growth of yttria‐stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter deposition

1988 ◽  
Vol 53 (16) ◽  
pp. 1506-1508 ◽  
Author(s):  
P. Legagneux ◽  
G. Garry ◽  
D. Dieumegard ◽  
C. Schwebel ◽  
C. Pellet ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Sputter Deposition ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Ion Beam Sputter Deposition ◽  
Zirconia Films

Aligned gadolinium barium copper oxide thick films formed by in situ crystallization in a magnetic field

1993 ◽  
Vol 8 (10) ◽  
pp. 2440-2444 ◽  
Author(s):  
Joanna McKittrick ◽  
Ramiro Contreras ◽  
Dennis Clougherty
Keyword(s):  
Magnetic Field ◽  
Copper Oxide ◽  
Applied Magnetic Field ◽  
Barium Copper Oxide ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Barium Copper ◽  
Axis Alignment ◽  
In Situ Crystallization

Gd-1:2:3 films were synthesized from acetate precursors and spun-on to polycrystalline substrates of yttria-stabilized zirconia. The substrates were fired in air at 500 °C in between each applied coat. After applying 10–30 coats, they were crystallized by heating to 900 °C in Ar or O2 with or without the application of a 1 T magnetic field. The applied magnetic field was found to produce c-axis alignment for films <4 μm. Annealing in argon produced alignment, but the effect was less pronounced than annealing in oxygen. Substrates with films > 20 μm were not aligned for either environment.

Pulsed Microwave Processing of High-TC Superconducting Films

1992 ◽  
Vol 269 ◽  
Author(s):  
R. B. James ◽  
R. A. Alvarez ◽  
A. K. Stamper ◽  
X. J. Bao ◽  
T. E. Schlesinger ◽  
...  
Keyword(s):  
Phase Transition ◽  
Barium Copper Oxide ◽  
Precursor Film ◽  
Silicon Substrates ◽  
Molten Layer ◽  
Time Resolved ◽  
Barium Copper ◽  
In Situ Experiments ◽  
Yttrium Barium

ABSTRACTWe have used 2.0-μsec microwave pulses at a frequency of 2.856 GHz to rapidly heat thin amorphous yttrium-barium-copper-oxide (YBCO) films deposited onto silicon substrates. The samples were irradiated inside a WR-284 waveguide by single-pass TE10 pulses in a traveling wave geometry. X-ray diffractometry studies show that an amorphous-to-crystalline phase transition occurs for incident pulse powers exceeding about 6 MW, in which case the amorphous YBCO layer is converted to Y2BaCuO5. Microscopy of the irradiated film reveals that the phase transition is brought about by melting of the YBCO precursor film and crystallization of the molten layer upon solidification. Time-resolved in situ experiments of the microwave reflectivity (R) and transmissivity (T) show that there is an abrupt change in R for microwave pulse powers exceeding the melt threshold, so that measurements of R and T can be used to monitor the onset of surface melting.

scholarly journals Flux Penetration Effects in High-Tc SQUIDs

1989 ◽  
Vol 42 (4) ◽  
pp. 401
Author(s):  
GJ SIoggett ◽  
lK Harvey ◽  
L Wieczorek ◽  
RE Binks ◽  
R Driver
Keyword(s):  
Magnetic Field ◽  
Copper Oxide ◽  
Direct Measurement ◽  
Barium Copper Oxide ◽  
Break Junction ◽  
Flux Penetration ◽  
High Tc ◽  
Bulk Ybco ◽  
Barium Copper ◽  
Yttrium Barium

Two experiments pertaining to the effects of intergranular flux penetration in high-Tc yttrium-barium-copper oxide (YBCO) SQUIDs are described. The first is a direct measurement of the flux noise of bulk YBCO exposed to the earth's magnetic field, and the second involves the fabrication and testing of break junction d.c. SQUIDs. Implications of a number of undesirable effects seen in these experiments are discussed.

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